Stress studies in EFG

Abstract

Experimental work in support of stress studies in high speed silicon sheet growth has been emphasized in this quarter. Creep experiments utilizing four-point bending have been made in the temperature range from 1000 C to 1360 C in CZ silicon as well as on EFG ribbon. A method to measure residual stress over large areas using laser interferometry to map strain distributions under load is under development. A fiber optics sensor to measure ribbon temperature profiles has been constructed and is being tested in a ribbon growth furnace environment. Stress and temperature field modeling work has been directed toward improving various aspects of the finite element computing schemes. Difficulties in computing stress distributions with a very high creep intensity and with non-zero interface stress have been encountered and additional development of the numerical schemes to cope with these problems is required. Temperature field modeling has been extended to include the study of heat transfer effects in the die and meniscus regions.