Stress studies in EFG

Abstract

A program to study stress generation mechanisms in silicon sheet growth was started. The purpose of the research is to define post-growth temperature profiles for the sheet that can minimize its stress during growth at high speeds, e.g., greater than 3 cm/min. The initial tasks described concern work in progress toward the development of computing capabilities to (1) model stress-temperature relationships in steady-state ribbon growth, and (2) provide a means to calculate realistic temperature fields in ribbon, given growth system component temperatures as boundary conditions. If it is determined that low stress configurations can be achieved, the modeling is to be tested experimentally by constructing low-stress growth systems for EFG silicon ribbon.