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NASA NTRS · 19820015797

Wafering insight provided by the ODE method

Abstract

The orientation-dependent etching method of slicing was investigated to see if it could be used to form more slices from high quality silicon crystals than can be achieved by mechanical slicing methods. Orientation-dependent slicing uses preferential etching down narrow slots in a silicon slab on form slices. The method has several possible advantages including high slicing yield (sq m/kg), plane parallel, thin slices, ready for processing and the chance of high throughput and low costs. There are limitations in the need for simple crystals, and in restricted depth of slicing.

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BibTeXRIS

Soclof, S. I., Iles, P. A.. 1982-02-01. Wafering insight provided by the ODE method. https://ntrs.nasa.gov/citations/19820015797

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