NASA NTRS · 19800000434
CADAT field-effect-transistor simulator
Abstract
CADAT field-effect transistor simulator (FETSIM) analyzes dc and transient behavior of metal-oxide-semiconductor (MOS) circuits. Both N-MOS and P-MOS transistor configurations in either bulk of silicon-on-sapphire (SOS) technology and almost any combination of R/C elements are analyzed.
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1981-01-01. CADAT field-effect-transistor simulator. https://ntrs.nasa.gov/citations/19800000434
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