NASA NTRS · 19800000028
JANTX2N3811 dual transistor
Abstract
Report evaluates effects of power and temperature overstress on Motorola and National Semiconductor devices. National Semiconductor devices exceeded 50 percent failure after 160 hours at 225 deg C. Motorola suffered more rejects but failures occurred at 300 deg C. Difference in lead bonding technique may explain performance.
Keep this discovery
Explore connections, maps & timelines
1980-08-01. JANTX2N3811 dual transistor. https://ntrs.nasa.gov/citations/19800000028
Cite the original work for its findings. Save a collection to share your selection of sources.