NASA NTRS · 19800000023
JANTX2N2605 transistor
Abstract
Report evaluates effects of power and temperature overstress on Raytheon and National Semiconductor devices. Breakdown voltage hysteresis, possibly due to contamination of semiconductor by gold from leads, was prominent.
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1980-08-01. JANTX2N2605 transistor. https://ntrs.nasa.gov/citations/19800000023
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