NASA NTRS · 19800000018
JANTX2N2060 dual transistor
Abstract
Report describes effects of power and temperature overstress on Motorola and Raytheon devices. Motorola devices were weak in power overstress. Raytheon devices succumbed to 160 hour temperature stress. Failure modes are detailed.
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1980-08-01. JANTX2N2060 dual transistor. https://ntrs.nasa.gov/citations/19800000018
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