On the sputtering of binary compounds

Abstract

A simple physical model is presented to describe some aspects of the sputtering of compound targets. In particular, expressions are developed for the partial sputtering yields for binary systems in terms of the elemental sputtering rates, the stoichiometric concentrations, and surface binding energy. The partial yields depend nonlinearly on the bulk target concentrations. Comparison of the theoretical predictions with the data on sputtering of PtSi, NiSi, and Cu3Au indicates that the general features are well described.