NASA NTRS · 19750037601
Time dependent breakdown in silicon dioxide films
Abstract
An investigation was conducted regarding the possible existence of a time-dependent breakdown mechanism in thermal oxides of the type used as gate oxide in MOS circuits. Questions of device fabrication are discussed along with details concerning breakdown measurements and the determination of C-V characteristics. A relatively large prebreakdown current observed in one of the cases is related to the time-dependent breakdown.
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Svensson, C., Shumka, A.. 1975-01-01. Time dependent breakdown in silicon dioxide films. https://ntrs.nasa.gov/citations/19750037601
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