NASA NTRS ยท 19730008011
Solid state image sensing arrays
Abstract
The fabrication of a photodiode transistor image sensor array in silicon, and tests on individual elements of the array are described along with design for a scanning system for an image sensor array. The spectral response of p-n junctions was used as a technique for studying the optical-absorption edge in silicon. Heterojunction structures of Sb2S3- Si were fabricated and a system for measuring C-V curves on MOS structures was built.
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Sadasiv, G.. 1972-12-01. Solid state image sensing arrays. https://ntrs.nasa.gov/citations/19730008011
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