NASA NTRS · 19690000607
Modification to improve self-isolating transistor arrays
Abstract
Fabrication process improves the size ratio and shape factor of the base region of self-isolating transistor arrays. Basic processing steps in the modified method include, sub-diffusion, epitaxial layer growth, isolation-diffusions, enhancement diffusions, aluminum interconnect deposition, and testing and packaging.
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Farnsworth, D. L.. 1969-12-01. Modification to improve self-isolating transistor arrays. https://ntrs.nasa.gov/citations/19690000607
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