Skip to content

Home/Archive/NASA NTRS

NASA NTRS · 19670042565

Electron mobility measurements in SiC polytypes.

Barrett, D. L.·Campbell, R. B.

View original source ↗Export metadata ↓

Abstract

Electron mobility measurements in n-type SiC polytypes noting temperature dependence

Explore related subjects

N-TYPE SEMICONDUCTOR SILICON CARBIDE ELECTRON MOBILITY TEMPERATURE EFFECT

Keep this discovery

Explore connections, maps & timelines

Barrett, D. L., Campbell, R. B.. 1967-01-01. Electron mobility measurements in SiC polytypes.. https://ntrs.nasa.gov/citations/19670042565

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related reports

NASA NTRS1967

Quantum oscillations in HgTe.

Quantum oscillation of magnetoresistivity in n-type mercury telluride crystals, obtaining electron mass

N-TYPE SEMICONDUCTOR↗

NASA NTRS1966

Defect-impurity relationships in electron- damaged silicon.

Defect impurity relation in electron damaged p-type silicon and electron irradiation effect on float zone n-type silicon

N-TYPE SEMICONDUCTOR↗

NASA NTRS1965

Solar-radiation-induced damage to optical properties of ZnO-type pigments Technical summary report, 24 Jun. 1964 - 27 Jun. 1965

Solar radiation induced damage to optical property of zinc oxide semiconducting pigment coating

N-TYPE SEMICONDUCTOR↗