Skip to content

Home/Archive/NASA NTRS

NASA NTRS · 19660008185

Diffusion process modeling Technical summary report, Feb. - Aug. 1965

View original source ↗Export metadata ↓

Abstract

Diffusion process modeling to improve silicon integrated device reliability

Explore related subjects

SILICON DIFFUSION SEMICONDUCTOR DEVICE RELIABILITY

Keep this discovery

Explore connections, maps & timelines

Donovan, R. P.. 1965-08-01. Diffusion process modeling Technical summary report, Feb. - Aug. 1965. https://ntrs.nasa.gov/citations/19660008185

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related reports

NASA NTRS1967

Research on the mechanism and kinetics of oxidation of silicon in air Semiannual report, 1 Dec. 1966 - 31 May 1967

Mechanism and kinetics of silicon oxidation in air-instrumentation for ellipsometry and use in determining refractive index and thickness of thin oxide films on silicon

SILICON↗

NASA NTRS1967

The development of solar cells.

Silicon solar cells impurities, radiation resistance, fabrication, nonsilicon materials, development, etc

SILICON↗

NASA NTRS1967

The effects of sub-threshold electron irradiation on surface recombination in Ge and Si.

Subthreshold electron irradiation effects on surface recombination properties of n- and p-type germanium and silicon crystals

SILICON↗