NASA NTRS · 19660000615
Improved memory word line configuration allows high storage density
Abstract
Plated wire memory word drive line allows high storage density, good plated wire transmission and a simplified memory plane configuration. A half-turn word drive line with a magnetic keeper is used. The ground plane provides the return path for both the word current and the plated wire transmission line.
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1966-12-01. Improved memory word line configuration allows high storage density. https://ntrs.nasa.gov/citations/19660000615
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