@misc{indiciae2657206d0ca7,
  title = {Mechanically and electrically tunable Rashba-Edelstein effect in ferroelectric semiconductors, CsGe⁢𝑋 3 (𝑋 = I, Br, Cl)},
  author = {Popoola, Abduljelili [University of South Florida, Tampa, FL (United States)] (ORCID:0000000167994992) and Kashikar, Ravi [Institute of Infrastructure, Technology, Research and Management (IITRAM), Gujarat (India)] and Azmy, Ali [University of South Florida, Tampa, FL (United States)] (ORCID:0009000618892926) and Spanopoulos, Ioannis [University of South Florida, Tampa, FL (United States)] (ORCID:0000000308611407) and Jafari, Homayoun [University of Groningen (Netherlands)] and Sławińska, Jagoda [University of Groningen (Netherlands)] (ORCID:0000000314461812) and Witanachchi, Sarath [University of South Florida, Tampa, FL (United States)] (ORCID:0000000229345833) and Lisenkov, Sergey [University of South Florida, Tampa, FL (United States)] (ORCID:0000000344890028) and Ponomareva, Inna [University of South Florida, Tampa, FL (United States)] (ORCID:0000000189374401)},
  year = {2025},
  doi = {10.1103/gkt2-x7mm},
  url = {https://www.osti.gov/biblio/3363120},
  note = {Source identifier: 3363120}
}