@misc{indiciae8dfef18a0364,
  title = {ALD-Derived WO 3– x Leads to Nearly Wake-Up-Free Ferroelectric Hf 0.5 Zr 0.5 O 2 at Elevated Temperatures},
  author = {Afroze, Nashrah [Georgia Institute of Technology, Atlanta, GA (United States)] (ORCID:000900057048413X) and Choi, Jihoon [Ulsan National Institute of Science and Technology (UNIST), Ulsan (Korea, Republic of)] and Soliman, Salma [Georgia Institute of Technology, Atlanta, GA (United States)] and Kim, Chang Hoon [Ulsan National Institute of Science and Technology (UNIST), Ulsan (Korea, Republic of)] and Chen, Jiayi [Georgia Institute of Technology, Atlanta, GA (United States)] and Kuo, Yu-Hsin [Georgia Institute of Technology, Atlanta, GA (United States)] and Tian, Mengkun [Georgia Institute of Technology, Atlanta, GA (United States)] (ORCID:0000000327907799) and Zhang, Chengyang [Georgia Institute of Technology, Atlanta, GA (United States)] (ORCID:0009000063031080) and Gundlapudi Ravikumar, Priyankka [Georgia Institute of Technology, Atlanta, GA (United States)] and Datta, Suman [Georgia Institute of Technology, Atlanta, GA (United States)] and Padovani, Andrea [Univ. of Modena and Reggio Emilia (Italy)] (ORCID:0000000311455257) and Lee, Jun Hee [Ulsan National Institute of Science and Technology (UNIST), Ulsan (Korea, Republic of)] (ORCID:000000015121244X) and Khan, Asif [Georgia Institute of Technology, Atlanta, GA (United States)]},
  year = {2026},
  doi = {10.1021/acsaelm.5c02359},
  url = {https://www.osti.gov/biblio/3020766},
  note = {Source identifier: 3020766}
}