@misc{indiciaec7f3df60354f,
  title = {Amorphization and siliconization of silicon carbide as a first wall material},
  author = {De, Aritra [Oak Ridge Associated Universities (ORAU), Oak Ridge, TN (United States)] (ORCID:0000000178828068) and Guterl, Jerome [General Atomics, San Diego, CA (United States)] (ORCID:0000000210493094) and Bergstrom, Zachary [General Atomics, San Diego, CA (United States)] (ORCID:000000025463790X) and Abrams, Tyler [General Atomics, San Diego, CA (United States)] (ORCID:0000000296056871) and Sinclair, Gregory [General Atomics, San Diego, CA (United States)] (ORCID:000000034195177X) and Elder, John David [University of Toronto, ON (Canada)] (ORCID:0000000333505841) and Rudakov, Dmitry [University of California, La Jolla, San Diego, CA (United States)] (ORCID:0000000252664269)},
  year = {2025},
  doi = {10.1088/1741-4326/ada8bd},
  url = {https://www.osti.gov/biblio/2505070},
  note = {Source identifier: 2505070}
}