@misc{indiciaea12c2bf4d642,
  title = {Insulator‐to‐Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors},
  author = {Acharya, Gokul [University of Arkansas, Fayetteville, AR (United States)] (ORCID:0009000683734529) and Neupane, Bimal [University of North Texas, Denton TX (United States)] and Hsu, Chia‐Hsiu [Nanyang Technological University (Singapore); Okinawa Institute of Science and Technology (OIST) (Japan)] and Yang, Xian P. [Princeton University, NJ (United States)] and Graf, David [National High Magnetic Field Lab, Tallahassee, FL (United States)] and Choi, Eun Sang [National High Magnetic Field Lab, Tallahassee, FL (United States)] and Pandey, Krishna [University of Arkansas, Fayetteville, AR (United States)] and Nabi, Md Un [University of Arkansas, Fayetteville, AR (United States)] and Chhetri, Santosh Karki [University of Arkansas, Fayetteville, AR (United States)] and Basnet, Rabindra [University of Arkansas, Fayetteville, AR (United States)] and Rahman, Sumaya [University of Arkansas, Fayetteville, AR (United States)] and Wang, Jian [Wichita State University, KS (United States)] and Hu, Zhengxin [National Institute for Materials Science (NIMS), Tsukuba (Japan); University of Cambridge (United Kingdom)] and Da, Bo [National Institute for Materials Science (NIMS), Tsukuba (Japan)] and Churchill, Hugh H. [University of Arkansas, Fayetteville, AR (United States)] and Chang, Guoqing [Nanyang Technological University (Singapore)] and Hasan, M. Zahid [Princeton University, NJ (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)] and Wang, Yuanxi [University of North Texas, Denton, TX (United States)] and Hu, Jin [University of Arkansas, Fayetteville, AR (United States)]},
  year = {2024},
  doi = {10.1002/adma.202410655},
  url = {https://www.osti.gov/biblio/2466262},
  note = {Source identifier: 2466262}
}