Final Technical Report
This project investigated the fundamental science of nanowire epitaxy using vapor-liquid-solid growth in the silicon-germanium material system. Ultrahigh vacuum chemical vapor deposition (UHV CVD) was the primary deposition method. Nanowires grown using UHV CVD were characterized ex situ using scanning electron microscopy and a variety of transmission electron microscopy techniques. In situ transmission electron microscopy was also employed to monitor growth in real time and was instrumental in elucidating growth mechanisms.
36 MATERIALS SCIENCE↗