Life Testing of Segmented High Efficiency Thermoelectric Couples
No abstract available
Thermoelectric properties↗
Engineering topics
Zoltan, Leslie D.
Publications and source records attributed to Zoltan, Leslie D..
Apparatus Measures Seebeck Coefficient And Resistivity
Electrical measurements made by four point probes, two of which double as temperature probes. Laboratory apparatus measures both Seebeck coefficients and electrical resistivities of candidate thermoelectric materials at temperatures from ambient to 1,300 K. Apparatus makes possible to take both measurements alternately and in rapid succession during same heating cycle, thereby reducing distortion.
Zoltan, Leslie D.↗
Electrical Conductivity Of Diamond Up To 1,200 Degrees C
Report discusses measurements of electrical conductivities of two synthetic diamond films, three synthetic diamondlike films, and two natural type IIa diamonds at temperatures from ambient to 1,200 degrees C. Measurements performed to compare electrical conductivities of state-of-the-art diamond films with those of natural insulating diamond, particularly at temperatures above 700 degrees C.
Vandersande, Jan W.↗
Automated High-Temperature Hall-Effect Apparatus
Automated apparatus takes Hall-effect measurements of specimens of thermoelectric materials at temperatures from ambient to 1,200 K using computer control to obtain better resolution of data and more data points about three times as fast as before. Four-probe electrical-resistance measurements taken in 12 electrical and 2 magnetic orientations to characterize specimens at each temperature. Computer acquires data, and controls apparatus via three feedback loops: one for temperature, one for magnetic field, and one for electrical-potential data.
Parker, James B.↗
A promising new thermoelectric material - Ruthenium silicide
Experimental and theoretical efforts directed toward increasing thermoelectric figure of merit values by a factor of 2 or 3 have been encouraging in several respects. An accurate and detailed theoretical model developed for n-type silicon-germanium (SiGe) indicates that ZT values several times higher than currently available are expected under certain conditions. These new, high ZT materials are expected to be significantly different from SiGe, but not unreasonably so. Several promising candidate materials have been identified which may meet the conditions required by theory. One such candidate, ruthenium silicide, currently under development at JPL, has been estimated to have the potential to exhibit figure of merit values 4 times higher than conventional SiGe materials. Recent results are summarized.
Vining, Cronin B.↗