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Zoltan, D.

Publications and source records attributed to Zoltan, D..

10 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

A New High Efficiency Segmented Thermoelectric Unicouple

To achieve high thermal-to-electric energy conversion efficiency, it is desirable to operate thermoelectric generator devices over large temperature gradients and also to maximize the thermoelectric performance of the materials used to build the devices. However, no single thermoelectric material is suitable for use over a very wide range of temperatures (approx. 300 - 1000 K). It is therefore necessary to use different materials in each temperature range where they possess optimum performance. This can be achieved in two ways: 1) multistage thermoelectric generators where each stage operates over a fixed temperature difference and is electrically insulated but thermally in contact with the other stages and 2) segmented generators where the p- and n-legs are formed of different segments joined in series. The concept of integrating new thermoelectric materials developed at the Jet Propulsion Laboratory (JPL) into a segmented thermoelectric generator has been presented in detail in earlier publications . This new generator is expected to operate over a 300-973 K temperature difference and will use novel segmented legs based on a combination of state-of-the-art thermoelectric materials and novel p-type Zn4Sb3, p-type CeFe4Sb12-based alloys and n-type CoSb3-based alloys. An increase in the conversion efficiency of about 60% is expected compared to conventional Bi2Te3- and PbTe-based generators. We present in this paper the latest experimental results from the bonding studies between the different segments of the p-legs, n-legs, and p-leg to n-leg interconnect. Evaluation of the bond quality was done by measuring the contact resistance across the joints as well as by detailed microstructure investigations to reveal any potential interdiffusion. Among the materials investigated as inter-layers between the different segments of the legs, Pd-Ag joining alloys have been found to provide mechanically stable and low electrical resistance bonds.

Caillat, T.↗
NASA NTRS1999

A New High Efficiency Segmented Thermoelectric Unicouple

To achieve high thermal-to-electric energy conversion efficiency, it is desirable to operate thermoelectric geneteor devices over large temperature gradients and also to maximize the thermoelectric performance of the materials used to build the devices.

Energy↗
NASA NTRS1988

Measurement of Seebeck coefficient using a large thermal gradient

The integral method of measuring the Seebeck voltage, V(T), has been applied to short rod-shaped samples. In the present method, one end of the sample is held at a fixed temperature and the other end is automatically varied through a temperature T range of interest, up to a maximum temperature of 1000 C. The Seebeck coefficient is then obtained from the slope of the V(T) vs T curve. The method offers simplicity of sample handling and minimal operator involvement.

Wood, C.↗
NASA NTRS1985

Thermoelectric properties of lanthanum sulfide

The Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect have been studied in gamma-phase La(3-x)S4(LaS/y/) for compositions with x in the range from 0.04 to 0.3 (y in the range from 1.35 to 1.48) in order to ascertain its suitability for high-temperature (300 to 1400 K) thermoelectric energy conversion. In this temperature and composition range the material behaves as an extrinsic semiconductor whose degenerate carrier concentration is controlled by the stoichiometric ratio of La to S. A maximum figure-of-merit (Z) of approximately 0.0005 per K at a composition x = 0.3, y = 1.48 (LaS/1.48/) was obtained.

Wood, C.↗
NASA NTRS1985

Measurement of Seebeck coefficient using a light pulse

A high-temperature (1900 K) Seebeck coefficient apparatus is described in which small thermal gradients are generated in a sample by light pulses transmitted via light pipes. By employing an analog subtraction circuit, the Seebeck coefficient is displayed directly on an X-Y recorder. This technique presents a convenient, accurate, and rapid method for measuring the Seebeck coefficient in highly doped semiconductors as a function of temperature. The nature of the resulting display (X-Y recording) is a valuable tool in determining validity of the data. A straight line results (i.e., a minimum of hysteresis) only if all potential experimental errors are minimized. Under these conditions, the error of measurements of the Seebeck coefficient is estimated to be less than + or - 1 percent.

Wood, C.↗