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Zhu, Dandan

Publications and source records attributed to Zhu, Dandan.

7 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

The role of ZmWRKY4 in regulating maize antioxidant defense under cadmium stress

WRKY transcription factors act as positive regulators in abiotic stress responses by activation of the cellular antioxidant systems. However, there are few reports on the response of WRKY genes to cadmium (Cd) stress. In this study, the role of maize ZmWRKY4 in regulating antioxidant enzymes in Cd stress was investigated. The results indicated that Cd induced up-regulation of the expression and the activities of ZmWRKY4 and superoxide dismutase (SOD) and ascorbate peroxidase (APX). Transient expression and RNA interference (RNAi) silencing of ZmWRKY4 in maize mesophyll protoplasts further revealed that ZmWRKY4 was required for the abscisic acid (ABA)-induced increase in expression and activity of SOD and APX. Overexpression of ZmWRKY4 in protoplasts upregulated the expression and the activities of antioxidant enzymes, whereas ABA induced increases in the expression and the activities of antioxidant enzymes were blocked by the RNAi silencing of ZmWRKY4. Bioinformatic analysis indicated that ZmSOD4 and ZmcAPX both harbored two W-boxes, binding motif for WRKY transcription factors, in their promoter region. Intriguingly, ZmWRKY4 belongs to group I WRKYs with two WRKY domains. Moreover, the synchronized expression patterns indicate that ZmWRKY4 might play a critical role in either regulating the ZmSOD4 and ZmcAPX expression or cooperating with them in response to stress and phytohormone. - Highlights: • Cd induced the expression of ZmWRKY4, ZmSOD4 and ZmcAPX. • Maize transcription factor ZmWRKY4 was localized in nucleus. • Overexpression of ZmWRKY4 upregulated the expression of ZmSOD4 and ZmcAPX and the activities of antioxidant enzymes.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2016

Comparative study of the cooling energy performance of variable refrigerant flow systems and variable air volume systems in office buildings

Variable air volume (VAV) and variable refrigerant flow (VRF) systems are widely used in office buildings. This study investigated VAV and VRF systems in five typical office buildings in China, and compared their cooling energy use. Site survey and field measurements were conducted to collect the data of building characteristics and operation. Measured cooling electricity use was collected from sub-metering in the five buildings. The sub-metering data normalized by climate and operating hours indicated that the cooling energy consumed by VRF systems was up to 70% lower than that consumed by VAV systems. This was mainly because of the different operation modes of both system types that led to significantly fewer operating hours for the VRF systems. Building simulations were used to quantify the impact of operation modes of VRF and VAV systems on cooling loads. A prototype office building in China was used as the model. The simulation results showed that the VRF operation mode required much lower cooling load when compared to the VAV operation mode. For example, the cooling loads decreased by 42% in Hong Kong and 53% in Qingdao. Key findings include the following: the VRF systems operated in the part-time-part-space mode enabling occupants to turn on the air-conditioning only when needed and when the spaces were occupied. However, the VAV systems operated in the full-time-full-space mode limiting occupants’ control of operation. These findings provide insights into VRF systems operation and controls as well as their energy performance, which could help guide HVAC designers on system selection and building operators or facility managers on system operations to achieve low- or zero-net energy buildings.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2015

Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of storage at 900 °C in N{sub 2} atmosphere, the samples exhibit: (i) an increase in the efficiency of GaN and quantum-well luminescence, well correlated to an increase in carrier lifetime; (ii) a decrease in the parasitic luminescence peaks related to Mg acceptors, which is correlated to the reduction in the concentration of Mg in the p-type region, detected by Secondary Ion Mass Spectroscopy (SIMS); (iii) a diffusion of acceptor (Mg) atoms to the quantum well region; (iv) a reduction in the yield of Rutherford Backscattering Spectrometry (RBS)-channeling measurements, possibly due to a partial re-arrangement of the dislocations, which is supposed to be correlated to the increase in radiative efficiency (see (i))

36 MATERIALS SCIENCE↗
DOE OSTI2014

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10{sup −30} cm{sup 6}/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary attempt at uncertainty quantification confirms, beyond the present case, the need for an improved description of carrier transport and microscopic radiative and nonradiative recombination mechanisms in device-level LED numerical models.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Dislocation-related trap levels in nitride-based light emitting diodes

Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10{sup 9} cm{sup −2} and a low dislocation density of 3 × 10{sup 8} cm{sup −2}. Three trapping levels for electrons were revealed, named A, A1, and B, with energies E{sub A} ≈ 0.04 eV, E{sub A1} ≈ 0.13 eV, and E{sub B} ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗