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Zhou, Zhimin

Publications and source records attributed to Zhou, Zhimin.

Spectroscopic search for optical emission lines from dark matter decay

We search for narrow-line optical emission from dark matter decay by stacking dark-sky spectra from the Dark Energy Spectroscopic Instrument (DESI) at the redshift of nearby galaxies from DESI’s Bright Galaxy and Luminous Red Galaxy samples. Our search uses regions separated by 5 to 20 arcsec from the centers of the galaxies, corresponding to an impact parameter of approximately 50 kpc. No unidentified spectral line shows up in the search, and we place a line flux limit of 10 −19 ergs/s/cm 2 /arcsec 2 on emissions in the wavelength range of 2000–9000⁢ Å. This places the tightest constraints yet on the two-photon decay of dark matter in the mass range of 5 to 12 eV, with a particle lifetime exceeding 3 × 10 25 s. Furthermore, this detection limit also implies that the line surface brightness contributed from all dark matter along the line of sight is at least 2 orders of magnitude lower than the measured extragalactic background light (EBL), ruling out the possibility that narrow optical-line emission from dark matter decay is a major source of the EBL.

79 ASTRONOMY AND ASTROPHYSICS

Integrated sensor with frame memory and programmable resolution for light adaptive imaging

An image sensor operable to vary the output spatial resolution according to a received light level while maintaining a desired signal-to-noise ratio. Signals from neighboring pixels in a pixel patch with an adjustable size are added to increase both the image brightness and signal-to-noise ratio. One embodiment comprises a sensor array for receiving input signals, a frame memory array for temporarily storing a full frame, and an array of self-calibration column integrators for uniform column-parallel signal summation. The column integrators are capable of substantially canceling fixed pattern noise.

Zhou, Zhimin

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Fossum, Eric R.

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Fossum, Eric R.

Charge integration successive approximation analog-to-digital converter for focal plane applications using a single amplifier

An analog-to-digital converter for on-chip focal-plane image sensor applications. The analog-to-digital converter utilizes a single charge integrating amplifier in a charge balancing architecture to implement successive approximation analog-to-digital conversion. This design requires minimal chip area and has high speed and low power dissipation for operation in the 2-10 bit range. The invention is particularly well suited to CMOS on-chip applications requiring many analog-to-digital converters, such as column-parallel focal-plane architectures.

Zhou, Zhimin

Recent Progress in On-Focal-Plane ADC

Two 8 bit successive approximation analog-to-digital converters (ADC) and a 12 bit current mode incremental sigma delta ADC have been designed, fabricated, and tested.

analog-to-digital converters adc

Progress in Voltage and Current Mode On-Chip Analog-to-Digital converters for CMOS Image Sensors

Two 8 bit successive approximation analog-to-digital converter (ADC) designs and a 12 bit current mode incremental sigma delta ADC have been designed, fabricated, and tested. The successive approximation test chip designs are compatible with active pixel sensor (APS) column parallel architectures with a 20.4 ??itch in a 1.2 ??-well CMOS process and a 40 ??itch in a 2 ??-well CMOS process. The successive approximation designs consume as little as 49 ??t a 500 KHz conversion rate meeting the low power requirements inherent in column parallel architectures. The current mode incremental sigma-delta ADC test chips designed to be multiplied among 8 columns in a semi-column parallel current mode APS architecture. The higher accuracy ADC consumes 800 ??t a 5 KHz.

analog-to-digital