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Zhang, Shuai

Publications and source records attributed to Zhang, Shuai.

Melting and transport properties of Al 2⁢ O 3 at extreme conditions

The high-pressure, temperature phase diagram and transport properties of materials are of broad interest to planetary sciences and high-energy-density sciences and applications. Alumina (Al 2 O 3 ) or its various forms (e.g., solutions with other oxides or silicates) are important constituents in Earth’s and super-Earths’ mantles, common window materials in dynamic compression experiments, and standard pressure calibrators in diamond-anvil-cell experiments. Its structures and transport properties are of particular importance but have not been well studied at above 100 GPa pressures. Based on extensive first-principles molecular dynamics calculations, we obtain atomic level insights on structural differences and accurate results on electrical conductivity (σ dc ), thermal conductivity (κ), and reflectivity of Al 2 O 3 in several phases at pressures of ~130–1300 GPa and temperatures of 4000–20,000 K. We find the solid-to-liquid state changes of Al 2 O 3 are accompanied by an insulator-to-semimetal transition with enhanced σ dc and κ, which is similar to other silicates and oxides and can facilitate magnetic field generation in deep interiors of rocky planets. We also find the solid-to-solid transition (from Rh 2 O 3 (II) to CaIrO 3 ) is accompanied by negligible changes in σ dc and κ at 160 GPa, contrary to previous expectations, whereas another higher pressure phase transition (CaIrO 3 to U 2 S 3 at 450 GPa) is associated with increases in σ dc and κ. Furthermore, we show the transport properties can be enhanced by oxygen vacancy in Al 2 O 3 , but are not significantly affected by forming solutions with MgSiO 3 , particularly when in the solid states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND

Electronic interactions in Dirac fluids visualized by nano-terahertz spacetime interference of electron-photon quasiparticles

Ultraclean graphene at charge neutrality hosts a quantum critical Dirac fluid of interacting electrons and holes. Interactions profoundly affect the charge dynamics of graphene, which is encoded in the properties of its electron-photon collective modes: surface plasmon polaritons (SPPs). Here, we show that polaritonic interference patterns are particularly well suited to unveil the interactions in Dirac fluids by tracking polaritonic interference in time at temporal scales commensurate with the electronic scattering. Spacetime SPP interference patterns recorded in terahertz (THz) frequency range provided unobstructed readouts of the group velocity and lifetime of polariton that can be directly mapped onto the electronic spectral weight and the relaxation rate. Our data uncovered prominent departures of the electron dynamics from the predictions of the conventional Fermi-liquid theory. The deviations are particularly strong when the densities of electrons and holes are approximately equal. The proposed spacetime imaging methodology can be broadly applied to probe the electrodynamics of quantum materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND

Two-dimensional silk

Despite the promise of silk-based devices, the inherent disorder of native silk limits performance. Here, we report highly ordered two-dimensional silk fibroin (SF) films grown epitaxially on van der Waals (vdW) substrates. Using atomic force microscopy, nano–Fourier transform infrared spectroscopy, and molecular dynamics, we show that the films consist of lamellae of SF molecules that exhibit the same secondary structure as the nanocrystallites of native silk. Increasing the SF concentration results in multilayers that grow either by direct assembly of SF molecules into the lamellae or, at high concentrations, along a two-step pathway beginning with a disordered monolayer that then crystallizes. Scanning Kelvin probe measurements show that these films substantially alter the surface potential; thus, they provide a platform for silk-based electronics on vdW solids.

36 MATERIALS SCIENCE

Crystallization and assembly at interfaces: Celebrating the achievements of a vibrant research community

Crystallization is one of the cornerstones of modern materials science and engineering and plays a critical role in industries ranging from petroleum derivative manufacturing to microstructural engineering of structural materials and the defect-free growth of silicon single crystals for integrated chip technology. Also, in the realm of environmental and biological processes, the mineralization of diverse compounds has shaped the vast array of ecosystems we observe today. Conversely, understanding the crystallization and assembly of building blocks of various sizes at interfaces has broader impacts on materials synthesis, performance of energy storage devices, optimized processing conditions, and more.

36 MATERIALS SCIENCE