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Zhang, S. X.

Publications and source records attributed to Zhang, S. X..

5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Oxygen Vacancy-Induced Room Temperature Ferromagnetism in Rutile TiO{sub 2}

As oxygen vacancies play an important role in ferromagnetism of rutile TiO{sub 2}, a method of γ-ray irradiates rutile TiO{sub 2} single crystals was subtly proposed to study the effect of oxygen vacancies on magnetic properties. Remarkably, room temperature ferromagnetism was observed in γ-ray irradiated rutile TiO{sub 2} single crystals, and the saturation magnetization is the strongest when dose is 4 × 10{sup 4} Gy which assigned to ESR results. Since the displacement threshold energy of Ti atom is much bigger than that of O atom, the defects produced by γ-irradiation are mainly oxygen vacancies. After irradiation, XPS, PL spectra indicate the presence of oxygen vacancies(V{sub O}), Ti{sup 3+}, and V{sub O}-Ti{sup 3+} composite defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Stoichiometry control and electronic and transport properties of pyrochlore B i 2 I r 2 O 7 thin films

Synthesizing stoichiometric and epitaxial thin films of pyrochlore iridates is an essential step toward the experimental realization of unusual topological and magnetic states that are theoretically predicted in this unique spin-orbit coupled material system. Here, we report on the stoichiometry control and electronic and transport properties of pyrochlore iridate Bi 2 Ir 2 O 7 thin films grown by pulsed laser deposition. The as-grown films form a bilayerlike structure, in which the top surface is highly Ir deficient while the bottom layer is mainly composed of iridium metal. By postannealing the as-deposited films in Ir O 2 + O 2 atmosphere, we improved the stoichiometry and homogeneity through the film thickness with the lattice constant close to the bulk value. Density functional theory calculation in the bulk limit shows a fourfold degenerate Dirac node slightly below the Fermi energy at the X point, along with trivial bands around the Γ point. The projected partial density of states suggests that the states in the vicinity of the Fermi energy (–3 to 0 eV) mainly consist of highly hybridized Ir 5d and O 2p with minor contributions from Bi 6s and 6p,while those far below the Fermi energy (–9 to –3 eV) are contributed primarily by the O bands. Transport measurements revealed a weakly metallic behavior at higher temperatures transitioning to a weakly insulating behavior below 150 K, and a low-temperature magnetoresistance qualitatively ascribed to multicarrier and band-structural effects. Here, the transport features are influenced by a density of states sharply peaked at the Fermi energy, and by the coexistence of trivial bands with the Dirac node, as revealed by the density functional theory calculations.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Epitaxial thin films of pyrochlore iridate Bi 2+x Ir 2-y O 7-δ : structure, defects and transport properties

While pyrochlore iridate thin films are theoretically predicted to possess a variety of emergent topological properties, experimental verification of these predictions can be obstructed by the challenge in thin film growth. We report on the pulsed laser deposition and characterization of thin films of a representative pyrochlore compound Bi 2 Ir 2 O 7 . Moreover, the films were epitaxially grown on yttria-stabilized zirconia substrates and have lattice constants that are a few percent larger than that of the bulk single crystals. The film composition shows a strong dependence on the oxygen partial pressure. Density-functional-theory calculations indicate the existence of BiIr antisite defects, qualitatively consistent with the high Bi: Ir ratio found in the films. Both Ir and Bi have oxidation states that are lower than their nominal values, suggesting the existence of oxygen deficiency. The iridate thin films show a variety of intriguing transport characteristics, including multiple charge carriers, logarithmic dependence of resistance on temperature, antilocalization corrections to conductance due to spin-orbit interactions, and linear positive magnetoresistance.

36 MATERIALS SCIENCE↗
NASA NTRS1988

Using a simulation assistant in modeling manufacturing systems

Numerous simulation languages exist for modeling discrete event processes, and are now ported to microcomputers. Graphic and animation capabilities were added to many of these languages to assist the users build models and evaluate the simulation results. With all these languages and added features, the user is still plagued with learning the simulation language. Futhermore, the time to construct and then to validate the simulation model is always greater than originally anticipated. One approach to minimize the time requirement is to use pre-defined macros that describe various common processes or operations in a system. The development of a simulation assistant for modeling discrete event manufacturing processes is presented. A simulation assistant is defined as an interactive intelligent software tool that assists the modeler in writing a simulation program by translating the modeler's symbolic description of the problem and then automatically generating the corresponding simulation code. The simulation assistant is discussed with emphasis on an overview of the simulation assistant, the elements of the assistant, and the five manufacturing simulation generators. A typical manufacturing system will be modeled using the simulation assistant and the advantages and disadvantages discussed.

Schroer, Bernard J.↗