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Zhang, Kunyan

Publications and source records attributed to Zhang, Kunyan.

Achieving High-Yield Conversion of Janus Transition Metal Dichalcogenides on Diverse Substrates

Janus transition metal dichalcogenides (TMDCs) with intrinsic broken mirror symmetry and vertical dipole moment provide an additional degree of freedom to manipulate material symmetry down to atomic-layer thickness. However, despite advances in synthesis strategies, fundamental understanding of this atomic substitution process remains limited, which has impeded their implementation in advanced devices. Here, by using a room-temperature atomic-layer substitution (RT-ALS) strategy, we systematically investigate the critical factors facilitating the high-yield conversion of Janus TMDCs on diverse substrates. Combining Raman spectroscopy probes, X-ray photoelectron spectroscopy (XPS) measurements, and density functional theory (DFT) calculations, we demonstrate that substrates with enhanced electron doping or larger surface polarity substantially benefit the conversion of Janus TMDCs reaching a near-unity yield. Intriguingly, the strong affinity between Janus TMDCs and substrates (e.g., Au) brings about abnormal Raman spectroscopic phenomena. These findings highlight the significance of substrates in achieving the reliable synthesis of Janus two-dimensional materials with improved homogeneity on various substrates. In addition, this takes us one step closer to utilizing Janus TMDCs as a versatile platform in next-generation optoelectronic devices, sensors, and quantum technologies.

Doping↗

Step engineering for nucleation and domain orientation control in WSe 2 epitaxy on c -plane sapphire

In this study, epitaxial growth of two-dimensional transition metal dichalcogenides on sapphire has emerged as a promising route to wafer-scale single-crystal films. Steps on the sapphire act as sites for transition metal dichalcogenide nucleation and can impart a preferred domain orientation, resulting in a substantial reduction in mirror twins. Here we demonstrate control of both the nucleation site and unidirectional growth direction of WSe 2 on c-plane sapphire by metal–organic chemical vapour deposition. The unidirectional orientation is found to be intimately tied to growth conditions via changes in the sapphire surface chemistry that control the step edge location of WSe 2 nucleation, imparting either a 0° or 60° orientation relative to the underlying sapphire lattice. The results provide insight into the role of surface chemistry on transition metal dichalcogenide nucleation and domain alignment and demonstrate the ability to engineer domain orientation over wafer-scale substrates.

36 MATERIALS SCIENCE↗

Designing artificial two-dimensional landscapes via atomic-layer substitution

Significance Manipulating materials with atomic-scale precision is essential for the development of a next-generation material design toolbox. Tremendous efforts have been made to advance the compositional, structural, and spatial accuracy of material deposition and patterning. Here, we presented a new reaction pathway to implement the conversions of two-dimensional materials within the atomic-layer thickness at room temperature for electrical dipole manipulation. Not only could various Janus monolayer transition metal dichalcogenides with vertical dipole be realized, but also some heterostructures, including the dipole-nondipole heterostructures (MoS 2 -MoSSe) and multiheterostructures (MoS 2 -MoSSe-MoSeS-MoSe 2 ) within the same monolayer host structure are developed, in which the dipoles can be selectively patterned to be zero (MoS 2 , MoSe 2 ), positive (MoSSe), and negative (MoSeS).

Guo, Yunfan↗

Anisotropic Fano resonance in the Weyl semimetal candidate LaAlSi

Topological Weyl semimetal (WSM) is a solid-state realization of chiral Weyl fermions, whose phonon behaviors provide in-depth knowledge of their electronic properties. In this work, anisotropic Fano resonance is observed in a type-II WSM candidate LaAlSi by polarized Raman spectroscopy. The asymmetric line shape occurs for the $B^2_1$ phonon mode of LaAlSi only for 488- and 532-nm laser excitations but not for 364-, 633-, and 785-nm excitations, suggesting the excitation selectivity. The asymmetry, frequency, and linewidth of the $B^2_1$ phonon mode, along with the spectral background, all show fourfold rotational symmetry as a function of the polarization angle in the polarized Raman spectra. While the shift of Raman frequency in a metal or semimetal is typically attributed to Kohn anomaly, here we show that the anisotropic frequency shift in LaAlSi cannot be explained by the effect of Kohn anomaly, but potentially by the anisotropic scattering background of Fano resonance. Origins of the excitation-energy dependence and anisotropic behavior of the Fano resonance are discussed by the first-principles calculated electronic band structure and phonon dispersion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhancement of van der Waals Interlayer Coupling through Polar Janus MoSSe

Interlayer coupling plays essential roles in the quantum transport, polaritonic, and electrochemical properties of stacked van der Waals (vdW) materials. In this work, we report the unconventional interlayer coupling in vdW heterostructures (HSs) by utilizing an emerging 2D material, Janus transition metal dichalcogenides (TMDs). In contrast to conventional TMDs, monolayer Janus TMDs have two different chalcogen layers sandwiching the transition metal and thus exhibit broken mirror symmetry and an intrinsic vertical dipole moment. Such a broken symmetry is found to strongly enhance the vdW interlayer coupling by as much as 13.2% when forming MoSSe/MoS 2 HS as compared to the pristine MoS 2 counterparts. Our noncontact ultralow-frequency Raman probe, linear chain model, and density functional theory calculations confirm the enhancement and reveal the origins as charge redistribution in Janus MoSSe and reduced interlayer distance. Furthermore, our results uncover the potential of tuning interlayer coupling strength through Janus heterostacking.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Chirality-Dependent Second Harmonic Generation of MoS 2 Nanoscroll with Enhanced Efficiency

Materials with high second harmonic generation (SHG) efficiency and reduced dimensions are favorable for integrated photonics and nonlinear optical applications. Here, we fabricate MoS 2 nanoscrolls with different chiralities and study their SHG performances. As a 1D material, MoS 2 nanoscroll shows reduced symmetry and strong chirality dependency in the polarization-resolved SHG characterizations. This SHG performance can be well explained by the superposition theory of second harmonic field of the nanoscroll walls. MoS 2 nanoscrolls with certain chiralities and diameters in our experiment can have SHG intensity up to 95 times stronger than that of monolayer MoS 2 , and the full potential can still be further exploited. The same chirality-dependent SHG can be expected for nanoscrolls or nanotubes composed of other noncentrosymmetric 2D materials, such as WS 2 , WSe 2 , and hBN. Here, the characterization and analysis results presented here can also be exploited as a nondestructive technique to determine the chiralities of these nanoscrolls and nanotubes.

42 ENGINEERING↗