Zeller, M. V. | Engineering Papers

NASA NTRS1990

High frequency capacitance-voltage characteristics of thermally grown SiO2 films on beta-SiC

Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures were measured in a frequency range of 10 kHz to 1 MHz. From these measurements, the interface trap density and the effective fixed oxide charge density were observed to be generally lower for off-axis samples.

Tang, S. M.↗

NASA NTRS1986

Surface modification strategies for (100)3C-SiC

Several surface modificaation techniques were performed in situ in an ultrahigh vacuum as part of a program to develop electrical contacts on the (100) face of cubic SiC. The Auger electron spectroscopy line shapes and peak-to-peak heights of the Si LVV and CKLL transitions indicated changes in surface stoichiometry, bonding, and short range order. Changes in the low-energy electron diffraction pattern identified changes in the symmetry of long range ordering on the surface. Heating above 1050 C depleted the surface of Si with an activation energy of 120 kcal/mol, resulting eventually in a disordered graphitic layer which was several atomic layers thick. Bombardment by Ar ions of energies greater than 1000 eV enhanced the Si to C ratio on the surface and destroyed the LEED pattern. Long range order was recovered by simultaneous heating and ion bombardment. Finally, adsorption of Cr on the Ar ion damaged surface and subsequent desorption left a reconstructed, p(2 x 1)Si enriched surface. Similar treatments with Al did not produce a surface reconstruction.

Bellina, J. J., Jr.↗