Engineering topics

Zarkadoula, Eva

Publications and source records attributed to Zarkadoula, Eva.

25 records · Page 2

DOE OSTI2021

Near-surface modification of defective KTaO 3 by ionizing ion irradiation

The synergistic effect of nuclear (S n ) and electronic (S e ) energy loss observed in some ABO 3 perovskites has attracted considerable attention due to the real possibility to modify various near-surface properties, such as the electronic and optical properties, by patterning ion tracks in the defective near-surface regions. In this study, we show that low-energy ion-induced disordering in conjunction with ionizing ion irradiation (18 MeV Si, 21 MeV Ni and 91.6 MeV Xe) is a promising approach for tailoring ion tracks in the near-surface of defective KTaO 3 . Experimental characterization and computer simulations reveal that the size of these latent ion tracks increases with S e and level of pre-existing damage. These results further reveal that the threshold S e value (S e th ) for track creation increases with decreasing pre-damage level. The values of S e th increase from 5.02 keV nm -1 , for a pre-existing fractional disorder of 0.53 in KTaO 3 , to 10.81 keV nm -1 for pristine KTaO 3 . Above these thresholds, amorphous latent tracks are produced due local melting and rapid quenching. Below a disorder fraction of 0.08 and S e ≤ 6.68 keV nm -1 , the synergistic effect is not active, and damage accumulation is suppressed due to a competing ionization-induced damage annealing process. These results indicate that, depending on S e and the amount of pre-existing damage, highly ionizing ions can either enhance or suppress damage accumulation in KTaO 3 , thus providing a pathway to tailoring defects states. Comprehending the conflicting roles of highly ionizing ions in defective ABO 3 oxides is vital for understanding and predictive modeling of ion-solid interactions in complex oxides, as well as for achieving control over ion track size in the near-surface of defective KTaO 3 .

36 MATERIALS SCIENCE↗

DOE OSTI2021

Structural damage response of lanthanum and yttrium aluminate crystals to nuclear collisions and electronic excitation: Threshold assessment of irradiation damage

A comparative analysis is performed on the structural damage response and associated mechanisms in lanthanum aluminate and yttrium aluminate crystals under various irradiation conditions by a combination of experimental and theoretical approaches. Under low-energy Au+ irradiation, the damage accumulation curve shows a higher damage rate for LaAlO 3 crystals than YAlO 3 crystals. The relatively low irradiation tolerance of LaAlO 3 to the action of nuclear collisions is ascribed to the large amorphization cross-section and effective cross-section for defect-stimulated amorphization. Under swift Ar 12+ , Ni 19+ and Kr 17+ irradiation with different ion energies and velocities, the formed highly-disordered/amorphous latent tracks with different morphologies in pristine and predamaged crystals are discussed, and the corresponding electronic energy loss and lattice temperature thresholds are quantitatively determined. Compared to YAlO 3 , LaAlO 3 exhibits lower sensitivity and higher damage tolerance to the electronic energy loss process, attributing to its relatively high recrystallization efficiency during the rapid quenching process. Furthermore, the introduction of lattice defects into LaAlO 3 and YAlO 3 crystals considerably enhances the sensitivity and intensity of thermal spike response to the electronic energy loss, and the induced effective modification of track morphologies demonstrates the synergistic effect between the electronic energy loss and pre-existing defects created by nuclear collisions. In this case, even under the action of electronic energy loss below the threshold, the lattice temperature in the nuclear-collision damaged crystalline system could still meet the criterion for track production. The irradiation energy deposited to atoms and induced lattice temperature evolution discussed in this work provide a deeper insight into the complex processes involved in irradiation-induced latent track behaviors.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Effects of recoil spectra and electronic energy dissipation on defect survival in 3C-SiC

The coincidence of electronic and damage energy dissipation from energetic ions to an atomic lattice can significantly affect damage production along the ion trajectory due to spatial overlap of inelastic and elastic processes. Damage production and disordering in single crystal 3C-SiC from 5 MeV Si and 10 MeV Au ions is investigated using ion-channeling experiments. While defects are created by damage energy dissipation via elastic scattering, electronic energy dissipation via electron-phonon coupling decreases defect survival along the ion trajectory for Si ions. Finally, the more energetic recoil spectrum for 10 MeV Au ions leads to weaker spatial coupling of electronic and damage energy dissipation processes, and damage production is only weakly affected.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Predicting phase behavior in high entropy and chemically complex alloys

The interest in high entropy alloys and other metallic compounds with four or more elements at near-equiatomic ratios has drawn attention to the ability to rapidly predict phase behavior of these complex materials, particularly where existing thermodynamic data are lacking. In this paper, we discuss aspects of this from the point of view of predicting without utilizing (or fitting) experimental data. Of particular interest are heuristic approaches that provide prediction of single-phase compositions, more rigorous approaches that tackle the thermodynamics from a more fundamental point of view, and simulation approaches that provide further insight into the behaviors. This paper covers cases of all three of these, in order to examine the strengths and weaknesses of each approach, and to indicate directions where these may be utilized and improved upon. Of particular interest is moving beyond “which composition may form a solid solution,” to recognizing the importance of underlying thermodynamic realities that affect the temperature- and composition-dependent transformations of these materials.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Latent Tracks in Ion-Irradiated LiTaO 3 Crystals: Damage Morphology Characterization and Thermal Spike Analysis

Systematic research on the response of crystal materials to the deposition of irradiation energy to electrons and atomic nuclei has attracted considerable attention since it is fundamental to understanding the behavior of various materials in natural and manmade radiation environments. This work examines and compares track formation in LiTaO3 induced by separate and combined effects of electronic excitation and nuclear collision. Under 0.71–6.17 MeV/u ion irradiation with electronic energy loss ranging from 6.0 to 13.8 keV/nm, the track damage morphologies evolve from discontinuous to continuous cylindrical zone. Based on the irradiation energy deposited via electronic energy loss, the subsequently induced energy exchange and temperature evolution processes in electron and lattice subsystems are calculated through the inelastic thermal spike model, demonstrating the formation of track damage and relevant thresholds of lattice energy and temperature. Combined with a disorder accumulation model, the damage accumulation in LiTaO3 produced by nuclear energy loss is also experimentally determined. The damage characterizations and inelastic thermal spike calculations further demonstrate that compared to damage-free LiTaO3, nuclear-collision-damaged LiTaO3 presents a more intense thermal spike response to electronic energy loss owing to the decrease in thermal conductivity and increase in electron–phonon coupling, which further enhance track damage.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Coupled effects of electronic and nuclear energy deposition on damage accumulation in ion-irradiated SiC

Coupling between electronic and nuclear energy dissipation in ion-irradiated, single crystal 4H-SiC has been investigated using Si, Ti, and Ni ions over a range of energies at 300 K, and irradiation damage accumulation is characterized using Rutherford backscattering spectroscopy in channeling geometry. The damage production rate from nuclear energy loss (S n ) is observed to decrease with increasing electronic energy loss (S e ) of the incident ions. A dynamic threshold (S e,th ) in electronic energy loss is determined for each ion species, which defines two regions: i) S e > S e,th , where electronic energy dissipation fully suppresses damage production due to nuclear energy loss along incident ion paths, and ii) S e < S e,th , where simultaneous damage recovery due to Se competes with damage production processes. Here, the electronic energy loss threshold (S e,th ) increases sublinearly with incident ion atomic number. Here, the assessment of S e,th and how it affects damage accumulation is important to advance the understanding of complex processes occurring under ion-solid interactions, as well as in the design of functional materials for opto-electronics and novel structural materials and devices tolerant to harsh thermal and radiation environments.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Electronic stopping in molecular dynamics simulations of cascades in 3C–SiC

Here, we investigate the effect of the electronic stopping power on defect production due to ion irradiation of cubic silicon carbide using molecular dynamics simulations. We simulate 20 keV and 30 keV Si and C ions, with and without the electronic energy loss. The results show that the electronic stopping effects are more profound in the case of C irradiation, where the ratio of the electronic energy loss S e to the nuclear energy loss S n is much larger compared to the ratio for Si ions. These findings indicate that this ratio plays a role in the effect of the electronic stopping on ion irradiation.

36 MATERIALS SCIENCE↗