Global diversity and distribution of antibiotic resistance genes in human wastewater treatment systems
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Science & Technology - Other Topics↗
Engineering topics
Young, Michelle
Publications and source records attributed to Young, Michelle.
Planarizing Spalled GaAs(100) Surfaces by MOVPE Growth
III-V photovoltaic devices have demonstrated remarkable performance in many applications, and spalling is a promising technique for reducing device costs by recovering the substrate for reuse. In this study, we investigate the in situ planarization of A-directionally spalled GaAs(100) substrates using metal-organic vapor phase epitaxy (MOVPE) grown C:GaAs with CCl4 as the carbon source. We have characterized the (100)-oriented growth for various CCl4 flow rates and observed that the CCl4 or its by-products promote material diffusion from the facet tops to the underlying valleys. For facets with a height of 5 ..mu..m on a substrate with an A-spall and 6 degreesB -offcut, it took 7 ..mu..m of C:GaAs to planarize the substrate. For a similar sample, with a 6 degreesA -offcut, it required 2 ..mu..m of growth to fill the valleys but there were remnant facets.
III-V↗
Planarizing Spalled GaAs(100) Surfaces by MOVPE Growth
III-V photovoltaic devices have demonstrated exceptional performance across various applications, with controlled crystal fracturing, known as controlled spalling, emerging as a promising method to reduce costs by enabling substrate reuse. Spalling GaAs(100) substrates, a commonly used substrate in III-V photovoltaics, results in faceted ridges that must be planarized to grow high-quality photovoltaic devices. Here, in this study, we demonstrate that a GaAs(100) wafer offcut toward [$0\bar{11}$] and spalled toward [$011$] can be efficiently planarized by growing C:GaAs by metal-organic vapor phase epitaxy (MOVPE) on the surface, with up to 95% of the nominally deposited material used to fill the valleys between ridges. We find that reducing the offcut to 2° enhances the planarizing capability of C:GaAs. A surface morphology model indicates that the density of surface dangling bonds significantly influences the growth evolution of undoped GaAs surfaces. In contrast, the model suggests that the effectiveness of C:GaAs as a smoothing layer stems from modifying the atomic surface structure and, consequently, the associated sticking coefficients of the facets, which can alter the evolution of surface morphology. Our findings provide guidelines for the epitaxial planarization of semiconductor surfaces and improve the understanding of MOVPE growth on nonplanar surfaces.
14 SOLAR ENERGY↗
GaAs solar cells grown on acoustically spalled GaAs substrates with 27% efficiency
Acoustic spalling presents a potentially low-cost reuse pathway for III–V epitaxial growth substrates via exfoliation of device layers with recovery and reuse of the substrate. However, surface features formed during spalling can reduce the performance of subsequently grown devices. Here, we develop an understanding of how the surface morphology of acoustically spalled substrates affects GaAs solar cell performance and develop strategies to mitigate these impacts. We demonstrate that minor planarization of the surface by wet chemical etching and/or epitaxial growth, or the redesign of the device structure to thicken critical layers, prevents performance degradation. Using these strategies, we demonstrate a 0.25 cm 2 single-junction GaAs device with 26.9% ± 0.2% photovoltaic conversion efficiency under the AM1.5G spectrum grown on an acoustically spalled substrate. These results enable the growth of high-performance III–V devices on non-traditional substrates with the potential for significantly reduced device costs.
14 SOLAR ENERGY↗
Hybrid Tandem Photovoltaics
Tandem solar cell structures are the only strategy demonstrated to surpass the detailed balance efficiency limit of high-quality single-junction solar cells. To continue to improve the efficiencies of cost-effective terrestrial solar power, hybrid tandems of dissimilar subcells are being considered by many around the world, especially designs that incorporate silicon solar cells as a bottom subcell. In this project, we studied a wide variety of tandem design possibilities including those with three-terminal (3T) and four-terminal (4T) configurations. The use of 3T and 4T designs could be useful for efficient and economical hybrid tandem designs that utilize the best available subcell materials such as emerging perovskite materials. Three-terminal configurations, in particular, have not been sufficiently studied previously. We have laid the foundational groundwork in this project for understanding the operation of 3T tandems: developing a taxonomy for naming, a methodology for measuring and interconnecting, and models for simply characterizing 3T tandems. Electrical and optical subcell coupling between the subcells was also measured and modeled. An important part of this work was the fabrication of novel example tandem structures, including 4T GaAs/Si, 3T GaInP/Si, 3T GaAs/Si, and 3T GaInP/GaAs devices. Using these high-quality tandem cells, we have been able to clearly demonstrate the achievability of high-efficiencies, and subtle physical effects such as photon recycling and luminescent coupling. We have developed and demonstrated essential building-block tools such as transparent conductive adhesives (TCA) and 3T silicon bottom cells with interdigitated back contacts (IBC) that can also be used in many other tandem designs. We have tested the reliability of these tools and devices under standardized testing and outdoor measurements. We have found 4T GaAs/Si tandems to be relatively straightforward to fabricate and robust in real-world outdoor conditions. While we have demonstrated working hybrid 3T III-V/TCA/Si IBC tandems, we experienced low yields even with our best process flows yet. Further work is still needed to improve the processing yield of these devices. We therefore also created tandem cells using an all-III-V 3T tandem process which was very robust with high yields, allowing for the creation of voltage-matched strings in many different configurations using 8 nearly identical 3T tandems. Using these robust 3T tandem examples, we were able measure and precisely characterize 3T tandem behaviors to predict their operation under changing spectrum and temperature. The optoelectronic equivalent-circuit model was shown to be very general and applicable to hybrid tandems, and encompassed the operation 3T Si IBC cells. This general model has been distributed to the public in as open-source Python-based software called PVcircuit. We have calculated the implications of these new tandem device designs on the real-world energy production and shown how the relative performance of different tandem configurations is situational and can be engineered using the tools developed here.
14 SOLAR ENERGY↗
Membrane Carbonation for 100% Efficient Delivery of Industrial CO 2 Gases
Industrial processes generate about one quarter of all greenhouse gases emissions in the US, about 80% of which is carbon dioxide (CO 2 ). Biological processes are one of the largest natural sinks for atmospheric CO 2 , but the rate of capture is limited by the low concentration in air (~0.04%). Industrial emissions have significantly higher CO 2 concentrations, ranging from 5–80% CO 2 , which can significantly increase the rate of biological CO 2 capture, including many-fold improvements for cultivating microalgae to produce food, fertilizer, and renewable fuel. However, traditional methods for delivering CO 2 to microalgae using bubbling is < 40% efficient, leading to significant residual CO 2 emissions and increased cost. This project developed the Membrane Carbonation (MC) technology to significantly improve the CO 2 delivery efficiency to microalgae from power plant flue gas, wastewater treatment plant anaerobic digesters biogas (Figure 1), and other CO 2 -containing industrial sources.
09 BIOMASS FUELS↗
Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices
Multijunction solar cell design is guided by both the theoretical optimal bandgap combination as well as the realistic limitations to materials with these bandgaps. For instance, triple-junction III-V multijunction solar cells commonly use GaAs as a middle cell because of its near-perfect material quality, despite its bandgap being higher than optimal for the global spectrum. Here, we modify the middle cell bandgap using thick GaInAs/GaAsP strain-balanced quantum well (QW) solar cells with excellent voltage and absorption. Additionally, these high-performance QWs are incorporated into a triple-junction inverted metamorphic multijunction device consisting of a GaInP top cell, GaInAs/GaAsP QW middle cell, and lattice-mismatched GaInAs bottom cell, each of which has been highly optimized. We demonstrate triple-junction efficiencies of 39.5% and 34.2% under the AM1.5 global and AM0 space spectra, respectively, and the global efficiency is higher than previous record six-junction devices.
14 SOLAR ENERGY↗
Efficient light-trapping in ultrathin GaAs solar cells using quasi-random photonic crystals
Ultrathin solar cells reduce material usage and allow the use of lower-quality materials thanks to their one order of magnitude smaller thickness than their conventional counterparts. However, efficient photonic light-trapping is required to harvest the incident light efficiently for an otherwise insufficient absorber thickness. Quasi-random photonic crystals are predicted to have high efficient light-trapping while being more robust under angle and thickness variations than simple photonic crystals. In this study, we experimentally demonstrate a light-trapping solution based on quasi-random photonic crystals fabricated by polymer blend lithography. We control the average lattice parameter by modifying the spin-coating speed. We demonstrate an ultrathin GaAs cell of 260 nm with a rear quasi-random pattern with submicron features, and a J sc = 26.4 mA/cm 2 and an efficiency of 22.35% under the global solar spectrum.
14 SOLAR ENERGY↗
32.9% Efficient Tandem Solar Cell with Strain-Balanced GaInAs/GaAsP Quantum Wells: Preprint
We demonstrate single and dual junction solar cells with up to 80 strain-balanced GaInAs/GaAsP quantum wells (QWs), in order to extend the range of photon absorption. The net average stress in the quantum well layers is =12 MPa, despite coherent stresses in the individual layers that are 35-70 times greater. The GaAs-QW cell has a certified efficiency of (27.2 ± 0.2)% at one-sun; the GaInP/GaAs-QW tandem has a certified record one-sun efficiency of (32.9 ± 0.5)%. We will discuss the architecture of the devices, the physics behind the high performance, and pathways to further improvement.
GaAsP↗
Fabrication of Quasi-Random Photonic Crystals for Ultrathin Solar Cells
Quasi-random structures for light management present an intermediate ordering between a completely random rough surface and a perfect ordered photonic crystal. They are attractive for broadband applications due to their power spectral density. This makes them excellent candidates for photovoltaic applications. Here we present preliminary fabrication results creating quasi-random structures using a self-assembly approach based on polymer blends and wet etching. We are able to create patterns with average lattice constant of five to two microns. This structure is proposed to be used as a rear patterning layer for ultrathin GaAs cells for better sustainability and radiation- hard devices.
41 EE - Solar Energy Technologies Office (EE-4S)↗
32.9% Efficient Tandem Solar Cell with Strain-Balanced GaInAs/GaAsP Quantum Wells
We demonstrate single and dual junction solar cells with up to 80 strain-balanced GaInAs/GaAsP quantum wells (QWs), in order to extend the range of photon absorption. The net average stress in the quantum well layers is =12 MPa, despite coherent stresses in the individual layers that are 35-70 times greater. The GaAs-QW cell has a certified efficiency of (27.2 ± 0.2)% at one-sun; the GaInP/GaAs-QW tandem has a certified record one-sun efficiency of (32.9 ± 0.5)%. We will discuss the architecture of the devices, the physics behind the high performance, and pathways to further improvement.
III-V↗
Voltage-Matched Strings using 3-Terminal Tandems: Fundamentals and End Losses
Strings constructed from 3-terminal tandem (3TT) cells can provide some of the performance benefits of voltage-matching with less cell complexity than strings based on 4-terminal tandem cells. However, the circuitry for a 3TT string can become more complex, making circuit analysis more challenging. Here we illustrate the essential features of single-polarity voltage-matched (VM) 3TT strings using representative examples. End losses are intrinsic to this type of string, but can be reduced by minimizing m and n in the Vtop/Vbot VM ratio m/n, and further mitigated by increasing the string length. This analysis agrees with preliminary experimental results.
3TT↗
World Record Demonstration of > 30% Thermophotovoltaic Conversion Efficiency
Thermophotovoltaic (TPV) devices are solid-state heat engines that convert thermal radiation into electricity using semiconductor diodes, and have applications in energy storage, primary power conversion, and waste heat recovery. Higher temperature emitters and wider band gap photovoltaics (PVs) generally afford higher TPV efficiencies. High temperature emitters are accessible in thermal energy storage applications. We have demonstrated a world record 31% +/- 2% TPV conversion efficiency with a 0.9 cm2 GaAs-based PV device under a 2430 °C thermal emitter, producing an electrical output power of 2.23 W. Critical to the result was the cell’s high reflectance of photon energies below the device band gap. Unlike solar PV, for which sub-band gap (SBG) light is lost, a TPV cell can reflect and recycle SBG light to the thermal emitter. The demonstration was made on a custom-built measurement platform in which a ~100 cm2 graphite thermal emitter was heated under vacuum up to 2430 °C. The TPV efficiency was evaluated by comparing the measured electrical output power of the TPV with the calorimetrically measured total net power incident on the cell. The measured TPV efficiency as a function of thermal emitter temperature was corroborated by our full system modeling predictions. As far as the authors are aware, this is the highest TPV conversion efficiency ever measured, and device improvements should yield > 40% efficiency in the near future.
27 ARPA - Advanced Research Projects Agency-Energy↗
High Efficiency Inverted GaAs and GaInP/GaAs Solar Cells With Strain-Balanced GaInAs/GaAsP Quantum Wells
High-efficiency solar cells are essential for high-density terrestrial applications, as well as space and potentially vehicle applications. The optimum bandgap for the terrestrial spectrum lies beyond the absorption range of a traditional dual junction GaInP/GaAs cell, with the bottom GaAs cell having higher bandgap energy than necessary. Lower energy bandgaps can be achieved with multiple quantum wells (QWs), but such a pathway requires advanced management of the epitaxial growth conditions in order to be useful. Strain-balanced GaAsP/GaInAs QWs are incorporated into a single junction GaAs solar cell and a dual junction GaInP/GaAs solar cell, leading to 27.2% efficiency in the single junction device and a one-sun record 32.9% efficiency in the tandem device. Good carrier collection and low non-radiative recombination are observed in the cells with up to 80 QWs. The GaAs cells employ a rear-heterojunction architecture to boost the open-circuit voltage to over 1.04 V in the quantum well device, despite the large number of QWs.
14 SOLAR ENERGY↗
High Efficiency 6-Junction Solar Cells for the Global and Direct Spectra
We show 6-junction inverted metamorphic solar cells with high efficiencies under both the global and direct spectrum, and discuss improvements to device components. High voltage AlGaInP subcells are demonstrated on GaAs substrates miscut 2° towards (111)B by using Sb surfactant to reduce atomic ordering. This miscut enables high voltage and low dislocation density GaInAs subcells by using atomically-ordered GaInP-based graded buffers. One-sun efficiencies of 39.2 ± 1.3% under the global spectrum and 39.4 ± 1.1% direct spectrum have been demonstrated by using these high voltage subcell components. For high efficiency under the concentrated direct spectrum, low resistance is also necessary, which requires a challenging and nonintuitive optimization of tunnel junctions and heterobarriers. Increasing the thickness of a (Al)GaInAs spacer layer between the back surface fields (BSF) and tunnel junctions (TJ) of latticemismatched subcells reduces nonlinear resistance, which implies a detrimental interaction between the BSF and TJ. Concentrator devices with optimized spacer layers show reduced effective resistance and maintain fill factor > 75% at 1100 suns. Device efficiencies under the concentrated direct spectrum peak at 47.1 ± 3.2% at 143 suns.
41 EE - Solar Energy Technologies Office (EE-4S)↗
Liquefaction of Forest Biomass to "Drop-in" Hydrocarbon Biofuels
The overall goal of the project was to demonstrate solvent liquefaction as a viable path to stable intermediates for subsequent upgrading to fuel blendstocks. Iowa State University (ISU) utilized technology developed by Chevron to produce “green crude” via continuous biomass liquefaction to bio-oil without catalyst or reducing gas, then upgraded the crude to drop-in hydrocarbon liquid transportation fuels. Original benchmarks for the project included conversion of biomass to bio-oil at a yield of 50% or more, produce bio-oil with oxygen content below 20 wt%, and recycle a portion of the bio-oil product for use as solvent, displacing initial hydrocarbon solvent. Initial testing and technology development was completed by Chevron using a custom Small Continuous Liquefaction Unit (SCLU) operated in “once-through” mode. In this system, liquid product and solid residual/char was collected together and required both off-line solids removal and product separation. This unit was disassembled and major components incorporated into a redesigned solvent liquefaction system at ISU capable of processing biomass at rates up to 1 kg/h. Online, continuous solids separation and bio-oil recovery/separation systems were successfully implemented. Online solids removal using an acetone injection to aid in separation achieved over 99% solids removal efficiency, and acetone recovery of greater than 97% was achieved. The gas stripping system developed for the separation of medium wood oil (MWO) for the recycle stream from the heavy wood oil (HWO) product stream was also successful in recovering approximately 93 wt% of the initial solvent from the biomass-derived products. Due to the generation of fine particulate and the high molecular weight of the HWO which both negatively affect the ability to separate the product oil, solvent recycle was not fully implemented in the system. The biomass used in this project is loblolly pine forest residue. The solvent was a blend of two hydrocarbon liquids. The majority of the solvent was comprised of commercially available naphthalene-depleted heavy aromatic solvent. The hydrogen donor solvent was a proprietary cut of light cycle oil (LCO) that was hydrotreated. As much as 25 wt% of the solvent mixture was comprised of the hydrotreated LCO. Higher blend ratios were limited by the economics of providing hydrogen to the process in this manner. Two cases were evaluated for technical feasibility on the SCLU. These are 1. Simulated phenolic solvent recycle and 2. Hydrocarbon-rich solvent processing. The simulated phenolic solvent recycle case was based on an idealistic solvent mixture where only 5% makeup or hydrogen donor solvent entered the system. The resulting solvent mixture at steady state was estimated to be 75 wt% depleted hydrogen donor, 20 wt% biomass derived phenolic monomers, and 5 wt% HLCO. This case resulted in the highest bio-oil organic yield observed in the project of 66.7 wt% on a solvent-less, dry biomass basis and relatively low oxygen content of 12%. Additionally, these conditions deconstructed the biomass so well, that extremely fine particulate was generated such that 5 micron barrier filters were unable to remove the material. Offline addition of acetone, centrifugation and acetone removal were required in order to remove the particulate prior to fractionation with the stripping column. The resulting HWO had a high molecular weight and was therefore very viscous in nature, remaining solid at room temperature. Additionally, the column was unable to sustainably strip enough MWO to close the recycle loop balance while maintaining flowability of product oil exiting the column. It was determined that additional HLCO would be required at the front of the process to decrease product viscosity both by dilution and additional hydrogen transfer into the HWO product oil. The hydrocarbon rich mixture was the preferred mixture for a majority of the project and featured a 25% donor or HLCO content and 75% depleted hydrogen donor mix. A series of three tests were conducted using this mixture and serve as the basis for a paper detailing the system. While the online acetone injection system for high pressure solids removal was demonstrated early on using this mixture, difficulty controlling process flows led to the use of an atmospheric stirred tank filtration system. At these high donor solvent levels, the product stream easily partitioned with sufficient MWO to close the recycle loop balance. Additionally, this mixture produced HWO product oil at just over 55% yield, <5% oxygen content, and a reasonable viscosity at room temperature. A 56 hour campaign was conducted with the ISU pilot to produce a large enough batch of HWO product oil to conduct upgrading experiments at Chevron’s Richmond, CA facility. Benchtop hydrotreating units were used to conduct long-duration hydrogenation/hydrogenolysis reactions in order to provide yield data and help validate assumptions made in the TEA model. Resulting products featured an oxygen content of <1%, near the detectability limit. Hydrocracking simulations were also performed, and a distribution of heavy wood oil to refinery products was determined. These distributions are based on a database of commercial and pilot plant operation used by Chevron to estimate product yield from novel inputs based on the input physical and chemical characteristics. While multi-week benchtop hydrotreating tests were successfully conducted without fouling, analysis and testing of the heavy wood oil suggest it may be better suited for hydrocracking. Metals content in the heavy wood oil would likely create catalyst fouling over time and reduce lifetime of hydrotreating catalysts. Yields and product partitioning were also more favorable from hydrocracking compared to those from hydrotreating.
09 BIOMASS FUELS↗
Development of Lattice-Matched 1.7 eV GalnAsP Solar Cells Grown on GaAs by MOVPE
To advance the state-of-the-art in III-V multijunction solar cells towards high concentration efficiencies approaching 50%, development of a high-quality ~1.7 eV second junction solar cell is of key interest for integration in five or more junction devices. Quaternary GalnAsP solar cells grown lattice-matched on GaAs allows bandgap tunability in the range from 1.42 to 1.92 eV and offers an attractive Al-free alternative to conventional AlGaAs solar cells. In this work, we investigate the role of growth temperature towards understanding the optimal growth window for realizing high-quality GalnAsP alloys. We demonstrate bandgap tunability from 1.6 to 1.8 eV in GalnAsP alloys for compositions close to the miscibility gap, while still maintaining lattice-matched condition to GaAs. We perform an in-depth investigation to understand the impact of varying base thickness and doping concentration on the carrier collection and performance of these 1.7 eV GalnAsP solar cells. The photo-response of these cells is found to be very sensitive to p-type zinc dopant incorporation in the base layer. We demonstrate prototype 1.7 eV GalnAsP solar cell designs that leverage enhanced depletion width as an effective method to overcome this issue and boost long-wavelength carrier collection. Short-circuit current density (JSC) measured in field-aided devices were as high as 17.25 m A/cm2. The best GalnAsP solar cell in this study achieved an efficiency of 17.2% with a JSC of 17 m A/cm2 and a fill-factor of 86.4%. The corresponding open-circuit voltage (VOC) 1.7 eV measured on this cell represents the highest Voc reported for a 1.7 eV GalnAsP solar cell. These initial cell results are encouraging and highlight the potential of Al-free GalnAsP solar cells for integration in the next generation of III-V multijunction solar cells.
14 SOLAR ENERGY↗
InGaAsP Solar Cells Grown by Hydride Vapor Phase Epitaxy
Hydride vapor phase epitaxy (HVPE) has recently reemerged as a low-cost, high-throughput alternative to metalorganic chemical vapor deposition (MOCVD) for the growth of high-efficiency III-V solar cells. Quaternary InGaAsP solar cells in the bandgap range of ~1.7-1.8 eV are promising top-cell candidates for integration in Ill-V/Si tandem cells with projected one-sun efficiencies exceeding 30%. In this work, we report on the development of lattice-matched InGaAsP solar cells grown on GaAs substrates via HVPE at very high growth rates of ~0.7 um/min. We demonstrate prototype 1.7 eV InGaAsP solar cells with an open-circuit voltage of 1.11 V. The short-circuit current is limited by the lack of a window layer in these early stage devices. The photo response of 1.7 InGaAsP solar cell with ~1.1 um thick base layer is found to be nearly insensitive to variation in p-type base doping concentration in the range from Na - 4x1016 to - 1x1017 cm-3, indicating an effective carrier collection length on the order of - 1.1 um or higher in our devices. These initial InGaAsP cell results are encouraging and highlight the viability of HVPE to produce mixed arsenide-phosphide solar cells grown lattice-matched on GaAs.
14 SOLAR ENERGY↗