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Yin, Gen

Publications and source records attributed to Yin, Gen.

14 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Curvature Induced Modifications of Chirality and Magnetic Configuration in Perpendicular Films

Designing curvature in three-dimensional (3D) magnetic nanostructures enables controlled manipulation of local energy landscapes, allowing for the modification of noncollinear spin textures relevant for next-generation spintronic devices. In this study, we experimentally investigate 3D magnetization textures in a Co/Pd multilayer film, exhibiting strong perpendicular magnetic anisotropy (PMA), deposited onto curved Cu nanowire meshes with diameters as small as 50 nm and lengths of several microns. Utilizing magnetic soft X-ray nanotomography, we achieve reconstructions of 3D magnetic domain patterns at approximately 30 nm spatial resolution. This approach provides detailed information on both the orientation and magnitude of magnetization within the film. Our results reveal that interfacial anisotropy in the Co/Pd multilayers drives the magnetization toward the local surface normal. In contrast to typical labyrinth domains observed in planar films, the presence of curved nanowires significantly alters the domain structure, with domains preferentially aligning along the nanowire axis in close proximity, while adopting random orientations farther away. We report direct experimental observation of a curvature-induced Dzyaloshinskii-Moriya interaction (DMI), which is quantified to be approximately one-third of the intrinsic DMI in Co/Pd stacks. The curvature induced DMI enhances stability of Néel-type domain walls. These experimental observations are further supported by micromagnetic simulations. Altogether, our findings demonstrate that introducing curvature into magnetic nanostructures provides a powerful strategy for tailoring complex magnetic behaviors, paving the way for the design of advanced 3D racetrack memory and neuromorphic computing devices.

Raftrey, David↗
DOE OSTI2023

Quantized resistance revealed at the criticality of the quantum anomalous Hall phase transitions

In multilayered magnetic topological insulator structures, magnetization reversal processes can drive topological phase transitions between quantum anomalous Hall, axion insulator, and normal insulator states. Here we report an examination of the critical behavior of two such transitions: the quantum anomalous Hall to normal insulator (QAH-NI), and quantum anomalous Hall to axion insulator (QAH-AXI) transitions. By introducing a new analysis protocol wherein temperature dependent variations in the magnetic coercivity are accounted for, the critical behavior of the QAH-NI and QAH-AXI transitions are evaluated over a wide range of temperature and magnetic field. Despite the uniqueness of these different transitions, quantized longitudinal resistance and Hall conductance are observed at criticality in both cases. Furthermore, critical exponents were extracted for QAH-AXI transitions occurring at magnetization reversals of two different magnetic layers. The observation of consistent critical exponents and resistances in each case, independent of the magnetic layer details, demonstrates critical behaviors in quantum anomalous Hall transitions to be of electronic rather than magnetic origin. Our finding offers a new avenue for studies of phase transition and criticality in QAH insulators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr 2 Te 3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr 2 Te 3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr 2 Te 3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic layers/domains. The versatile interface tunability of Berry curvature in Cr 2 Te 3 thin films offers new opportunities for topological electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ultrasensitive Sub-monolayer Palladium Induced Chirality Switching and Topological Evolution of Skyrmions

Chiral spin textures are fundamentally interesting, with promise for device applications. Stabilizing chirality is conventionally achieved by introducing Dzyaloshinskii-Moriya interaction (DMI) in asymmetric multilayers, where the thickness of each layer is at least a few monolayers. Here we report an ultrasensitive chirality switching in (Ni/Co) n multilayer induced by capping with only 0.22 monolayer of Pd. Using spin-polarized low-energy electron microscopy, we monitor the gradual evolution of domain walls from left-handed to right-handed Néel walls and quantify the DMI induced by the Pd capping layer. We also observe the chiral evolution of a skyrmion during the DMI switching, where no significant topological protection is found as the skyrmion winding number varies. This corresponds to a minimum energy cost of <1 attojoule during the skyrmion chirality switching. Here, our results demonstrate the detailed chirality evolution within skyrmions during the DMI sign switching, which is relevant to practical applications of skyrmionic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Probing the mesoscopic size limit of quantum anomalous Hall insulators

The inelastic scattering length (L s ) is a length scale of fundamental importance in condensed matters due to the relationship between inelastic scattering and quantum dephasing. In quantum anomalous Hall (QAH) materials, the mesoscopic length scale L s plays an instrumental role in determining transport properties. Here we examine L s in three regimes of the QAH system with distinct transport behaviors: the QAH, quantum critical, and insulating regimes. Although the resistance changes by five orders of magnitude when tuning between these distinct electronic phases, scaling analyses indicate a universal L s among all regimes. Finally, mesoscopic scaled devices with sizes on the order of L s were fabricated, enabling the direct detection of the value of L s in QAH samples. Our results unveil the fundamental length scale that governs the transport behavior of QAH materials.

42 ENGINEERING↗
DOE OSTI2022

A Van der Waals Interface Hosting Two Groups of Magnetic Skyrmions

Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion-based ultrahigh-density spin memory devices. Extending the field to 2D van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g., thickness, twist angle, and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality. In this work, a van der Waals interface, formed by two 2D ferromagnets Cr 2 Ge 2 Te 6 and Fe 3 GeTe 2 with a Curie temperature of ≈65 and ≈205 K, respectively, hosting two groups of magnetic skyrmions, is reported. Two sets of topological Hall effect signals are observed below 6s0 K when Cr 2 Ge 2 Te 6 is magnetically ordered. These two groups of skyrmions are directly imaged using magnetic force microscopy, and supported by micromagnetic simulations. Interestingly, the magnetic skyrmions persist in the heterostructure with zero applied magnetic field. The results are promising for the realization of skyrmionic devices based on van der Waals heterostructures hosting multiple skyrmion phases.

2D magnetism↗
DOE OSTI2021

Discrete quantum geometry and intrinsic spin Hall effect

We show that the quantum geometry of the Fermi surface can be numerically described by a three-dimensional discrete quantum manifold. This approach not only avoids singularities in the Fermi sea, but it also enables the precise computation of the intrinsic Hall conductivity resolved in spin, as well as any other local properties of the Fermi surface. The method assures numerical accuracy when the Fermi level is arbitrarily close to singularities, and it remains robust when Kramers degeneracy is protected by symmetry. Furthermore, the approach is demonstrated by calculating the anomalous Hall and spin Hall conductivities of a two-band lattice model of a Weyl semimetal and a full-band ab initio model of zinc-blende GaAs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

3D Nanomagnetism in Low Density Interconnected Nanowire Networks

Free-standing, interconnected metallic nanowire networks with densities as low as 40 mg/cm 3 have been achieved over centimeter-scale areas, using electrodeposition into polycarbonate membranes that have been ion-tracked at multiple angles. Networks of interconnected magnetic nanowires further provide an exciting platform to explore 3-dimensional nanomagnetism, where their structure, topology, and frustration may be used as additional degrees of freedom to tailor the materials properties. New magnetization reversal mechanisms in cobalt networks are captured by the first-order reversal curve method, which demonstrate the evolution from strong demagnetizing dipolar interactions to intersection-mediated domain wall pinning and propagation, and eventually to shape-anisotropy dominated magnetization reversal. These findings open up new possibilities for 3-dimensional integrated magnetic devices for memory, complex computation, and neuromorphics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure

Integration of a quantum anomalous Hall insulator with a magnetically ordered material provides an additional degree of freedom through which the resulting exotic quantum states can be controlled. Here, an experimental observation is reported of the quantum anomalous Hall e?ect in a magnet-ically-doped topological insulator grown on the antiferromagnetic insulator Cr?O?. The exchange coupling between the two materials is investigated using ?eld-cooling-dependent magnetometry and polarized neutron re?ec-tometry. Both techniques reveal strong interfacial interaction between the antiferromagnetic order of the Cr?O? and the magnetic topological insulator, manifested as an exchange bias when the sample is ?eld-cooled under an out-of-plane magnetic ?eld, and an exchange spring-like magnetic depth pro?le when the system is magnetized within the ?lm plane. These results identify antiferromagnetic insulators as suitable candidates for the manipula-tion of magnetic and topological order in topological insulator ?lms.

Pan, Lei↗
DOE OSTI2020

Termination switching of antiferromagnetic proximity effect in topological insulator

This work reports the ferromagnetism of topological insulator, (Bi,Sb) 2 Te 3 (BST), with a Curie temperature of approximately 120 K induced by magnetic proximity effect (MPE) of an antiferromagnetic CrSe. The MPE was shown to be highly dependent on the stacking order of the heterostructure, as well as the interface symmetry: Growing CrSe on top of BST results in induced ferromagnetism, while growing BST on CrSe yielded no evidence of an MPE. Cr-termination in the former case leads to double-exchange interactions between Cr 3+ surface states and Cr 2+ bulk states. This Cr 3+ -Cr 2+ exchange stabilizes the ferromagnetic order localized at the interface and magnetically polarizes the BST Sb band. In contrast, Se-termination at the CrSe/BST interface yields no detectable MPE. These results directly confirm the MPE in BST films and provide critical insights into the sensitivity of the surface state.

42 ENGINEERING↗
DOE OSTI2020

Néel-type skyrmion in WTe 2 /Fe 3 GeTe 2 van der Waals heterostructure

The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials provide a new platform for the discovery of novel physics and effects. Here we demonstrate the Dzyaloshinskii–Moriya interaction and Néel-type skyrmions are induced at the WTe 2 /Fe 3 GeTe 2 interface. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmion lattice and the stripe-like magnetic domain structures as well. The interfacial coupling induced Dzyaloshinskii–Moriya interaction is estimated to have a large energy of 1.0 mJ m –2 . This work paves a path towards the skyrmionic devices based on van der Waals layered heterostructures.

42 ENGINEERING↗
DOE OSTI2020

Probing the low-temperature limit of the quantum anomalous Hall effect

Quantum anomalous Hall effect has been observed in magnetically doped topological insulators. However, full quantization, up until now, is limited within the sub–1 K temperature regime, although the material’s magnetic ordering temperature can go beyond 100 K. Here, we study the temperature limiting factors of the effect in Cr-doped (BiSb)2Te3 systems using both transport and magneto-optical methods. By deliberate control of the thin-film thickness and doping profile, we revealed that the low occurring temperature of quantum anomalous Hall effect in current material system is a combined result of weak ferromagnetism and trivial band involvement. Our findings may provide important insights into the search for high-temperature quantum anomalous Hall insulator and other topologically related phenomena.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

Strongly Surface State Carrier‐Dependent Spin–Orbit Torque in Magnetic Topological Insulators

Abstract The topological surface states (TSS) in topological insulators (TIs) can exert strong spin–orbit torque (SOT) on adjacent magnetization, offering great potential in implementing energy‐efficient magnetic memory devices. However, there are large discrepancies among the reported spin Hall angle values in TIs, and its temperature dependence still remains elusive. Here, the spin Hall angle in a modulation‐doped Cr‐Bi x Sb 2− x Te 3 (Cr‐BST) film is quantitatively determined via both transport and optic approaches, where consistent results are obtained. A large spin Hall angle of ≈90 in the modulation‐doped Cr‐BST film is demonstrated at 2.5 K, and the spin Hall angle drastically decreases to 0.3–0.5 as the temperature increases. Moreover, by tuning the top TSS carrier concentration, a competition between the top and bottom TSS in contributing to SOT is observed. The above phenomena can account for the large discrepancies among the previously reported spin Hall angle values and reveal the unique role of TSS in generating SOT.

Che, Xiaoyu↗