Engineering topics
Publications and source records attributed to Yeh, T. H..
Improved method fabricates electroluminescent planar P-N gallium arsenide diodes. GaAs is masked with silicon monoxide to allow P-type impurities to be diffused into unmasked portions of GaAs to form P-N junctions.
Electrically controlled optical latch consists of a sensitive phototransistor and a solid-state light source. This design requires less current to activate an optically activated switch than in prior art.
Light activated low level switch consisting of electroluminescent GaAs p-n diode and double emitter silicon transistor