Engineering topics

Yang, Zihao

Publications and source records attributed to Yang, Zihao.

3 records

DOE OSTI2023

CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer

We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resolution X-ray diffraction and transmission electron microscopy analyses unveiled enhanced crystallinity of (111)-oriented δ-phase NbN with the AlN buffer layer. Notably, NbN films deposited on AlN-buffered Si substrates exhibited a significantly elevated superconducting critical temperature (~2 K higher for the 10 nm NbN) and a higher upper critical magnetic field or H c2 (34.06 T boost in H c2 for the 50 nm NbN) in comparison with those without AlN. These findings present a promising pathway for the integration of quantum-grade superconducting NbN films with the existing 300 mm CMOS Si platform for quantum information applications.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Correlation between thickness dependent nanoscale structural chemistry and superconducting properties of ultrathin epitaxial NbN films

NbN-based superconductors have attracted interest for superconducting circuits, quantum computation and high frequency devices. The superconducting properties of NbN films are predominately reliant on the microstructure, therefore, an atomic-level understanding of the structure-chemistry is required to achieve high quality epitaxial NbN films. Here, in this study, the thickness-dependent superconducting properties of NbN films (5, 10, and 50 nm) within NbN/AlN/Al 2 O 3 heterostructures are investigated. NbN and AlN were epitaxially grown by an industrial scale physical vapor deposition technique. The role of nanoscale chemistry on the ultrathin NbN superconducting film is investigated at the atomic level for the first time via atom probe tomography, providing three-dimensional atomic distribution, chemical homogeneity, effect of impurities, specially, in secondary phase formations and interfacial abruptness. The NbN film with 5 nm of thickness demonstrates a superconducting transition temperature of 11.2 K as compared to 50 nm NbN films with a transition temperature of 15.3 K. These thickness dependent variation of superconducting properties are associated with the chemical inhomogeneity in terms of in-plane N:Nb distribution, secondary phase formations and NbN/AlN interfacial abruptness as a function of the NbN films thicknesses. The analysis depicts the interplay between the surface/interface and the superconducting properties of ultrathin NbN films. These results provide insights on material design and growth that will enable the development of optimized superconducting NbN films for quantum devices.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Chemical Heterointerface Engineering on Hybrid Electrode Materials for Electrochemical Energy Storage

Abstract The chemical heterointerfaces in hybrid electrode materials play an important role in overcoming the intrinsic drawbacks of individual materials and thus expedite the in‐depth development of electrochemical energy storage. Benefiting from the three enhancement effects of accelerating charge transport, increasing the number of storage sites, and reinforcing structural stability, the chemical heterointerfaces have attracted extensive interest and the electrochemical performances of hybrid electrode materials have been significantly optimized. In this review, recent advances regarding chemical heterointerface engineering in hybrid electrode materials are systematically summarized. Especially, the intrinsic behaviors of chemical heterointerfaces on hybrid electrode materials are refined based on built‐in electric field, van der Waals interaction, lattice mismatch and connection, electron cloud bias and chemical bond, and their combination. The strategies for introducing chemical heterointerfaces are classified into in situ local transformation, in situ growth, cosynthesis, and other strategy. The recent progress about the chemical heterointerfaces engineering specially focusing on metal‐ion batteries, supercapacitors, and Li–S batteries are introduced in detail. Furthermore, the classification and characterization of chemical heterointerfaces are briefly described. Finally, the emerging challenges and perspectives about future directions of chemical heterointerface engineering are proposed.

Li, Wenbin↗