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Yang, Rui Q.

Publications and source records attributed to Yang, Rui Q..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Low Threshold, Long Wavelength Interband Cascade Lasers With High Voltage Efficiencies

Here, we report on the substantial advancement of long wavelength InAs-based interband cascade lasers (ICLs) utilizing advanced waveguides formed from hybrid cladding layers and targeting the 10-12 µm wavelength region. Modifications in the hole injector have improved carrier transport in these ICLs, resulting in significantly reduced threshold voltages (V th ) as low as 3.62 V at 80 K. Consequently, much higher voltage efficiencies were observed, peaking at about 73% at 10.3 µm and allowing for large output powers of more than 100 mW/facet. Also, low threshold current densities (J th ) of 8.8 A/cm 2 in cw mode and 7.6 A/cm 2 in pulsed mode near 10 µm were observed; a result of adjustments in the GaInSb hole well composition intended to reduce the overall strain accumulation in the ICL. Furthermore, an ICL from the second wafer operating at a longer wavelength achieved a peak voltage efficiency of 57% at 11.7 µm, with a peak output power of more than 27 mW/facet. This ICL went on to lase beyond 12 µm in both cw and pulsed modes, representing a new milestone in long wavelength coverage for ICLs with the standard W-QW active region.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Pushing the performance limits of long wavelength interband cascade lasers using innovative quantum well active regions

Here, we report significantly enhanced device performance in long wavelength interband cascade lasers (ICLs) by employing a recently proposed innovative quantum well (QW) active region containing strained InAsP layers. These ICLs were able to operate at wavelengths near 14.4 μm, the longest ever demonstrated for III–V interband lasers, implying great potential of ICLs to cover an even wider wavelength range. Also, by applying the aforesaid QW active region configuration on ICLs at relatively short wavelengths, ICLs were demonstrated at a low threshold current density (e.g., 13 A/cm 2 at 80 K) and at temperatures up to 212 K near 12.4 μm, more than 50 K higher than the previously reported ICLs with the standard W-shape QW active region at similar wavelengths. This suggests that the QW active region with InAsP layers can be used to improve device performance at the shorter wavelengths.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Long wavelength interband cascade lasers

InAs-based interband cascade lasers (ICLs) can be more easily adapted toward long wavelength operation than their GaSb counterparts. Devices made from two recent ICL wafers with an advanced waveguide structure are reported, which demonstrate improved device performance in terms of reduced threshold current densities for ICLs near 11 μm or extended operating wavelength beyond 13 μm. Here, the ICLs near 11 μm yielded a significantly reduced continuous wave (cw) lasing threshold of 23 A/cm 2 at 80 K with substantially increased cw output power, compared with previously reported ICLs at similar wavelengths. ICLs made from the second wafer incorporated an innovative quantum well active region, comprised of InAsP layers, and lased in the pulsed-mode up to 120 K at 13.2 μm, which is the longest wavelength achieved for III–V interband lasers.

47 OTHER INSTRUMENTATION↗
DOE OSTI2019

Interband cascade devices

Photovoltaic (PV) and photodetector (PD) devices, comprising a plurality of interband cascade (IC) stages, wherein the IC stages comprise an absorption region with a type-I superlattice and/or a bulk semiconductor material having a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.

14 SOLAR ENERGY↗
DOE OSTI2017

Narrow-Bandgap Interband Cascade Thermophotovoltaic Cells

In this paper, we report on the characterization of narrow-bandgap (E g ≈ 0.4 eV, at 300 K) interband cascade thermophotovoltaic (TPV) devices with InAs/GaSb/AlSb type-II superlattice absorbers. Two device structures with different numbers of stages (two and three) were designed and grown to study the influence of the number of stages and absorber thicknesses on the device performance at high temperatures (300-340 K). Maximum power efficiencies of 9.6% and 6.5% with open-circuit voltages of 800 and 530 mV were achieved in the three- and two-stage devices at 300 K, respectively. These results validate the benefits of a multiple-stage architecture with thin individual absorbers for efficient conversion of infrared radiation into electricity from low-temperature heat sources. Additionally, we developed an effective characterization method, based on an adapted version of Suns-V oc technique, to extract the device series and shunt resistance in these TPV cells.

14 SOLAR ENERGY↗
DOE OSTI2016

Short-wavelength interband cascade infrared photodetectors operating above room temperature

High temperature operation (250–340 K) of short-wavelength interband cascade infrared photodetectors (ICIPs) with InAs/GaSb/Al 0.2 In 0.8 Sb/GaSb superlattice absorbers has been demonstrated with a 50% cutoff wavelength of 2.9 μm at 300 K. Two ICIP structures, one with two and the other with three stages, were designed and grown to explore this multiple-stage architecture. At λ = 2.1 μm, the two- and three-stage ICIPs had Johnson-noise-limited detectivities of 5.1 × 10 9 and 5.8 ×10 9 cm Hz 1/2 /W, respectively, at 300 K. The better device performance of the three-stage ICIP over the two-stage ICIP confirmed the advantage of more stages for this cascade architecture. Furthermore, an Arrhenius activation energy of 450 meV is extracted for the bulk resistance-area product, which indicates the dominance of the diffusion current at these high temperatures.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Interband cascade (IC) photovoltaic (PV) architecture for PV devices

A photovoltaic (PV) device, comprising a PV interband cascade (IC) stage, wherein the IC PV stage comprises an absorption region with a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier. An IC PV architecture for a photovoltaic device, the IC PV architecture comprising an absorption region, an intraband transport region coupled to the absorption region, and an interband tunneling region coupled to the intraband transport region and to the adjacent absorption region, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.

14 SOLAR ENERGY↗
DOE OSTI2014

Interband Cascade Photovoltaic Cells

In this project, we are performing basic and applied research to systematically investigate our newly proposed interband cascade (IC) photovoltaic (PV) cells [1]. These cells follow from the great success of infrared IC lasers [2-3] that pioneered the use of quantum-engineered IC structures. This quantum-engineered approach will enable PV cells to efficiently convert infrared radiation from the sun or other heat source, to electricity. Such cells will have important applications for more efficient use of solar energy, waste-heat recovery, and power beaming in combination with mid-infrared lasers. The objectives of our investigations are to: achieve extensive understanding of the fundamental aspects of the proposed PV structures, develop the necessary knowledge for making such IC PV cells, and demonstrate prototype working PV cells. This research will focus on IC PV structures and their segments for utilizing infrared radiation with wavelengths from 2 to 5 μm, a range well suited for emission by heat sources (1,000-2,000 K) that are widely available from combustion systems. The long-term goal of this project is to push PV technology to longer wavelengths, allowing for relatively low-temperature thermal sources. Our investigations address material quality, electrical and optical properties, and their interplay for the different regions of an IC PV structure. The tasks involve: design, modeling and optimization of IC PV structures, molecular beam epitaxial growth of PV structures and relevant segments, material characterization, prototype device fabrication and testing. At the end of this program, we expect to generate new cutting-edge knowledge in the design and understanding of quantum-engineered semiconductor structures, and demonstrate the concepts for IC PV devices with high conversion efficiencies.

36 MATERIALS SCIENCE↗
NASA NTRS2010

High-Speed Operation of Interband Cascade Lasers

Optical sources operating in the atmospheric window of 3-5 microns are of particular interest for the development of free-space optical communication link. It is more advantageous to operate the free-space optical communication link in 3-5-microns atmospheric transmission window than at the telecom wavelength of 1.5 m due to lower optical scattering, scintillation, and background radiation. However, the realization of optical communications at the longer wavelength has encountered significant difficulties due to lack of adequate optical sources and detectors operating in the desirable wavelength regions. Interband Cascade (IC) lasers are novel semiconductor lasers that have a great potential for the realization of high-power, room-temperature optical sources in the 3-5-microns wavelength region, yet no experimental work, until this one, was done on high-speed direct modulation of IC lasers. Here, highspeed interband cascade laser, operating at wavelength 3.0 m, has been developed and the first direct measurement of the laser modulation bandwidth has been performed using a unique, highspeed quantum well infrared photodetector (QWIP). The developed laser has modulation bandwidth exceeding 3 GHz. This constitutes a significant increase of the IC laser modulation bandwidth over currently existing devices. This result has demonstrated suitability of IC lasers as a mid-IR light source for multi-GHz free-space optical communications links

Soibel, Alexander↗
NASA NTRS2007

Interband cascade detectors

A device for detecting radiation, typically in the infrared. Photons are absorbed in an active region of a semiconductor device such that the absorption induces an interband electronic transition and generates photo-excited charge carriers. The charge carriers are coupled into a carrier transport region having multiple quantum wells and characterized by intersubband relaxation that provides rapid charge carrier collection. The photo-excited carriers are collected from the carrier transport region at a conducting contact region. Another carrier transport region characterized by interband tunneling for multiple stages draws charge carriers from another conducting contact and replenishes the charge carriers to the active region for photo-excitation. A photocurrent is generated between the conducting contacts through the active region of the device.

Chuang, Shun Lien↗
NASA NTRS2006

Development of Efficient Mid-IR Interband Cascade Lasers for Chemical Sensing

Significant progress has been made: Above room temperature (up to 350K) pulsed operation has been demonstrated. CW operation temperature has been raised up to 237 K. DFB IC lasers have been applied for the detection of trace gases such as CH4, HCl, and H2CO. Devices have been operated continuously over several hundred hours without degradation. Main challenge remains for many potential applications of ICLs. CW operation at room temperature and above with significant output powers. There is still significant room for improvement: Laser design and material quality - many parameters have not been optimized. Device fabrication and thermal management (passivation, better mounting, etc.). Significantly higher output power can be achieved with laser arrays.

diode lasers↗
NASA NTRS2005

Mid-IR interband cascade lasers

Efficient mid-IR interband cascade (IC) lasers are developed based on 111-V semiconductor materials to cover wavelength range from 2.7 to 5.6 (mu)m. These IC lasers reuse injected electrons in cascade stages for photon generation with high quantum efficiency to achieve high output powers. Also, IC lasers have low threshold current density with very efficient use of applied voltage, resulting in reduced power consumptions. Single-mode distributed feedback lasers have been made, and integrated into aircraft and balloon instrument which made measurements of CH4 and HCI. In this work, the characteristics of IC lasers and their recent development are reviewed.

mid - infrared↗
NASA NTRS2004

Recent progress in the development of antimonide-based mid-ir interband cascade lasers

Antimonide-based type-II interband cascade lasers are promising in becoming efficient and compact mid-infrared light sources for many applications such as gas sensing and environmental monitoring. Significant progress toward such a goal has recently been made in terms of achieving low threshold current densities, high temperature operation, and continuous wave operation of single-mode distributed feedback lasers. We review the recent progress of Sb-based mid-IR IC lasers and address the requirements for further improvements in their performance.

semiconductor superlattices↗