Influence of interfacial properties on thermal transport at gold:silicon contacts.
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Engineering topics
Publications and source records attributed to Yang, Chu-Yeu Peter.
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The extreme nanoscale features prescribed by the International Technology Roadmap for Semiconductors (ITRS, e.g., 11nm half-pitch for dense patterns and 4.5nm critical dimensions by 2022) require infrastructure-heavy extreme ultraviolet (EUV) and/or alternative lithography approaches. We report here our efforts to direct the self assembly of block copolymers (BCP) into device-oriented patterns initially defined by optical interference lithography (IL), and the use of self-assembled BCP patterns as masks to create nanoimprint lithography (NIL) masters via plasma etching. This project reported the first self-assembly of regular sub-20nm features directed by large-area patterns defined by interference lithography with up to 4x density multiplication. Simulation coupled with experimental verification explored critical parameters driving the complex three-dimensional configurations arising from surface interactions during directed self-assembly. NIL of BCP-defined features and patterns was demonstrated as a route to simple plasmonic structures with enhanced optical response. Finally, a non-destructive metrology framework was developed and demonstrated.
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The goal of this project was to expand upon previously demonstrated single carbon nanotube devices by preparing a more practical, multi-single-walled carbon nanotube (SWNT) device. As a late-start, proof-of-concept project, the work focused on the fabrication and testing of chromophore-functionalized aligned SWNT field effect transistors (SWNT-FET). Such devices have not yet been demonstrated. The advantages of fabricating aligned SWNT devices include increased device cross-section to improve sensitivity to light, elimination of increased electrical resistance at nanotube junctions in random mat devices, and the ability to model device responses. The project did not achieve the goal of fabricating and testing chromophore-modified SWNT arrays, but a new SWNT growth capability was established that will benefit future projects. Although the ultimate goal of fabricating and testing chromophore-modified SWNT arrays was not achieved, the work did lead to a new carbon nanotube growth capability at Sandia/CA. The synthesis of dense arrays of horizontally aligned SWNTs is a developing area of research with significant potential for new discoveries. In particular, the ability to prepare arrays of carbon nanotubes of specific electronic types (metallic or semiconducting) could yield new classes of nanoscale devices.
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The integration of block-copolymers (BCPs) and nanoimprint lithography (NIL) presents a novel and cost-effective approach to achieving nanoscale patterning capabilities. The authors demonstrate the fabrication of a surface-enhanced Raman scattering device using templates created by the BCP-NIL integrated method. The method utilizes a poly(styrene-block-methyl methacrylate) cylindrical-forming diblock-copolymer as a masking material to create a Si template, which is then used to perform a thermal imprint of a poly(methyl methacrylate) (PMMA) layer on a Si substrate. Au with a Cr adhesion layer was evaporated onto the patterned PMMA and the subsequent lift-off resulted in an array of nanodots. Raman spectra collected for samples of R6G on Si substrates with and without patterned nanodots showed enhancement of peak intensities due to the presence of the nanodot array. The demonstrated BCP-NIL fabrication method shows promise for cost-effective nanoscale fabrication of plasmonic and nanoelectronic devices.