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Xi, Xiaoxing

Publications and source records attributed to Xi, Xiaoxing.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

MgB$_{2}$ Coating by HPCVD for 1.3-GHz Superconducting RF Cavities

While MgB 2 possesses promising material parameters for SRF cavities with higher Q, higher gradient, and higher operation temperatures than Nb cavities, such cavity properties have not been demonstrated using MgB 2 . As part of a continuing effort to fabricate MgB 2 -coated SRF cavities by hybrid physical chemical vapor deposition (HPCVD), we present here an HPCVD system design for coating the inside wall of 1.3-GHz copper cavities with MgB 2 . The cavity is heated using a pair of clamshell resistive heaters that directly contact the cavity body. Here, the new heater design is more compact and requires less power to reach the deposition temperature (~500°C for MgB 2 deposition on copper.) Preliminary test of MgB 2 films grown on small copper substrates, mounted at different locations on the cavity, shows T c of 28.4 ~ 34.3 K, measured by AC susceptibility.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Energy Frontier Research Centers: Center for the Computational Design of Functional Layered Materials (CCDM) August 1, 2014 - July 31, 2018; Center for Complex Materials from First Principles (CCM) August 1, 2018 - July 31, 2021 (Final Report)

The mission of the DOE Energy Frontier Research Centers CCDM (2014-2018) and CCM (2018-2021) was to theoretically develop, computationally apply, and experimentally validate electronic structure methods for all materials, with a focus on the complex materials, especially layered and two-dimensional materials, strongly-correlated materials, and liquid water. This was achieved by over 200 published journal articles authored by about 17 senior investigators from physics and chemistry and from theory, computation, and experiment, plus their collaborators. In particular, the Centers confirmed the predictive power of the SCAN (strongly constrained and appropriately normed) density functional, which was constructed to satisfy 17 known exact constraints and several appropriate norms. Without being fitted to real bonded systems, and at a modest computational cost, SCAN correctly predicted covalent, ionic, metallic, hydrogen, and van der Waals bonds in many challenging materials. SCAN gave an improved description of defects in semiconductors, surface properties of metals, seven phases of ice, liquid water, liquid and supercooled silicon, subtle structural distortions in ferroelectrics, formation energies and structural predictions for solids, and critical pressures for structural phase transitions. Perhaps most remarkably, SCAN correctly described some strongly-correlated materials that were previously believed to be beyond the reach of density-functional approximations. SCAN is the only density functional that correctly predicts the band gap closing under chemical doping of the cuprate high-temperature superconducting materials. SCAN also predicts a landscape of competing stripe and magnetic phases in the cuprates. For some materials with some codes, SCAN has convergence problems that are greatly reduced by the CCM-developed r 2 SCAN, without loss of accuracy or rigor. SCAN and r 2 SCAN still make some self-interaction error, which is greatly reduced by the CCDM/ CCM-developed local orbital scaling correction (LOSC). These Centers further proved that the fundamental energy gaps of a solid from an orbital energy difference and from total energy differences are the same for a large class of generalized Kohn-Sham (GKS) functionals, including SCAN and standard hybrid functionals, and that symmetry breaking arises when a dynamic density fluctuation drops to zero frequency. The Centers identified new mechanisms for catalysis in layered materials with ions intercalated between the layers, investigated charge density waves both in model systems and in real layered materials, studied changes of band gap with the number of layers, and explored topological ultrathin films, bent nanoribbons, and defects.

08 HYDROGEN↗
DOE OSTI2023

Ultrathin epitaxial MgB 2 on SiC: Substrate surface-polarity-dependent properties

High-quality, ultrathin superconducting films are required for advanced devices such as hot-electron bolometers, superconducting nanowire single-photon detectors, and quantum applications. Using hybrid physical-chemical vapor deposition, we show that MgB 2 films as thin as 4 nm can be fabricated on the carbon-terminated 6⁢H-SiC (0001) surface with a superconducting transition temperature above 33 K and a rms roughness of 0.7 nm. Remarkably, the film quality is a function of the SiC surface termination, with the C-terminated surface preferred to the Si-terminated surface. To understand the MgB 2 thin film/SiC substrate interactions giving rise to this difference, we characterized the interfacial structures using Rutherford backscattering spectroscopy/channeling, electron-energy-loss spectroscopy, and x-ray photoemission spectroscopy. The MgB 2 /SiC interface structure is complex and different for the two terminations. Both terminations incorporate substantial unintentional oxide layers influencing MgB 2 growth and morphology, but with a different extent, intermixing, and interface chemistry. In this paper, we report measurements of transport, resistivity, and the critical superconducting temperature of MgB 2 /SiC that are different for the two terminations, and they link interfacial structure variations to observed differences. The result shows that the C face of SiC is a preferred substrate for the deposition of ultrathin superconducting MgB 2 films.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Visualization of defect induced in-gap states in monolayer MoS 2

Atomic-scale intrinsic defects play a key role in controlling functional electronic properties of two-dimensional (2D) materials. Here, we present a low-temperature scanning–tunneling microscopy and spectroscopy investigation of a common point-defect in monolayer molybdenum disulfide (MoS 2 ). We employ a sample preparation method in which the film surface is never exposed to air so that the native dangling bonds surrounding the defects in the film are preserved. Molybdenum vacancies are identified by their three characteristic in-gap resonances by combining scanning–tunneling measurements with parallel Green’s function-based theoretical modeling. The relative energy shifts between the various in-gap states allow us to identify a relative charge difference between two of the observed vacancies. The role of the substrate on the band structure of the defective MoS 2 monolayer is unveiled. Our study highlights the effects of the substrate on the in-gap states of common defects found in MoS 2 providing a pathway in designing and optimizing 2D materials for electronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Spectroscopic study of the coupling effect between the two gaps of magnesium diboride on its RF properties

This program studied the two-gap nature of magnesium diboride and its possible effects on the superconducting rf properties of this material. Magnesium diboride (MgB 2 ) is a BCS superconductor with a superconducting critical temperature of 39 K, high critical current density and no weak link behavior across the grain boundary. These properties make this material ideal for both power applications and electronic devices. In particular, the high superconducting critical temperature and high thermodynamic field suggests that MgB 2 could be an ideal material also for superconducting radio frequency (SRF) cavities operating at a much higher temperature than Nb cavities and, therefore, reducing noticeably the cryogenics costs. However, MgB 2 is a two gap superconductor and it has been suggested that the RF properties are dominated by the smaller gap, which would make this material not competitive with Nb and especially Nb 3 Sn. The main problem does not seem to be the double-gap nature of this material but rather the weak-coupling of the two gaps that in the presence of an RF field suppresses superconductivity all together at fields much lower than the thermodynamic field. The main goal of this proposal is to address the fundamental question of the coupling between the two gaps in MgB 2 and understand if it is possible to control it and ultimately improve the RF performance of MgB 2 . The project studied these questions by measuring the density of states in the presence of an in-plane current and focused on the effect of controlled disorder. Disorder, indeed, provides an important knob to tune the properties of MgB2 and provides the possibility of changing the coupling between the two bands, making this material a competitive material for SRF applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Fabrication and Radio Frequency Properties of 3-GHz SRF Cavities Coated with MgB 2

Magnesium diboride (MgB 2 ) is considered a potential material for superconducting radio frequency cavities. MgB 2 coated Cu cavity will allow for a higher operational temperature than a bulk Nb cavity because of the higher transition temperature of MgB 2 and the high thermal conductivity of Cu. Using the hybrid physical chemical vapor deposition technique, MgB 2 coatings were successfully achieved on the inner wall of 3-GHz Cu cavities. The surface and superconducting properties of the coatings were characterized using small samples on Cu plugs mounted at different locations of mock cavities. RF measurement of a MgB 2 coated single-cell 3-GHz test cavity was carried out and it showed superconducting transition at 36 K. Here, the quality factor of this test cavity was lower than expected due to poor connectivity and inclusion of Mg-Cu alloy in the MgB 2 coating.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

The Effects of Atomic-Scale Strain Relaxation on the Electronic Properties of Monolayer MoS 2

The ability to control nanoscale electronic properties by introducing macroscopic strain is of critical importance for the implementation of 2D materials into flexible electronics and next generation strain engineering devices. In this work we correlate the atomic-scale lattice deformation with a systematic macroscopic bending of monolayer molybdenum disulfide films by using scanning tunneling microscopy and spectroscopy implemented with a custom-built sample holder to control the strain. Using this technique, we are able to induce strains of up to 3% before slipping effects take place and relaxation mechanisms prevail. We find a reduction of the quasiparticle bandgap of about 400 meV per percent local strain measured with a minimum gap of 1.2 eV. Furthermore, unintentional nanoscale strain relaxation of van der Waals monolayer sheets can negatively impact strain engineered device performance. In this paper, we investigate such strain relaxation mechanisms that include 1D ripples and 2D wrinkles which alter the spatial electronic density of states and strain distribution on the atomic-scale.

2-D Materials↗
DOE OSTI2019

Quantifying Wavelength-Dependent Plasmonic Hot Carrier Energy Distributions at Metal/Semiconductor Interfaces

Hot carriers generated from the nonradiative decay of localized surface plasmons are capable of driving charge-transfer reactions at the surfaces of metal nanostructures. Photocatalytic devices utilizing plasmonic hot carriers are often based on metal nanoparticle/semiconductor heterostructures owing to their efficient electron–hole separation ability. The rapid thermalization of hot carriers generated at the metal nanoparticles yields a distribution of carrier energies that determines the capability of the photocatalytic device to drive redox reactions. Here in this paper, we quantify the thermalized hot carrier energy distribution generated at Au/TiO 2 nanostructures using wavelength-dependent scanning electrochemical microscopy and a series of molecular probes with different redox potentials. We determine the quantum efficiencies and oxidizing power of the hot carriers from wavelength-dependent reaction rates and photocurrent across the metal/semiconductor interface. The wavelength-dependent reaction efficiency tracks the surface plasmon resonance spectrum of the Au nanoparticles, showing that the reaction is facilitated by plasmon excitation, while the responses from molecules with different redox potentials shed light on the energy distribution of the hot holes generated at metal nanoparticle/semiconductor heterostructures. The results provide important insight into the energies of the plasmon-generated hot carriers and quantum efficiencies of plasmonic photocatalytic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Magnesium Diboride thin Films, multilayers, and coatings for SRF cavities

Superconducting radio frequency (SRF) cavities currently use low-temperature superconductor niobium, and the Nb SRF cavities have approached the performance levels predicted theoretically. Compared to Nb, MgB 2 becomes superconducting at a much higher temperature and promises a better RF performance in terms of higher quality factor Q and higher acceleration capability. An MgB 2 SRF technology can significantly reduce the operating costs of particle accelerators when these potentials are realized. This project aimed to advance the development of an MgB 2 SRF technology. It had two main objectives: (1) materials issues of MgB 2 thin films and multilayers related to their applications in SRF cavities; and (2) coating single-cell cavities for testing at RF frequencies. The key technical thrust of the project is the deposition of high quality clean MgB 2 films and coatings by the hybrid physical-chemical vapor deposition (HPCVD) technique, which was developed in my group. We have achieved technical progress in each of the two areas. For the first objective, we have confirmed that MgB 2 thin film coatings can be used to effectively enhance the vortex penetration field of an SRF cavity. A vortex is a normal region in the shape of spaghetti that threads through a superconductor. Its existence is due to an applied magnetic field that is greater than a so-called lower critical field, H c1 . Once a vortex enters the superconductor, its movement leads to loss. This has been shown to be the reason for an SRF cavity to break down. Thus, enhancing the magnetic field for a vortex to enter the superconductor that forms the SRF cavity has be a goal of intense research. To this end, Gurevich proposed that a coating of thin superconductor layer can impede the vortex entrance. In this project, we have done two important experiment to test this concept. One, we showed that the enhancement of H c1 can be achieved by using in both epitaxial and polycrystalline MgB 2 films. Although H c1 is low for bulk MgB 2 samples, about 600 Oe at 5 K, it increases with decreasing film thickness, reaching 1880 Oe when the film thickness is 100 nm. Two, we coated Nb ellipsoids with MgB 2 films to achieve an “inverse cavity” configuration, mimicking the coating of an actual RF cavity. Our results demonstrate that it is indeed possible to increase the vortex penetration field of a cavity by a substantial amount (~600 Oe) by coating it with a thin MgB 2 film. For the second objective, we modified the existing HPCVD system to be able to coat a 3.9 GHz SRF cavity, and using a stainless steel mock cavity showed that a uniform film with good superconducting property can be grown across the cavity interior. Further, we successfully deposited MgB 2 on Cu disc. The two results combined demonstrate that it is possible to coat Cu cavities with high quality MgB 2 films using HPCVD. MgB 2 coated Cu could open up a possibility of using SRF cavities at 20–25 K with cryocoolers.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Enhancement of spin-lattice coupling in nanoengineered oxide films and heterostructures by laser MBE

The objective of the proposed research is to investigate nanoengineered oxide films and multilayer structures that are predicted to show desirable properties. The main focus of the project is an atomic layer-by-layer laser MBE (ALL-Laser MBE ) technique that is superior to the conventional laser MBE in broadening the conditions for the synthesis of high quality nanoscale oxides and new designer materials. In ALL-Laser MBE, separate oxide targets are used instead of one compound target in the conventional laser MBE. The targets are switched back and forth in front of a UV laser beam as they are alternately ablated. The oxide film is thus constructed one atomic layer at a time. The growth of each atomic layer is monitored and controlled by the reflection high energy electron diffraction (RHEED). The intensity of the diffraction spots increases or decreases depending on the chemistry of each atomic layer as well as the surface roughness. This allows us to determine whether the chemical ratio of the different elements in the films meets the desired value and whether each atomic layer is complete. ALL-Laser MBE is versatile: it works for non-polar film on non-polar substrate, polar film on polar substrate, and polar film on non-polar substrate. (In a polar material, each atomic layer is charged whereas in a non-polar material the atomic layers are charge neutral.) It allows one to push the thermodynamic boundary further in stabilizing new phases than reactive MBE and PLD, two of the most successful techniques for oxide thin films. For example, La 5 Ni 4 O 13 , the Ruddlesden-Popper phase with n = 4, has never been reported in the literature because it needs atomic layer-by-layer growth at high oxygen pressures, not possible with other growth techniques. ALL-Laser MBE makes it possible. We have studied the interfacial 2-dimensional electron gas in the LaAlO 3 /SrTiO 3 system, whose mechanism has been a subject of controversy. According to the most prevailing electronic reconstruction mechanism, a positive diverging electric potential is built up in the polar LaAlO 3 film when it is grown on a TiO 2 -terminated SrTiO 3 substrate, which is non-polar. This leads to the transfer of half of an electron from the LaAlO 3 film surface to SrTiO 3 when the LaAlO 3 layer is thicker than 4 unit cells, creating a 2D electron gas at the interface with a sheet carrier density of 3.3×10 14 /cm 2 for sufficiently thick LaAlO 3 . A serious inconsistency with this mechanism is that the carrier densities reported experimentally are invariably lower than the expected value. The most likely reason is that the SrTiO 3 substrate is oxygen difficient due to the low oxygen pressures (< 10 mTorr) during growth, and post-growth annealing in oxygen is often used to remove the oxygen vacancies. People cannot grow the LaAlO 3 film in higher oxygen pressures - it results in insulating samples or 3D island growth. Because we grow the LaAlO 3 film one atomic layer at a time, we were able to grow conducting LaAlO 3 /SrTiO 3 interfaces at a high oxygen pressure with ALL-Laser MBE, as high as 37 mTorr. The high oxygen pressure helps to prevent the possible oxygen reduction in SrTiO 3 , ensure that the LaAlO 3 films are sufficiently oxygenated. Measurements of x-ray linear dichroism (XLD) and x-ray magnetic circular dichroism (XMCD) both show that the spectra of our films are similar to those of well oxygenated samples. In the LaAlO 3 /SrTiO 3 interfaces grown by ALL-Laser MBE at 37 mTorr oxygen pressure, a quantitative agreement between our experimental result and the theoretical prediction was observed, which provides a strong support to the electronic reconstruction mechanism. The key differences between our result and the previous reports are the high oxygen pressure during the film growth and the high film crystallinity. The high oxygen pressure suppresses the likelihood of oxygen vacancies in SrTiO 3 . Well oxygenated samples produced during film growth can avoid possible defects when sufficient oxygen is provided only after the growth by annealing. Using ALL-Laser MBE, we also synthesized high-quality singlec-rystalline CaMnO 3 films. The systematic increase of the oxygen vacancy content in CaMnO 3 as a function of applied in-plane strain is observed and confirmed experimentally using high-resolution soft x-ray XAS and hard x-ray photoemission spectroscopy (HAXPES). The relevant defect states in the densities of states are identified and the vacancy content in the films quantified using the combination of first-principles theory and core-hole multiplet calculations with holistic fitting. The strain-induced oxygen-vacancy formation and ordering are a promising avenue for designing and controlling new functionalities in complex transition-metal oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Hybrid Physical Chemical Vapor Deposition of Magnesium Diboride Inside 3.9 GHz Mock Cavities

Magnesium diboride (MgB 2 ) is considered a candidate for the next generation superconducting radio frequency (SRF) cavities due to its higher critical temperature T c (40 K) and increased superheating field (H sh ) compared to other conventional superconductors. These properties can lead to reduced BCS surface resistance (R BCS S ) and residual resistance (R res ), according to theoretical studies, and enhanced accelerating field (E acc ) values. Here, we investigated the possibility of coating the inner surface of a 3.9 GHz SRF cavity with MgB 2 by using a hybrid physical-vapor deposition (HPCVD) system designed for this purpose. To simulate the actual 3.9 GHz SRF cavity, we also employed a stainless steel mock cavity for the study. The film qualities were characterized on small substrates that were placed at the selected positions within the cavity. MgB 2 films on stainless steel foils, niobium pieces, and SiC substrates showed transition temperatures in the range of 30-38 K with a c-axis-oriented crystallinity observed for films grown on SiC substrates. Dielectric resonator measurements at 18 GHz resulted in a quality factor of over 30 000 for the MgB 2 film grown on a SiC substrate. Furthermore, by employing the HPCVD technique, a uniform film was achieved across the cavity interior, demonstrating the feasibility of HPCVD for MgB 2 coatings for SRF cavities.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Epitaxial strain and its relaxation at the LaAlO{sub 3}/SrTiO{sub 3} interface

A series of LaAlO{sub 3} thin films with different thicknesses were deposited by pulsed laser deposition at temperatures from 720 °C to 800 °C. The results from grazing incidence x-ray diffraction and reciprocal space mapping indicate that a thin layer of LaAlO{sub 3} adjacent to the SrTiO{sub 3} substrate remains almost coherently strained to the substrate, while the top layer starts to relax quickly above a certain critical thickness, followed by a gradual relaxation at larger film thickness when they are grown at lower temperatures. The atomic force microscopy results show that the fast relaxation is accompanied by the formation of cracks on the film surface. This can be ascribed to the larger energy release rate when compared with the resistance of LaAlO{sub 3} to cracking, according to calculations from the Griffith fracture theory. For films grown at 720 °C, a drop in sheet resistance by two orders of magnitude is observed when the top layer starts to relax, indicating a relationship between the strain and the conductivity of the two-dimensional electron gas at the LaAlO{sub 3}/SrTiO{sub 3} interface. The strain engineered by growth temperature provides a useful tool for the manipulation of the electronic properties of oxide heterointerfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗