Engineering Papers⌕ Search

Engineering topics

Wu, Mingzhong

Publications and source records attributed to Wu, Mingzhong.

14 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Tunneling current-controlled spin states in few-layer van der Waals magnets

Abstract Effective control of magnetic phases in two-dimensional magnets would constitute crucial progress in spintronics, holding great potential for future computing technologies. Here, we report a new approach of leveraging tunneling current as a tool for controlling spin states in CrI 3 . We reveal that a tunneling current can deterministically switch between spin-parallel and spin-antiparallel states in few-layer CrI 3 , depending on the polarity and amplitude of the current. We propose a mechanism involving nonequilibrium spin accumulation in the graphene electrodes in contact with the CrI 3 layers. We further demonstrate tunneling current-tunable stochastic switching between multiple spin states of the CrI 3 tunnel devices, which goes beyond conventional bi-stable stochastic magnetic tunnel junctions and has not been documented in two-dimensional magnets. Our findings not only address the existing knowledge gap concerning the influence of tunneling currents in controlling the magnetism in two-dimensional magnets, but also unlock possibilities for energy-efficient probabilistic and neuromorphic computing.

Science & Technology - Other Topics↗
DOE OSTI2022

Large magnetoelectric resistance in the topological Dirac semimetal α-Sn

The spin-momentum locking of surface states in topological materials can produce a resistance that scales linearly with magnetic and electric fields. Such a bilinear magnetoelectric resistance (BMER) effect offers a new approach for information reading and field sensing applications, but the effects demonstrated so far are too weak or for low temperatures. This article reports the first observation of BMER effects in topological Dirac semimetals; the BMER responses were measured at room temperature and were substantially stronger than those reported previously. The experiments used topological Dirac semimetal α-Sn thin films grown on silicon substrates. The films showed BMER responses that are 10 6 times larger than previously measured at room temperature and are also larger than those previously obtained at low temperatures. These results represent a major advance toward realistic BMER applications. Significantly, the data also yield the first characterization of three-dimensional Fermi-level spin texture of topological surface states in α-Sn.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Noninvasive measurements of spin transport properties of an antiferromagnetic insulator

Antiferromagnetic insulators (AFIs) are of substantial interest because of their potential in the development of next-generation spintronic devices. One major effort in this emerging field is to harness AFIs for long-range spin information communication and storage. Here, we report a noninvasive method to optically access the intrinsic spin transport properties of an archetypical AFI α-Fe 2 O 3 via nitrogen-vacancy (NV) quantum spin sensors. By NV relaxometry measurements, we successfully detect the frequency-dependent dynamic fluctuations of the spin density of α-Fe 2 O 3 along the Néel order parameter, from which an intrinsic spin diffusion constant of α-Fe 2 O 3 is experimentally measured in the absence of external spin biases. Our results highlight the significant opportunity offered by NV centers in diagnosing the underlying spin transport properties in a broad range of high-frequency magnetic materials such as two-dimensional magnets, spin liquids, and magnetic Weyl semimetals, which are challenging to access by the conventional measurement techniques.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Switching of a Magnet by Spin-Orbit Torque from a Topological Dirac Semimetal

Recent experiments show that topological surface states (TSS) in topological insulators (TI) can be exploited to manipulate magnetic ordering in ferromagnets. In principle, TSS should also exist for other topological materials, but it remains unexplored as to whether such states can also be utilized to manipulate ferromagnets. In this paper, current-induced magnetization switching enabled by TSS in a non-TI topological material, namely, a topological Dirac semimetal α-Sn, is reported. The experiments use an α-Sn/Ag/CoFeB trilayer structure. The magnetization in the CoFeB layer can be switched by a charge current at room temperature, without an external magnetic field. The data show that the switching is driven by the TSS of the α-Sn layer, rather than spin-orbit coupling in the bulk of the α-Sn layer or current-produced heating. The switching efficiency is as high as in TI systems. This shows that the topological Dirac semimetal α-Sn is as promising as TI materials in terms of spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator

A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. Here, we report a genuine THE in a TI/MI structure that has only one magnetic phase. The structure shows a THE in the temperature range of T = 2–3 K and an AHE at T = 80–300 K. Over T = 3–80 K, the two effects coexist but show opposite temperature dependencies. Control measurements, calculations, and simulations together suggest that the observed THE originates from skyrmions, rather than the coexistence of two AHE responses. The skyrmions are formed due to a Dzyaloshinskii–Moriya interaction (DMI) at the interface; the DMI strength estimated is substantially higher than that in heavy metal-based systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Electrical control of coherent spin rotation of a single-spin qubit

Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. One of the critical challenges to develop NV-based quantum operation platforms results from the difficulty in locally addressing the quantum spin states of individual NV spins in a scalable, energy-efficient manner. Here, we report electrical control of the coherent spin rotation rate of a single-spin qubit in NV-magnet based hybrid quantum systems. By utilizing electrically generated spin currents, we are able to achieve efficient tuning of magnetic damping and the amplitude of the dipole fields generated by a micrometer-sized resonant magnet, enabling electrical control of the Rabi oscillation frequency of NV spins. Our results highlight the potential of NV centers in designing functional hybrid solid-state systems for next-generation quantum-information technologies. The demonstrated coupling between the NV centers and the propagating spin waves harbored by a magnetic insulator further points to the possibility to establish macroscale entanglement between distant spin qubits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator

We report here the modification of magnetism in a magnetic insulator Y 3 Fe 5 O 12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi 2 Se 3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the damping in Y 3 Fe 5 O 12 . Such TSS-induced changes become more pronounced as the temperature decreases from 300 to 50 K. These results suggest a completely new approach for control of magnetism in magnetic thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Spin transport in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer as a function of temperature

We present a study of the transport properties of thermally generated spin currents in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer over a wide range of temperature. Spin currents generated by the spin Seebeck effect (SSE) in a yttrium iron garnet (YIG) YIG/NiO/YIG trilayer on a gadolinium gallium garnet (GGG) substrate were detected using the inverse spin Hall effect (ISHE) in Pt. By studying samples with different NiO thicknesses, the spin diffusion length of NiO was determined to be ~3.8 nm at room temperature. Surprisingly, a large increase of the SSE signal was observed below 30 K, and the field dependence of the signal closely follows a Brillouin function for an S=7/2 spin. The increase of the SSE signal at low temperatures could thus be associated with the paramagnetic SSE from the GGG substrate. Besides, a broad peak in the SSE response was observed around 100 K. These observations are important in understanding the generation and transport properties of spin currents through magnetic insulators and the role of a paramagnetic substrate in spin current generation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Broadband Optical Detection Using the Spin Seebeck Effect

The generation, control, and detection of spin currents in solid-state devices are critical for Joule-heating minimization, spin-based computation, and electrical-energy generation from thermal gradients. Although incorporation of spin functionality into technologically important architectures is still in its infancy, advantages over all-electric devices are increasingly becoming clear. Here, we utilize the spin Seebeck effect (SSE) in Pt/Y 3 Fe 5 O 12 devices to detect light from 390 to 2200 nm. We find that the device responsivity is remarkably flat across this technologically important wavelength range, closely following the Pt absorption coefficient. As expected from a SSE-generation mechanism, we observe that the photovoltage and Pt heating dynamics are in strong agreement. To precisely determine the optically created thermal gradient produced from a pointlike heat source, we introduce a field-modulation method for measuring the SSE. Furthermore, our results show that broadband optical detection can be performed with devices based solely on spin-current generation and detection.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Magnetization switching using topological surface states

Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if the ferromagnet is conductive because it can completely suppress the TSSs, but it should be present if the ferromagnet is insulating. This study reports TSS-induced switching in a bilayer consisting of a topological insulator Bi 2 Se 3 and an insulating ferromagnet BaFe 12 O 19 . A charge current in Bi 2 Se 3 can switch the magnetization in BaFe 12 O 19 up and down. When the magnetization is switched by a field, a current in Bi 2 Se 3 can reduce the switching field by ~4000 Oe. The switching efficiency at 3 K is 300 times higher than at room temperature; it is ~30 times higher than in Pt/BaFe 12 O 19 . These strong effects originate from the presence of more pronounced TSSs at low temperatures due to enhanced surface conductivity and reduced bulk conductivity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Structure and basal twinning of topological insulator Bi 2 Se 3 grown by MBE onto crystalline Y 3 Fe 5 O 12

Whereas thin films of topological insulators grown by molecular beam epitaxy often display regular, triangular features, Bi 2 Se 3 films grown onto yttrium iron garnet (YIG) display much greater disorder. Here, we present observations of various types of disorder present in these films using atomic force microscopy and scanning transmission electron microscopy. Furthermore, the investigation reveals the presence of an amorphous metal oxide layer between the substrate and the film, which appears to smooth out the nanometer-scale undulations in the YIG surface. It also shows the existence of quasiordered arrays of heavy atoms in some interfacial regions, as well as rotations and tilting between adjacent grains and basal twinning at various heights in the film. Using density functional theory, we explore the impact of these prominent basal twins on the electronic structure of the film.

36 MATERIALS SCIENCE↗