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Woollam, J. A.

Publications and source records attributed to Woollam, J. A..

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Minority carrier diffusion length measurements - A review and comparison of techniques

A review of the major techniques for measuring minority carrier diffusion lengths in solar cells is given. Limits of applicability are indicated for each method, as relevant to indirect bandgap materials such as silicon, and direct bandgap materials like gallium arsenide. A discussion and bibliography is presented for the following techniques: uniform generation, electron beam induced current, Schottky barrier (and other steady-state) photocurrent, surface photovoltage, transient decay, and luminescence.

Khan, A. A.↗
NASA NTRS1982

Ellipsometric studies of sputtered silicon nitride on n-GaAs

Ellipsometry, which is the study of optical systems through their effect on polarized light, is a nondestructive technique offering extremely high sensitivity and in situ operation. One of the intriguing possibilities is to make use of the high sensitivity of ellipsometry for studying the very thin interface between an insulating film and a semiconductor substrate. Researchers have been especially interested in native or anodic oxides. In a recent study, Aspnes and Theeten used ellipsometry to study the interface between silicon and its thermally grown oxide, SiO2. These authors were able to conclude that the interface consisted of a 7 +/- 2 A graded region of atomically mixed silicon and oxygen. In this paper we report both analysis and experimental results for the system: sputtered silicon nitride on (100) n-type gallium arsenide.

Peng, Y. K.↗
NASA NTRS1981

Effective masses, relaxation times, and carrier mobilities in some chloride intercalants of graphite

The effective masses, carrier scattering times and carrier mobilities have been measured in selected graphite intercalation compounds using the Shubnikov-de Haas effect at a series of temperatures between 4 and 50 K. Effective masses are less than or equal to 0.1 of the free-electron mass, scattering times are about 10 to the -13th/s and carrier mobilities are on the order of 10,000 sq cm/V s.

Woollam, J. A.↗
NASA NTRS1980

Atomic hydrogen storage method and apparatus

Atomic hydrogen, for use as a fuel or as an explosive, is stored in the presence of a strong magnetic field in exfoliated layered compounds such as molybdenum disulfide or an elemental layer material such as graphite. The compounds maintained at liquid helium temperatures and the atomic hydrogen is collected on the surfaces of the layered compound which are exposed during delamination (exfoliation). The strong magnetic field and the low temperature combine to prevent the atoms of hydrogen from recombining to form molecules.

Woollam, J. A.↗
NASA NTRS1980

Apparatus for trapping and thermal detection of atomic hydrogen in high magnetic fields at low temperatures

An apparatus is described in which hydrogen atoms were trapped at temperatures down to 1.1 K in the 11 T field of a large volume superconducting magnet. A high sensitivity thermal detector was used to study trapping and recombination of atoms on the detector surface. The apparatus permits the application of extremely high steady state magnetic fields to study the potential effects of electron spin polarization on the stabilization of hydrogen atoms.

Woollam, J. A.↗
NASA NTRS1980

Critical currents in A-15 structure Nb3Al converted from cold-worked bcc structure

The paper considers critical currents in A-15 structure Nb3Al converted from a cold-worked bcc structure. Nb3Al prepared in the ductile phase by quenching and mechanical working followed by conversion to the A-15 structure could carry currents above 10 to the 9th power A/sq m in fields near 20 T. These critical currents are comparable to those of Nb3Ge and V3Ga which are closest competing materials for use in high fields; further enhancement of the critical current is possible if thermal treatments are optimized.

Woollam, J. A.↗
NASA NTRS1980

Atomic hydrogen storage

Atomic hydrogen, for use as a fuel or as an explosive, is stored in the presence of a strong magnetic field in exfoliated layered compounds such as molybdenum disulfide or an elemental layer material such as graphite. The compound is maintained at liquid temperatures and the atomic hydrogen is collected on the surfaces of the layered compound which are exposed during delamination (exfoliation). The strong magnetic field and the low temperature combine to prevent the atoms of hydrogen from recombining to form molecules.

Woollam, J. A.↗
NASA NTRS1979

Comparison of projected critical currents in PbMo6S8 and Nb3Ge

Critical current densities, Jc, of sputtered Chevrel phase PbMo6S8 films have been measured as a function of field to 19 T at several temperatures. The pinning forces were found to obey a scaling law. Assuming an effective upper critical field Bc2 = 45 T, an effective critical temperature Tc = 13 K, together with empirical estimates of numerical factors in the scaling law, the upper limits for critical current density Jc in PbMo6S8 are estimated. Comparisons are made with estimates of Jc for Nb3Ge at 4.2 K. A crossover of Jc vs. B is found for B of the order of 25 to 30 T. Below this point, Nb3Ge is projected to have a higher critical current density. Thus practical use of Chevrel materials in high field magnets only appears to be competitive with Nb3Ge for fields above 25 to 30 T.

Alterovitz, S. A.↗
NASA NTRS1979

Electronic properties of PbMo6S8 and CuxMo6S8

Normal-state properties of sputtered, evaporated, and sintered PbMo6S8 and CuxMo6S8 (where x is between 1.6 and 2.5) samples are reported. These include the temperature dependence of resistivity, magnetoresistance, and Hall effect. When combined with superconducting properties (measured on the same samples) and theory, a number of Fermi-surface and superconducting parameters are derived. Fits to the temperature dependence of the resistivity are compared with similar fits for A-15 structure superconductors.

Woollam, J. A.↗
NASA NTRS1979

Properties and performance of fine-filament bronze-process Nb3Sn conductors

Fine-filament bronze-process Nb3Sn superconductors were fabricated to fulfill stringent requirements on critical current under tension in a one-inch bend diameter, current density, stability, and conductor losses. A large fraction of niobium filaments was incorporated in a bronze matrix, and a cable containing 4453 2-micron diameter filaments in each of six strands provided a current density of 85,000 A/sq cm at 10 to the -11th ohm-cm, 10 T, and 4.2 K. The next step was to incorporate copper stabilizer in a conductor with 20,538 filaments. These conductors, fabricated so that bend strains of about 1% would be experienced by the filaments in the one-inch bend, stably carried currents in the 200-500 A range. A quench current of 540 A in a 5-cm bend corresponds to 158,000 A/sq cm in the bronze and filament area, believed to be the highest critical current density reported for multifilamentary Nb3Sn.

Walker, M. S.↗
NASA NTRS1978

Superconducting properties of evaporated copper molybdenum sulfide films

Films of copper molybdenum sulfide were produced by coevaporation. Those that were superconducting contained only the ternary compound and free molybdenum. The range of copper content in the ternary compound was as large as that in polycrystalline material, that is, it includes either phase alone, or a mixture of the two phases of this material. This is in contrast with sputtered materials where copper concentration has been limited to a narrower range. The upper critical field and the critical current were measured as functions of external magnetic field, and found to be similar to those of sputtered copper molybdenum sulfide, when the comparison was made for samples having the same amount of copper.

Woollam, J. A.↗
NASA NTRS1978

Improved apparatus for trapped radical and other studies down to 1.5 K

A Dewar system and associated equipment for electron paramagnetic resonance (EPR) studies of trapped free radicals and other optical or irradiation experiments are described. The apparatus is capable of reaching a temperature of 1.5 K and transporting on the order of 20 W per K temperature gradient; its principal advantages are for use at pumped cryogen temperatures and for experiments with large heat inputs. Two versions of the apparatus are discussed, one of which is designed for EPR in a rectangular cavity operating in a TE(102) mode and another in which EPR is performed in a cylindrical microwave cavity.

Woollam, J. A.↗
NASA NTRS1978

Hall effect and magnetoresistivity in the ternary molybdenum sulfides

The Hall coefficient and magnetoresistance of sputtered films of Cu(x)Mo6S8 and PbMo6S8 have been measured, as well as the magnetoresistance in sintered samples of the same materials. Assuming a single band model, net carrier densities and mean mobilities are determined

Woollam, J. A.↗
NASA NTRS1978

Critical currents in sputtered PbMo6S8

Critical currents in sputtered Chevrel-phase lead molybdenum sulfide have been measured at several temperatures as a function of applied magnetic field up to 19 T. A critical current density of approximately 50 million A/sq m was obtained at 15 T and 1.8 K, and the effective upper critical field was estimated to be 30 T. The pinning force at low fields was found to be dependent on the amount of free lead.

Alterovitz, S. A.↗
NASA NTRS1978

NMR relaxation rate and the libron energy of solid hydrogen

By taking the rotational relaxation of orthohydrogen (o-H2) in solid hydrogen into account, the authors have theoretically investigated the longitudinal NMR spin lattice relaxation rate of o-H2. The rate is characterized by an anomalous maximum, as a function of temperature, at temperatures close to the mean libron energy of o-H2. Application of the theory for o-H2 concentrations between 42% and 75% reveals a nearly concentration-independent mean libron energy equivalent to about 1 K. This qualitatively and quantitatively contradicts the conclusions of other theories, but agrees with recent experiments.

Sugawara, K.↗