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Wood, Charles

Publications and source records attributed to Wood, Charles.

22 records · Page 2

High temperature thermoelectric energy conversion

The theory and current status of materials research for high-temperature thermoelectric energy conversion are reviewed. Semiconductors are shown to be the preferred class of materials for this application. Optimization of the figure of merit of both broadband and narrow-band semiconductors is discussed as a function of temperature. Phonon scattering mechanisms are discussed, and basic material guidelines are given for reduction of thermal conductivity. Two general classes of materials show promise for high temperature figure of merit (Z) values, namely the rare earth chalcogenides and the boron-rich borides. The electronic transport properties of the rare earth chalcogenides are explicable on the basis of degenerate or partially degenerate n-type semiconductors. Boron and boron-rich borides exhibit p-type hopping conductivity, with detailed explanations proposed for the transport differing from compound to compound. Some discussion is presented on the reasons for the low thermal conductivities in these materials. Also, ZTs greater than one appear to have been realized at high temperature in many of these compounds.

Wood, Charles↗

Refractory semiconductors for high temperature thermoelectric energy conversion

Thermoelectric energy conversion utilizing nuclear heat sources has been employed for several decades to generate power for deep space probes. In the past, lead telluride and, more recently, silicon-germanium alloys have been the prime choices as thermoelectric materials for this application. Currently, a number of refractory semiconductors are under investigation at the Jet Propulsion Laboratory in order to produce power sources of higher conversion efficiency and, thus, lower mass per unit of power output. Included among these materials are improved Si-Ge alloys, rare earth compounds and boron-rich borides. The criteria used to select thermoelectric materials, in general, and the above materials, in particular, will be discussed. The current state of the art and the accomplishments to date in thermoelectric materials research will be reviewed.

Wood, Charles↗

Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

Vandersande, Jan W.↗

Properties of silicon-germanium thermoelectric alloys with additives

The paper reports the results of measurements (Seebeck and Hall coefficients, electrical resistivity, and thermal conductivity) on silicon-germanium (Si-20 at. pct Ge) alloy with boron phosphide, B(6.5)P) as an additive, prepared as described by McLane et al. (1986). The power factor (Seebeck coefficient squared divided by electrical resistivity) and the thermal conductivity of SeGe/B(6.5)P material were found to be lower than for the 'standard' SiGe (Si-22 at. pct Ge) material. However, no net improvement was achieved in the figure-of-merit of the sample tested. It is suggested that structural inhomogeneities, revealed by a SEM examination, might be responsible for this lack of improvement.

Mclane, George↗