Engineering topics

Witt, August F.

Publications and source records attributed to Witt, August F..

3 records

NASA NTRS1993

Characterization of convection related defects in II-VI compound semiconductors

The research carried out under NAG8-913, 'Characterization of Convection Related Defects in II-VI Compound Semiconductors', was aimed at exploration of the potential of axial magnetic fields for melt stabilization when applied in Bridgman geometry to the growth of HgMnTe. The thrust of the work was directed at the experimental establishment of the limits of magnetic melt stabilization during crystal growth and at the analytical verification of the effects of stabilization on critical materials properties. The data obtained indicate noticeable stabilization effects, particularly as far as the formation of microscopic compositional inhomogeneities is concerned. The effects of magnetic fields on precipitate formation are found to be minor. Magnetic field effects were investigated for both 'Bridgman' and 'travelling heater' geometries. The research was conducted during the period from May 22 to September 30, 1992.

Witt, August F.↗

NASA NTRS1992

Growth and characterization of binary and pseudo-binary 3-5 compounds exhibiting non-linear optical behavior. Undergraduate research opportunities in microgravity science and technology

In line with the specified objectives, a Bridgman-type growth configuration in which unavoidable end effects - conventionally leading to growth interface relocation - are compensated by commensurate input-power changes is developed; the growth rate on a microscale is predictable and unaffected by changes in heat transfer conditions. To permit quantitative characterization of the growth furnace cavity (hot-zone), a 3-D thermal field mapping technique, based on the thermal image, is being tested for temperatures up to 1100 C. Computational NIR absorption analysis was modified to now permit characterization of semi-insulating single crystals. Work on growth and characterization of bismuth-silicate was initiated. Growth of BSO (B12SiO20) for seed material by the Czochralski technique is currently in progress. Undergraduate research currently in progress includes: ground based measurements of the wetting behavior (contact angles) of semiconductor melts on substrates consisting of potential confinement materials for solidification experiments in a reduced gravity environment. Hardware modifications required for execution of the wetting experiments in a KC-135 facility are developed.

Witt, August F.↗

NASA NTRS1986

Apparatus for growing crystals

An improved apparatus and method for growing crystals from a melt employing a heat pipe, consisting of one or more sections, each section serving to control temperature and thermal gradients in the crystal as it forms inside the pipe.

Jasinski, Thomas J.↗