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Williams, W. D.

Publications and source records attributed to Williams, W. D..

High-Temperature RF Probe Station For Device Characterization Through 500 deg C and 50 GHz

A high-temperature measurement system capable of performing on-wafer microwave testing of semiconductor devices has been developed. This high temperature probe station can characterize active and passive devices and circuits at temperatures ranging from room temperature to above 500 C. The heating system uses a ceramic heater mounted on an insulating block of NASA shuttle tile material. The temperature is adjusted by a graphical computer interface and is controlled by the software-based feedback loop. The system is used with a Hewlett-Packard 8510C Network Analyzer to measure scattering parameters over a frequency range of 1 to 50 GHz. The microwave probes, cables, and inspection microscope are all shielded to protect from heat damage. The high temperature probe station has been successfully used to characterize gold transmission lines on silicon carbide at temperatures up to 540 C.

Schwartz, Zachary D.

Coupling Between CPW and Slotline Modes in Finite Ground CPW with Unequal Ground Plane Widths

The coupling between the desired CPW mode and the unwanted, slotline, mode is presented for finite ground coplanar waveguides with unequal ground plane widths. Measurements, quasi-static conformal mapping, and Method of Moment analysis are performed to determine the dependence of the slotline mode excitation on the physical dimensions of the FGC line and on the frequency range of operation. Introduction: Finite ground coplanar waveguide (FGC) is often used in low cost Monolithic Microwave Integrated Circuits (MMICs) because of its many advantages over microstrip and conventional CoPlanar Waveguide (CPW). It is uniplanar, which facilitates easy connection of series and shunt elements without via holes, supports a low loss, quasi-TEM mode over a wide frequency band, and since the ground planes are electrically and physically narrow, typically less than lambda/5 wide where lambda is the guided wavelength, they reduce the circuit size and the influence of higher order modes. However, they still support the parasitic slotline mode that plagues all CPW transmission lines.

Ponchak, George E.

A Low Cost Electrostatically Focused TWT

Ring-loop circuits are well known for their simplicity, low cost, compactness, low mass, high gain and efficiency and absence of backward wave oscillations. Peak powers over 20 kw have been achieved. They also have low harmonic output and excellent phase performance. We have developed a double ring-loop circuit that permits electrostatic focusing of an electron beam to at least 0.4 micro pervs. This eliminates the magnet stack and further lowers cost and weight. It permits glass rod fastening of circuit elements as well as gun and collector assemblies, as is done in cathode ray tubes. Using CRT construction techniques, the TWT can be built on automated equipment.

Vancil, Bernard K.

Folded Coplanar Waveguide Slot Antenna on Silicon Substrates With a Polyimide Interface Layer

A novel mm-wave Coplanar Waveguide (CPW) folded slot antenna is characterized on low-resistivity Si substrate (1 omega-cm) and a high resistivity Si substrate with a polyimide interface layer for the first time. The antenna resonates around 30 GHz with a return loss greater than 14.6 dB. Measured radiation patterns indicate the existence of a main lobe, but the radiation pattern is affected by a strong surface wave mode, which is greater in the high resistivity Si wafer.

Bacon, Andrew

A Low Cost Traveling Wave Tube for Wireless Communications

Demand for high data rate wireless communications is pushing up amplifier power, bandwidth and frequency requirements. Some systems are using vacuum electron devices again because solid-state power amplifiers are not able to efficiently meet the new requirements. The traveling wave tube is the VED of choice because of its excellent broadband capability as well as high power efficiency and frequency. But TWTs are very expensive on a per watt basis below about 200 watts of output power. We propose a new traveling wave tube that utilizes cathode ray tube construction technology and electrostatic focusing. We believe the tube can be built in quantity for under $1,000 each. We discuss several traveling wave tube slow wave circuits that lend themselves to the new construction. We will present modeling results and data on prototype devices.

Vancil, Bernard Kenneth

Higher Order Modulation Intersymbol Interference Caused by Traveling-wave Tube Amplifiers

For the first time, a time-dependent, physics-based computational model has been used to provide a direct description of the effects of the traveling wave tube amplifier (TWTA) on modulated digital signals. The TWT model comprehensively takes into account the effects of frequency dependent AM/AM and AM/PM conversion; gain and phase ripple; drive-induced oscillations; harmonic generation; intermodulation products; and backward waves, Thus, signal integrity can be investigated in the presence of these sources of potential distortion as a function of the physical geometry and operating characteristics of the high power amplifier and the operational digital signal. This method promises superior predictive fidelity compared to methods using TWT models based on swept-amplitude and/or swept-frequency data. First, the TWT model using the three dimensional (3D) electromagnetic code MAFIA is presented. Then, this comprehensive model is used to investigate approximations made in conventional TWT black-box models used in communication system level simulations, To quantitatively demonstrate the effects these approximations have on digital signal performance predictions, including intersymbol interference (ISI), the MAFIA results are compared to the system level analysis tool, Signal Processing, Workstation (SPW), using high order modulation schemes including 16 and 64-QAM.

Kory, Carol L.

Traveling-Wave Tube Amplifier Model to Predict High-Order Modulation Intersymbol Interference

Demands for increased data rates in satellite communications necessitate higher order modulation schemes, larger system bandwidth, and minimum distortion of the modulated signal as it is passed through the traveling wave tube amplifier (TWTA). One type of distortion that the TWTA contributes to is intersymbol interference (ISI), and this becomes particularly disruptive with wide-band, complex modulation schemes. It is suspected that in addition to the dispersion of the TWT, frequency dependent reflections due to mismatches within the TWT are a significant contributor to ISI. To experimentally investigate the effect of these mismatches within the physical TWT on ISI would be prohibitively expensive, as it would require manufacturing numerous amplifiers in addition to the acquisition of the required digital hardware. In an attempt to develop a more accurate model to correlate IS1 with the TWTA and the operational signal, a fully three-dimensional (3D), time-dependent, TWT interaction model has been developed using the electromagnetic particle-in-cell (PIC) code MAFIA (solution of Maxwell's equations by the Finite-Integration-Algorithm). The model includes a user defined slow-wave circuit with a spatially tapered region of loss to implement a sever, and spatially varied geometry (such as helical pitch) to implement a phase velocity taper. The model also includes user defined input/output coupling and an electron beam contained by solenoidal, electrostatic, or periodic permanent magnet (PPM) focusing allowing standard or novel TWTs to be investigated. This model comprehensively takes into account the effects of frequency dependent nonlinear distortions (MAM and AMPM); gain ripple due to frequency dependent reflections at the input/output coupling, severs, and mismatches from dynamic pitch variations; drive induced oscillations; harmonic generation; intermodulation products; and backward waves.

Kory, Carol L.

A High Efficiency, Miniaturized Ka Band Traveling Wave Tube Based on a Novel Finned Ladder RF Circuit Design

Space communications architectures are being planned to meet the high rate data distribution requirements of future NASA Enterprise missions. These will require the use of traveling wave tube amplifiers (TWTAs) to provide the high frequency, RF (radio frequency) power and efficiency needed for many of the communications links. A program addressing these requirements is currently underway at NASA Glenn Research Center (GRC) for the development of a high efficiency, 20 watt, 32 GHz TWT of reduced size and weight that is based on a novel high gain n circuit design, termed the 'finned ladder'.

Wintucky, E. G.

A Comparison of Three-Dimensional Simulations of Traveling-Wave Tube Cold-Test Characteristics Using CST MICROWAVE STUDIO and MAFIA

Previously, it was shown that MAFIA (solutions of Maxwell's equations by the Finite Integration Algorithm), a three-dimensional simulation code, can be used to produce accurate cold-test characteristics including frequency-phase dispersion, interaction impedance, and attenuation for traveling-wave tube (TWT) slow-wave structures. In an effort to improve user-friendliness and simulation time, a model was developed to compute the cold-test parameters using the electromagnetic field simulation software package CST MICROWAVE STUDIO (MWS). Cold-test parameters were calculated for several slow-wave circuits including a ferruled coupled-cavity, a folded waveguide, and a novel finned-ladder circuit using both MWS and MAFIA. Comparisons indicate that MWS provides more accurate cold-test data with significantly reduced simulation times. Both MAFIA and MWS are based on the finite integration (FI) method; however, MWS has several advantages over MAFIA. First, it has a Windows based interface for PC operation, making it very user-friendly, whereas MAFIA is UNIX based. MWS uses a new Perfect Boundary Approximation (PBA), which increases the accuracy of the simulations by avoiding stair step approximations associated with MAFIA's representation of structures. Finally, MWS includes a Visual Basic for Applications (VBA) compatible macro language that enables the simulation process to be automated and allows for the optimization of user-defined goal functions, such as interaction impedance.

Chevalier, C. T.

More About High-Temperature Resistance Strain Gauges

Two reports present additional information on electrical-resistance strain gauges described in "High-Temperature Resistance Strain Gauges" (LEW-15379). For protection against oxidation at high temperatures, gauges covered, by flame spraying, with coats of alumina containing up to 1 weight percent of yttria or, perferably, containing 4 to 6 weight percent of zirconia.

Englund, D. R.

Strain sensing technology for high temperature applications

This review paper discusses the status of strain sensing technology for high temperature applications. Technologies covered are those supported by NASA such as required for applications in hypersonic vehicles and engines, advanced subsonic engines, as well as material and structure development. The applications may be at temperatures of 540 C (1000 F) to temperatures in excess of 1400 C (2500 F). The most promising technologies at present are the resistance strain gage and remote sensing schemes. Resistance strain gages discussed include the BCL gage, the LaRC compensated gage, and the PdCr gage. Remote sensing schemes such as laser based speckle strain measurement, phase-shifting interferometry and X-ray extensometry will be discussed. Present status and limitations of these technologies are presented.

Williams, W. D.

Full-spectrum multiwavelength pyrometry for nongray surfaces

A full-spectrum (encompassing radiation on both sides of the Wien displacement peak) multiwavelength pyrometer was developed. It measures the surface temperature of arbitrary nongray ceramics by curve fitting a spectrum in this spectral region to a Planck function of temperature T. This function of T is modified by the surface spectral emissivity. The emissivity function was derived experimentally from additional spectra that were obtained by using an auxiliary radiation source and from application of Kirchhoff's law. This emissivity was verified by results that were obtained independently by using electromagnetic and solid-state theories. In the presence of interfering reflected radiation this general pyrometry improves the accuracy of the measured temperature by measuring an additional spectrum that characterizes the interfering radiation source.

Ng, Daniel

PdCr based high temperature static strain gage

The program at NASA Lewis Research Center to develop a high temperature static strain gage system for the hypersonic vehicle and turbine engine research has emphasized a palladium-13 wt pct chromium (PdCr) alloy. Gages made from this alloy are being developed in both fine wire and thin film form. The wire gage system had platinum wire as a temperature compensator and was coated with a special alumina and zirconia mixture overcoat. This PdCr compensated wire gage responded linearly to the imposed strain to at least 1000 microstrain. The apparent strain varied within 300 microstrain from room temperature to 800 C with a reproducibility within 50 microstrain between thermal cycles to 800 C. The sputtered thin film PdCr strain gage, whose size was 8 x 8 mm and 10 microns thick, has demonstrated the possibility of extending the use of the PdCr strain gage to a temperature of approximately 1000 C.

Lei, Jih-Fen

Plasma deposited silicon nitride for indium phosphide encapsulation

The composition and the annealing characteristics of plasma-deposited silicon-nitride encapsulating films on the ion-implanted InP substrates were investigated, using two different substrate-cleaning procedures (organic solvents and HF or HIO3 solutions) prior to encapsulation. The effect of plasma deposition of silicon nitride on the InP substrates was assessed through the current-voltage characteristics of Schottky diodes. Results of XPS analyses showed that the cleaning procedure that employed HF solution left less oxygen on the InP surface than the procedure involving HIO3. No chemical interaction between the film and the substrate was observed before or after annealing.

Valco, G. J.

Rapid thermal annealing of indium phosphide compound semiconductors

The rapid thermal annealing (RTA) of indium phosphide (InP) substrates using a proximity contact method and silicon nitride encapsulation is investigated. The surface conditions of the InP substrates following cleaning with procedures A and B are analyzed. Procedure A involves using an iodic acid solution to remove work-damage InP surface layers and B is a degasssing process and hydrofluoric acid solution for native oxide removal. AES, XPS, and SIMS data of the proximity contact and silicon nitride encapsulated annealed samples are examined. The data reveal that RTA using proximity contact with silicon wafers does not provide adequate protection; however, the InP sample is successfully annealed when protected by a silicon nitride encapsulant.

Biedenbender, Michael D.

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

Leon, R. P.