Engineering topics
Publications and source records attributed to Will, H. A..
Program provides extrapolation calculations of high gas temperature based on theoretical heating curve of pulsed thermocouples. Program requires as input mach number, wall temperature, and total pressure in addition to thermocouple data. Tests indicate program extrapolates reasonably-accurate gas temperatures from pulsed-thermocouple data.
A reproducible process is described for growing a thick single-crystal layer of cubic SiC on a single-crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34 microns thick and several sq cm in area have been grown. Wafers are obtained by chemically removing the Si substrates from the grown layers. Excellent electron channeling patterns produced by these wafers indicate very good crystal quality. Preliminary electrical measurements have yielded electron mobilities up to 380 sq cm/Vs.
A pulsed thermocouple was used for measuring gas temperatures above the melting point of common thermocouples. This was done by allowing the thermocouple to heat until it approaches its melting point and then turning on the protective cooling gas. This method required a computer to extrapolate the thermocouple data to the higher gas temperatures. A method that includes the effect of radiation in the extrapolation is described. Computations of gas temperature are provided, along with the estimate of the final thermocouple wire temperature. Results from tests on high temperature combustor research rigs are presented.
Usually to aline optics safely, low power laser which can safely operated without safety goggles is substituted for higher power laser during alinement procedure. Need for lower power substitute laser can be eliminated by painting target area with commercial paint which fluoresces strongly in red or yellow portion of spectrum when excited by argon laser beam.
Thermocouple probe incorporates small jet of inert gas to cool thermocouple. To measure gas temperatures, cooling jet is turned off momentarily, allowing thermocouple to heat up to near its melting point, then cooling is reapplied. Heating curve is recorded by high speed digital system. Computing system extrapolates final temperature thermocouple would have attained.
Pulsed thermocouple systems can be used to measure gas temperatures above the melting point of the thermocouple by various techniques of short term of intermittent exposure of the thermocouple operating at lower temperatures. An approach is described which uses a thermocouple cooled by a small jet of inert gas. When a measurement is to be made, the cooling jet is turned off and the thermocouple allowed to heat up to near its melting point, at which time the cooling is reapplied. The final temperature which the thermocouple should have attained is then calculated by extrapolating an exponential curve fit to the data. Temperature measurements can be recorded and displayed in near real time by using modern high-speed computing systems to perform these calculations. Examples of the technique applied to high temperature jet engine combustor development are presented.
Pulsed thermocouple systems can be used to measure gas temperatures above the melting point of the thermocouple by various techniques of short term or intermittent exposure of the thermocouple operating at lower temperatures. This paper describes an approach which uses a thermocouple cooled by a small jet of inert gas. When a measurement is to be made, the cooling jet is turned off and the thermocouple allowed to heat up to near its melting point, at which time the cooling is reapplied. The final temperature which the thermocouple should have attained is then calculated by extrapolating an exponential curve fit to the data. Temperature measurements can be recorded and displayed in near real time by using modern high-speed computing systems to perform these calculations. Examples of the technique applied to high temperature jet engine combustor development are presented.
Process of growing expitaxial silicon carbide (SiC) layers on SiC substrates so that epitaxial growth is perpendicular to c-axis by chemical vapor deposition process at temperatures of 1590 to 1660 K minimizes variations in stacking sequence and problems associated with high temperatures.
Voids forming at interface when copper is cast onto tungsten can be eliminated by adding wetting agent during casting process. Small amount of copper and nickel are cast onto thoriated tungsten insert, insert is recast with more copper to form electrode. Good thermal conductance results in long-lived cathode.
High-quality epitaxial layers of 6H SiC have been grown on 6H SiC substrates with the grown direction perpendicular to the crystal c-axis. The growth was by chemical vapor deposition from methyltrichlorosilane (CH3SiCl3) in hydrogen at temperatures in the range of 1320 to 1390 C. Epitaxial layers up to 80 microns thick were grown at rates of 0.4 microns/min. Attempts at growth on the (0001) plane of 6H SiC substrates under similar conditions resulted in polycrystalline cubic SiC layers. Optical and X-ray diffraction techniques were used to characterize the grown layers.
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A method for making 400-kW arc lamp cathodes is described. The cathodes are made by casting a 1.75-in. diameter copper body onto a thoriated tungsten insert. The addition of 0.5-percent nickel to the copper prevents voids from forming at the copper-tungsten interface. Cathodes made by this process have withstood more than 110 hours of operation in a 400-kW arc lamp.
Study of the phase transformations taking place in 2H SiC single crystals at temperatures as low as 400 C. Some crystals transformed to a structure with one-dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6H structure. The transformation is time and temperature dependent, and is greatly enhanced by dislocations. The transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid-state transformation above 1400 C.
Single crystals of 2H SiC were observed to undergo phase transformations at temperatures as low as 400 C. Some 2H crystals transformed to a structure with one-dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6H structure. The transformation is time and temperature dependent and is greatly enhanced by dislocations. Observations indicate that the transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid state transformation above 1400 C.