Engineering topics

Whitson, D. W.

Publications and source records attributed to Whitson, D. W..

4 records

NASA NTRS1985

Double-injection, deep-impurity switch development

The overall objective of this program was the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI) sup 2 silicon switch that operates in the 2-10 kV range with conduction current values of 5 A at 2 kV and 1 A at 10 kV. Other major specifications include a holding voltage of 10 V with no gate current, 10 microsec switching time, and power dissipation of 50 W at 75 C. It was decided to concentrate on the lateral circular devices in order to optimize the gold diffusion. This resulted in devices that are much better switches (approx.1 micro sec switching time), and in a gold diffusion process that is much more controllable than those previously developed. Some results with injection-gated devices were also obtained. The current conduction for V less than VT was analyzed and seen to agree, for the most part, with Lampert's theory. Various sections of this report describe the device designs, wafer-processing techniques, and various measurements which include ac and dc characteristics and four-point probe.

Whitson, D. W.↗

NASA NTRS1983

Double-injection, deep-impurity switch development

The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.

Selim, F. A.↗

NASA NTRS1975

The prevention of electrical breakdown and electrostatic voltage problems in the space shuttle and its payloads. Part 1: Theory and phenomena

An introduction to the theory of corona discharge and electrostatic phenomena is presented. The theory is mainly qualitative so that workers in the field should not have to go outside this manual for an understanding of the relevant phenomena. Some of the problems that may occur with the space shuttle in regard to electrical discharge are discussed.

Whitson, D. W.↗

NASA NTRS1975

The prevention of electronical breakdown and electrostatic voltage problems in the space shuttle and its payloads. Part 2: Design guides and operations considerations

The specific electrical discharge problems that can directly affect the shuttle vehicle and its payloads are addressed. General design guidelines are provided to assist flight hardware managers in minimizing these kinds of problems. Specific data are included on workmanship practices and system testing while in low pressure environments. Certain electrical discharge problems that may be unique to the design of the shuttle vehicle itself and to its various mission operational models are discussed.

Whitson, D. W.↗