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White, C. W.

Publications and source records attributed to White, C. W..

Au Colloids Formed by Ion Implantation in Muscovite Mica Studied by Vibrational and Electronic Spectroscopes and Atomic Force Microscopy

Au was implanted into the (001) surface of Muscovite mica at an energy of 1.1 MeV and at doses of 1, 3, 6, and 10 x 10(exp 16) ions/cu cm. Optical spectra of the as-implanted samples revealed a peak at 2.28 eV (545 nm) which is attributed to the surface plasmon absorption of Au colloids. The infrared reflectance measurements show a decreasing reflectivity with increasing ion dose in the Si-O stretching region (900-1200 /cm). A new peak observed at 967 /cm increases with the ion dose and is assigned to an Si-O dangling bond. Atomic force microscopy images of freshly cleaved samples implanted with 6 and 10 x 10(exp 16) ions/sq cm indicated metal colloids with diameters between 0.9- 1.5 nm. AFM images of the annealed samples showed irregularly shaped structures with a topology that results from the fusion of smaller colloids.

Tung, Y. S.

Annealing Effects on the Surface Plasmon of MgO Implanted with Gold

Gold ion implantation was carried out with the energy of 1.1 MeV into (100) oriented MgO single crystal. Implanted doses are 1, 3, 6, 10 x 10(exp 16) ions/sq cm. The gold irradiation results in the formation of gold ion implanted layer with a thickness of 0.2 microns and defect formation. In order to form gold colloids from the as-implanted samples, we annealed the gold implanted MgO samples in three kinds of atmospheres: (1)Ar only, (2)H2 and Ar, and (3)O2 and Ar. The annealing over 1200 C enhanced the gold colloid formation which shows surface plasmon resonance band of gold. The surface plasmon bands of samples annealed in three kinds of atmospheres were found to be at 535 nm (Ar only), 524 nm(H2+Ar), and 560 nm (02+Ar), The band positions of surface plasmon can be reversibly changed by an additional annealing.

Ueda, A.

Electronic and Vibrational Spectra of InP Quantum Dots Formed by Sequential Ion Implantation

We have performed sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing to fabricate InP quantum dots in a dielectric host. Electronic and vibrational spectra were measured for the as-implanted and annealed samples. The annealed samples show a peak in the infrared spectra near 320/cm which is attributed to a surface phonon mode and is in good agreement with the value calculated from Frolich's theory of surface phonon polaritons. The electronic spectra show the development of a band near 390 nm that is attributed to quantum confined InP.

Hall, C.

Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon

The nucleation and growth of diamond crystals on single-crystal copper surfaces implanted with carbon ions is studied. Microwave plasma-enhanced chemical-vapor deposition is used for diamond growth. The single-crystal copper substrates were implanted either at room or elevated temperature with carbon ions prior to diamond nucleation. This procedure leads to the formation of a graphite film on the copper surface which greatly enhances diamond crystallite nucleation. A simple lattice model is constructed for diamond growth on graphite as 111 line (diamond) parallel to 0001 line (graphite) and 110 line (diamond) parallel to 1 1 -2 0 (graphite).

Ong, T. P.

A 1 MW, 100 kV, less than 100 kg space based dc-dc power converter

A 1 MW dc-dc power converter has been designed which has an input voltage of 5 kV +/-3 percent, an output voltage of 100 kV +/- 0.25 percent, and a run time of 1000 s at full power. The estimated system mass is 83.8 kg, giving a power density of 11.9 kW/kg. The system exceeded the weight goal of 10 kW/kg through the use of innovative components and system concepts. The system volume is approximately 0.1 cu m, and the overall system efficiency is estimated to be 87 percent. Some of the unique system features include a 50-kHz H-bridge inverter using MOS-controlled thyristors as the switching devices, a resonance transformer to step up the voltage, open-cycle cryogenic hydrogen gas cooling, and a nonrigid, inflatable housing which provides on-demand pressurization of the power converter local environment. This system scales very well to higher output powers. The weight of the 10-MW system with the same input and output voltage requirements and overall system configuration is estimated to be 575.3 kg. This gives a power density of 17.4 kW/kg, significantly higher than the 11.9 kW/kg estimated at 1 MW.

Cooper, J. R.

High-Frequency, High-Power Capacitor

Capacitor increases efficiency of high-frequency circuits. High-powercapacitor design uses split foil and floating foil plus multiple coils to reduce voltage drop across film and increases lifetime (10 years). Capacitor reliably operates at high frequency in environments normally not hospitable to electronic components.

White, C. W.

Nonequilibrium Crystal Growth During Laser Annealing of Silicon

The Systematic studies of dopant (Group III, IV, or V) incorporation into silicon as a result of pulsed-laser annealing are reviewed. At low concentrations, dopant profiles measured after laser annealing can be compared to model calculations for redistribution by liquid-phase diffusion in order to determine the interfacial distribution coefficient K('). At high concentrations there is a limit (C sub s) to dopant incorporation into substitutional lattice sites. The mechanisms which limit dopant incorporation are discussed as well as the dependence of K(') and (max) on crystal orientation. Finally, measurements of interface temperatures, temperature profiles, and thermal gradients during rapid solidification are summarized.

White, C. W.

High frequency, high power capacitor development

A program to develop a special high energy density, high power transfer capacitor to operate at frequency of 40 kHz, 600 V rms at 125 A rms plus 600 V dc bias for space operation. The program included material evaluation and selection, a capacitor design was prepared, a thermal analysis performed on the design. Fifty capacitors were manufactured for testing at 10 kHz and 40 kHz for 50 hours at Industrial Electric Heating Co. of Columbus, Ohio. The vacuum endurance test used on environmental chamber and temperature plate furnished by Maxwell. The capacitors were energized with a special power conditioning apparatus developed by Industrial Electric Heating Co. Temperature conditions of the capacitors were monitored by IEHCo test equipment. Successful completion of the vacuum endurance test series confirmed achievement of the main goal of producing a capacitor or reliable operation at high frequency in an environment normally not hospitable to electrical and electronic components. The capacitor developed compared to a typical commercial capacitor at the 40 kHz level represents a decrease in size and weight by a factor of seven.

White, C. W.

An approximate solution to improve computational efficiency of impedance-type payload load prediction

The computational efficiency of the impedance type loads prediction method was studied. Three goals were addressed: devise a method to make the impedance method operate more efficiently in the computer; assess the accuracy and convenience of the method for determining the effect of design changes; and investigate the use of the method to identify design changes for reduction of payload loads. The method is suitable for calculation of dynamic response in either the frequency or time domain. It is concluded that: the choice of an orthogonal coordinate system will allow the impedance method to operate more efficiently in the computer; the approximate mode impedance technique is adequate for determining the effect of design changes, and is applicable for both statically determinate and statically indeterminate payload attachments; and beneficial design changes to reduce payload loads can be identified by the combined application of impedance techniques and energy distribution review techniques.

White, C. W.

Laser Techniques in Photovoltaic Research

High-power laser pulses were used to replace the conventional high temperature furnace processing for the p-n junction formation step in high speed, low cost solar cell fabrication. Three different approaches to junction formation were tested: (1) laser annealing of ion-implanted Si in which laser radiation is used to remove the radiation damage and to recover the electrical activity in the implanted layer; (2) a process in which a thin film of dopant is first deposited on the substrate and then incorporated into the near-surface region by laser-induced diffusion; and (3) a process in which a heavily doped amorphous silicon layer is deposited on the Si substrate and epitaxially regrown from the melted substrate layer by laser radiation. All three methods were found to provide suitable candidates for high efficiency Si solar cells.

Young, R. T.

Effect of elimination of nitrogen and/or hypoxia or restricted visual environment on color vision and range of accommodation

The effects upon range of accommodation and color vision of reduced atmospheric pressure, at partial and complete elimination of nitrogen, of hypoxia, and of exposure for varying periods of time to restricted visual environment, have been studied alone or in various combinations. Measurements were made on the electroretinogram, the electrooculogram, and the diameter of the retinal vessels as an indicator of blood flow to the retina at the time of total elimination of nitrogen. An objective method was used to test range of accommodation. In the color vision test the flicker colors of a Benham's top were matched with a colorimeter.

Wolbarsht, M. L.