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Wells, Mary

Publications and source records attributed to Wells, Mary.

100-GHz Phase Switch/Mixer Containing a Slot-Line Transition

A circuit that can function as a phase switch, frequency mixer, or frequency multiplier operates over a broad frequency range in the vicinity of 100 GHz. Among the most notable features of this circuit is a grounded uniplanar transition (in effect, a balun) between a slot line and one of two coplanar waveguides (CPWs). The design of this circuit is well suited to integration of the circuit into a microwave monolithic integrated circuit (MMIC) package. One CPW is located at the input end and one at the output end of the top side of a substrate on which the circuit is fabricated (see Figure 1). The input CPW feeds the input signal to antiparallel flip-chip Schottky diodes connected to the edges of the slot line. Phase switching is effected by the combination of (1) the abrupt transition from the input CPW to the slot line and (2) CPW ground tuning effected by switching of the bias on the diodes. Grounding of the slot metal to the bottom metal gives rise to a frequency cutoff in the slot. This cutoff is valuable for separating different frequency components when the circuit is used as a mixer or multiplier. Proceeding along the slot line toward the output end, one encounters the aforementioned transition, which couples the slot line to the output CPW. Impedance tuning of the transition is accomplished by use of a high-impedance section immediately before the transition.

Gaier, Todd

MMIC Amplifier Produces Gain of 10 dB at 235 GHz

The first solid-state amplifier capable of producing gain at a frequency >215 GHz has been demonstrated. This amplifier was fabricated as a monolithic microwave integrated-circuit (MMIC) chip containing InP high-electron-mobility transistors (HEMTs) of 0.07 micron gate length on a 50- m-thick InP substrate.

Dawson, Douglas

High-Performance Solid-State W-Band Power Amplifiers

The figure shows one of four solid-state power amplifiers, each capable of generating an output power greater than or equal to 240 mW over one of four overlapping frequency bands from 71 to 106 GHz. (The bands are 71 to 84, 80 to 92, 88 to 99, and 89 to 106 GHz.) The amplifiers are designed for optimum performance at a temperature of 130 K. These amplifiers were developed specifically for incorporation into frequency-multiplier chains in local oscillators in a low-noise, far-infrared receiving instrument to be launched into outer space to make astrophysical observations. The designs of these amplifiers may also be of interest to designers and manufacturers of terrestrial W-band communication and radar systems. Each amplifier includes a set of six high-electron-mobility transistor (HEMT) GaAs monolithic microwave integrated-circuit (MMIC) chips, microstrip cavities, and other components packaged in a housing made from A-40 silicon-aluminum alloy. This alloy was chosen because, for the original intended spacecraft application, it offers an acceptable compromise among the partially competing requirements for high thermal conductivity, low mass, and low thermal expansion. Problems that were solved in designing the amplifiers included designing connectors and packages to fit the available space; designing microstrip signal-power splitters and combiners; matching of impedances across the frequency bands; matching of the electrical characteristics of those chips installed in parallel power-combining arms; control and levelling of output power across the bands; and designing the MMICs, microstrips, and microstrip cavities to suppress tendencies toward oscillation in several modes, both inside and outside the desired frequency bands.

Gaier, Todd