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Wang, Gwo-Ching

Publications and source records attributed to Wang, Gwo-Ching.

12 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Near surface structure of ultrathin epitaxial Ru films on graphene/amorphous SiO 2 revealed by azimuthal RHEED

Ru has been considered as an alternative metallic candidate for future local interconnects. The 2D reciprocal space map constructed from the azimuthal reflection high-energy electron diffraction patterns reveals that ultrathin Ru(0001) is epitaxially grown on transferred graphene on amorphous SiO 2 through quasi-van der Waals interaction. The in-plane and out-of-plane lattice constants are measured from streaks’ separation and intensity modulations along streaks, respectively. Weak and broad rings indicate that a low density of nanoscale polycrystals exist on the surface. In this work, The intensities of 00 and non-00 diffraction spots vs. azimuthal angles in the 2D map show a few degrees out-of-plane and in-plane angular misorientations among grains, respectively. As the film thickness decreases these angular misorientations increase. Transmission electron microscopy carried out in this study also provides precise values of lattice constant and sub-grain sizes in the films. These findings show that ultrathin Ru film is epitaxial but not exactly single crystalline.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ultrathin Ruthenium Films on Graphene Buffered SiO 2 via Quasi Van der Waals Epitaxy

In this study, we demonstrate a quasi van der Waals epitaxy approach to prepare single crystalline Ru ultrathin film on large scale, monolayer graphene. Physical and epitaxial properties of bulk, near surface and surface of ultrathin Ru films were comprehensively studied using various structural, morphological, compositional, and electrical characterization techniques. Here, we confirm that Ru can epitaxially grow on single, monolayer graphene using magnetron sputtering at elevated temperature of 600 °C. The epitaxial Ru films with film thickness ranging from 94.2 nm down to 3.9 nm show the (0001) out-of-plane orientation. The epitaxial relationships between Ru and graphene are out-of-plane Ru(0001) || graphene(0001) and in-plane Ru[$11\bar20$] || graphene[$11\bar20$]. All the Ru films show smooth surfaces with root-mean-square roughness less than 0.8 nm and have negligible oxide layer on the surfaces. The Ru films on graphene demonstrate significantly reduced electrical resistivity comparing to their counterpart grown on bare SiO 2 , which show polycrystalline nature. For 7.1 to 3.9 nm film thicknesses, the resistivity of Ru on graphene shows 38 to 45% resistivity decrease from that of Ru film on bare SiO 2 without graphene. Our observations suggest the existence of the above-classical van der Waals interaction between Ru and graphene. On the other hand, graphene is capable of effectively blocking the inter-diffusion/interaction between Ru and SiO 2 during a 1000 °C annealing process.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Surface and interface structures of epitaxial Sb 2 Se 3 on mica

Sb 2 Se 3 thin film is an emerging photon absorber used in solar cells. We report the study of surface and interface structures of Sb2Se3(1 2 0) film grown on mica substrate by a high-rate vapor transport method. The interface epitaxial relationship between Sb 2 Se 3 and mica examined by the cross- sectional TEM images and diffraction patterns along the [0 0 1] and [10] directions of Sb 2 Se 3 reveal a rectangular structure with lengths of 4.03 ± 0.1 Å and 5.29 ± 0.1 Å, consistent with the [1 2 0] out-of-plane direction of Sb 2 Se 3 bulk lattice parameters. In contrast, the two-dimensional reciprocal space map (2D map) constructed from azimuthal reflection high-energy electron diffraction (ARHEED) patterns from the surface exhibits a decorated hexagonal structure. This surface structure emerges from six epitaxial orientation domains/rods and each domain has a rectangular unit mesh of 3.94 ± 0.09 Å and 26.95 ± 1.16 Å along the [0 0 1] and [10] directions. The 26.95 Å is consistent with the unit mesh of the outermost layer of the Sb 2 Se 3 (1 2 0) domains/rods. Overall, our 2D map reveals surface information that are not easily observed by other diffraction techniques.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Voltage-Dependent Barrier Height of Electron Transport through Iron Porphyrin Molecular Junctions

Electron transport through iron porphyrin (FeP) molecules self-assembled on a gold (Au) substrate was investigated using conductive atomic force microscopy (AFM) to measure current–voltage (I–V) characteristics. In the direct tunneling region (|V| ≤ 0.1 V), the Simmons model was used to characterize the electron transport. Furthermore, the energy barrier between the Fermi energy level of Au and the highest occupied molecular orbital (HOMO) level of the FeP molecule was determined to be between 0.3 and 0.6 eV; the range of the electron attenuation coefficient was 0.6–0.8 Å–1. Instead of a constant barrier height, a voltage-dependent barrier height was adapted to simulate the experimental I–V curves over the entire voltage range (|V| ≤ 2 V) using the Simmons model for the intermediate case. The voltage-dependent barrier height is supported by a previously predicted response of molecular-projected self-consistent Hamiltonian orbitals. The dependence showed that the HOMO level relative to the Fermi energy level of the Au electrode decreased as the bias voltage increased. To verify the deposition of the FeP on the Au substrate, Raman spectroscopy and AFM analysis were performed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Enhanced hydrogen storage by a variable temperature process

We present a simple method of variable temperature process that can potentially enhance the hydrogen storage properties of a large variety of solid state materials. In this approach, hydrogen gas is first introduced at about room temperature, which is followed by a gradual increase to a preset maximum temperature value, T max . Using this approach, we investigated hydrogen absorption properties of vertically aligned arrays of magnesium nanotrees and nanoblades fabricated by glancing angle deposition (GLAD) technique, and conventional Mg thin film. Weight percentage (wt%) storage values were measured by quartz crystal microbalance (QCM). After exposing Mg samples to H 2 at 30 bar and 30 °C, dynamic absorption measurements were conducted as the temperature was increased from 30 °C to maximum values of T max = 100, 200, and 300 °C all within 150 min. QCM measurements revealed that variable temperature method results in significant improvements in hydrogen storage values over the ones obtained by conventional constant temperature process. At a low effective temperature T eff = 165 °C (T max = 300 °C), we achieved storage values of 6.19, 4.76, and 2.79 wt% for Mg nanotrees, nanoblades, and thin film, respectively.

08 HYDROGEN↗
DOE OSTI2018

Growth of epitaxial CdTe thin films on amorphous substrates using single crystal graphene buffer

Traditionally, a high-quality CdTe film can only be grown on a single crystal substrate with a small lattice mismatch. We report the epitaxy of CdTe films on monolayer single crystal graphene buffered amorphous SiO 2 /Si(100) substrates, despite a 86% lattice mismatch between CdTe(111) and graphene. X-ray pole figure, electron backscatter diffraction mapping and transmission electron microscopy all confirm that the epitaxial CdTe films are composed of two domains: the primary and the Σ3 twin. The crystal quality of films is shown to improve as the post-deposition annealing temperature increases. However, the rotational misalignment in CdTe remains large even after annealing. Through density functional theory calculations on the charge transfer distribution at the interface of CdTe and graphene, it is found that the interface is dominated by the weak van der Waals interaction, which explains the large spread of in-plane orientation in CdTe films. Furthermore, the rotational misalignment in graphene itself is also confirmed to produce the large in-plane orientation spread in CdTe films. Although imperfect in epitaxy quality, this work demonstrates that monolayer single crystal graphene can buffer amorphous substrates for growing epitaxial films, and hence hints an opportunity for developing advanced thin film devices using graphene as a template.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Nontrivial strength of van der Waals epitaxial interaction in soft perovskites

The van der Waals (vdW) bond is traditionally believed to be orders of magnitude lower than the typical chemical bond (i.e., ionic, metallic, or covalent), and hence the effects caused by a vdW interface are thought to be trivial. In this work, by investigating the vdW epitaxial growth of a mechanically soft perovskite on the vdW substrate, we obtained the solid proof of strong non-negligible vdW interaction. The experimental results illustrate the formation of cracks and holes for the relaxation of the vdW strain as well as a lattice-constant-dependent epitaxial angle evolution and a pronounced band-structure change. The first-principles calculations indicate that the contribution of the vdW interaction energy at the epitaxial interface reaches up to more than a quarter of the overall interaction energy far exceeding the traditionally recognized vdW bonding strength. Both the experimental and the theoretical work show that given the appropriate material system, the vdW interaction could be strong enough to significantly manipulate material properties.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Photon Transport in One-Dimensional Incommensurately Epitaxial CsPbX 3 Arrays

One-dimensional nanoscale epitaxial arrays serve as a great model in studying fundamental physics and for emerging applications. With an increasing focus laid on the Cs-based inorganic halide perovskite out of its outstanding material stability, we have applied vapor phase epitaxy to grow well aligned horizontal CsPbX 3 (X: Cl, Br, or I or their mixed) nanowire arrays in large scale on mica substrate. The as-grown nanowire features a triangular prism morphology with typical length ranging from a few tens of micrometers to a few millimeters. Structural analysis reveals that the wire arrays follow the symmetry of mica substrate through incommensurate epitaxy, paving a way for a universally applicable method to grow a broad family of halide perovskite materials. We have studied the unique photon transport in the one-dimensional structure in the all-inorganic Cs-based perovskite wires via temperature dependent and spatially resolved photoluminescence. Furthermore, epitaxy of well oriented wire arrays in halide perovskite would be a promising direction for enabling the circuit-level applications of halide perovskite in high-performance electro-optics and optoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2016

van der Waals epitaxy of CdTe thin film on graphene

van der Waals epitaxy (vdWE) facilitates the epitaxial growth of materials having a large lattice mismatch with the substrate. Although vdWE of two-dimensional (2D) materials on 2D materials have been extensively studied, the vdWE for three-dimensional (3D) materials on 2D substrates remains a challenge. It is perceived that a 2D substrate passes little information to dictate the 3D growth. Here in this article, we demonstrated the vdWE growth of the CdTe(111) thin film on a graphene buffered SiO 2 /Si substrate using metalorganic chemical vapor deposition technique, despite a 46% large lattice mismatch between CdTe and graphene and a symmetry change from cubic to hexagonal. Our CdTe films produce a very narrow X-ray rocking curve, and the X-ray pole figure analysis showed 12 CdTe (111) peaks at a chi angle of 70°. This was attributed to two sets of parallel epitaxy of CdTe on graphene with a 30° relative orientation giving rise to a 12-fold symmetry in the pole figure. First-principles calculations reveal that, despite the relatively small energy differences, the graphene buffer layer does pass epitaxial information to CdTe as the parallel epitaxy, obtained in the experiment, is energetically favored. The work paves a way for the growth of high quality CdTe film on a large area as well as on the amorphous substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Heteroepitaxy of large grain Ge film on cube-textured Ni(001) foils through CaF 2 buffer layer

Cube-textured Ni(001) foils have been considered as a viable alternative substrate to grow high quality functional films for large area optoelectronic devices. Here in this work, we report the heteroepitaxial growth of CaF 2 (001) films on cube-textured Ni(001) foils at 350-600 degrees C with in-plane orientation of CaF 2 [110]//Ni[100] and CaF 2 [$\bar{1}$10]//Ni[010] with 45 degrees rotation respect to the Ni(001) substrate. Unlike CaF2(111)/Ni(001) films where there exist four independent rotational domains with rotational domain boundaries, CaF 2 (001)/Ni(001) contains no rotational domains or rotational domain boundaries. This makes CaF 2 (001)/Ni(001) films better candidates as templates for the growth of high quality functional semiconductors. Lastly, we also demonstrate that Ge(001) film with no rotational domains and with a grain size of ~ 50 μm similar to that of the Ni substrate can be grown on the CaF 2 (001) buffered Ni substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Evidence of enhanced electron-phonon coupling in ultrathin epitaxial copper films

Electron phonon (el-ph) coupling is a fundamental quantity that controls the electron transport through a conductor. We experimentally determined the el-ph coupling strength of epitaxial copper (Cu) films ranging from 5 to 1000 nm thick using both ultra-fast, optical pump-probe reflectivity and temperature-dependent resistivity measurements. An enhancement of the el-ph coupling strength was observed when the thickness of the films was reduced to below 50 nm. We suggest that this unexpected enhancement of the el-ph coupling strength is partially responsible for the observed increase of resistivity in the films below 50 nm thick.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗