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Wang, G. Y.

Publications and source records attributed to Wang, G. Y..

9 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Transformation-induced plasticity in bulk metallic glass composites evidenced by in-situ neutron diffraction

Transformation-induced plasticity in a strain-softening amorphous matrix consisting of austenite B2 phase was studied by in-situ neutron diffraction, coupled with molecular dynamic simulation. It was found that the martensitic transformation from B2 to B19' upon loading commenced at the macroscopic yielding which increased with the decrease of the fraction of the parent austenite B2 phase, and the threshold lattice strain for the martensitic transformation is almost the same in different samples, suggesting that the martensitic transformation in the current glassy matrix is strain-controlled. Analysis of load partition and strain accommodation unveiled that B2 has elastic anisotropy, and the desirable elastic match between B2 and the amorphous matrix ensures a good cooperative deformation. Additionally, molecular dynamic simulation revealed that atoms at the interface between B2 and the amorphous matrix deviated from the standard B2 lattices and acted as nucleation site for the martensitic transformation, eventually giving rise to the strain-controlled martensitic transformation. Our findings provide new insights into the mechanism of phase transformation-mediated plasticity at the microscopic level, and have useful implications for developing novel, high-performance bulk metallic glass composites.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Manipulation of orbital occupancy by ferroelectric polarization in LaNiO{sub 3}/BaTiO{sub 3−δ} heterostructures

We investigate the control of orbital occupancy by ferroelectric polarization in LaNiO{sub 3}/BaTiO{sub 3−δ} heterostructures. It is achieved by the ferroelectric displacement of Ti ions polarized downward (upward) to form (break) Ni–O–Ti covalent bonding at the interface, accompanied by charge transfer between them and the modulation of the conductivity of ultrathin LaNiO{sub 3}. This electrically switchable and bi-direction control of orbital polarization in LaNiO{sub 3} is up to 25%, different from the manipulation by epitaxial strain or quantum confinement. Our finding opens a window for electrical control of orbital polarization at an oxide interface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Electrical control of Co/Ni magnetism adjacent to gate oxides with low oxygen ion mobility

We investigate the electrical manipulation of Co/Ni magnetization through a combination of ionic liquid and oxide gating, where HfO{sub 2} with a low O{sup 2−} ion mobility is employed. A limited oxidation-reduction process at the metal/HfO{sub 2} interface can be induced by large electric field, which can greatly affect the saturated magnetization and Curie temperature of Co/Ni bilayer. Besides the oxidation/reduction process, first-principles calculations show that the variation of d electrons is also responsible for the magnetization variation. Our work discloses the role of gate oxides with a relatively low O{sup 2−} ion mobility in electrical control of magnetism, and might pave the way for the magneto-ionic memory with low power consumption and high endurance performance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Resistive switching and conductance quantization in Ag/SiO{sub 2}/indium tin oxide resistive memories

The Ag/SiO{sub 2}/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of ∼10{sup 2}, satisfactory endurance of >500 cycles, good retention property of >2000 s, and fast operation speed of <100 ns, thus being a type of promising resistive memory. Under slow voltage sweep measurements, conductance plateaus with a conductance value of integer or half-integer multiples of single atomic point contact have been observed, which agree well with the physical phenomenon of conductance quantization. More importantly, the Ag/SiO{sub 2}/ITO devices exhibit more distinct quantized conductance plateaus under pulse measurements, thereby showing the potential for realizing ultra-high storage density.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Insensitivity of tunneling anisotropic magnetoresistance to non-magnetic electrodes

Ferromagnetic electrodes play a crucial role in magnetoresistance effect and spin injection, whereas the essential features of non-magnetic metal electrodes in spintronics are commonly ignored except for their electrical conductivity. Here, we verify that the room-temperature tunneling anisotropic magnetoresistance (TAMR) behavior in antiferromagnet-based [Pt/Co]/IrMn/AlO{sub x}/metal (metal = Pt, Au, Cu, Al) junctions is insensitive to the top metal electrodes. Similar out-of-plane signals are detected for different electrodes, in contrast to the varied shapes of in-plane TAMR curves which are most likely attributed to the differences in the multidomain structure of the magnetic electrode. This would add a different dimension to spintronics.

36 MATERIALS SCIENCE↗
NASA NTRS1974

A synchronous binary array divider

An asynchronous binary divider formed of an array of identical logic cells is described. Each cell includes a single bit binary subtractor and a selection gate. The array is connected to divisor, dividend, quotient and remainder registers. Divisor and dividend numbers are read into the divisor and dividend registers, respectively. The array of identical logic cells performs the division in parallel asynchronously and places the results of the division in the quotient and remainder registers for subsequent readout.

Wang, G. Y.↗
NASA NTRS1970

Array multiplier

Digital array multiplier consisting of any number of identical digital adder cells in a repetitive planar configuration functions as a modular multiplier for use in computer applications of airborne vehicles. The modular multiplier utilizes large scale integration and metal oxide semiconductors.

Wang, G. Y.↗