Wallett, T. M. | Engineering Papers

NASA NTRS1987

Submillimeter backward wave oscillators

A NASA program for the development of backward wave oscillators (BWOs) for the 500-2000 GHz frequency range is discussed. The BWO operation is based on a periodic etched slow wave structure which supports the induced traveling electromagnetic wave. The present submillimeter wave BWOs will employ a variation of the folded wave guide, the interdigital line. The use of a noncompressed electron beam results in less thermal loading of the circuit, smaller magnetic focusing fields, and higher current density of the circuit interaction region. The diamond etching procedure is described. Aluminum will be used for the metallization of the diamonds.

Dayton, J. A.↗

NASA NTRS1986

Dry etching of beta-SiC in CF4 and CF4 + O2 mixtures

Dry etching of cubic (100) beta-SiC single-crystal thin films produced via chemical-vapor deposition (CVD) has been performed in CF4 and CF4 + O2 mixtures, in both the reactive-ion-etching (RIE) and plasma-etching modes. The latter process yielded measurable etch rates, but produced a dark surface layer which appears, from the results of secondary-ion mass spectrometry, to be residual SiC. The RIE samples had no residual layer, but Auger electron spectroscopy did reveal a C-rich surface. The optimal RIE conditions were obtained with 10 sccm of pure CF4 at 40 mtorr and a power density of 0.548 W/sq cm, giving an etch rate of 23.3 nm/min. Neither the increase of temperature between 293 and 573 K, nor the incremental addition of O2 to CF4 to 50 percent, produced any strong effect on the etch rates of SiC during RIE. Pictorial evidence of fine line structures produced by RIE of beta-SiC films are also presented.

Palmour, J. W.↗