Engineering topics

Waller, Laura

Publications and source records attributed to Waller, Laura.

3 records

DOE OSTI2024

Towards Full Field-of-View Fourier Ptychography for Extreme Ultraviolet Microscope

We evaluate various Fourier ptychographic microscopy (FPM) reconstruction algorithms using both simulated and experimental data acquired from an Extreme Ultraviolet (EUV, 13.5 nm wavelength) microscope. We specifically focus on the algorithms' ability to robustly address field-dependent aberrations, which enables increased spatial resolution and quantitative phase imaging across an expanded field of view. We systematically compare the algorithms' performance under aberrations for a single zoneplate imaging system, utilizing Fourier Ring Correlation (FRC) as a systematic metric for assessing reconstruction quality. Furthermore, we explore the impact of systematic errors on the reconstruction of experimental data, aiming to increase the effective field of view by 25-fold, from the nominal 5x5 um2 diffraction-limited area. Additionally, our evaluation incorporates innovative FPM-adjacent methodologies, including the Angular Ptychographic Imaging with Closed-form method (APIC), for reconstructing EUV images.

Gu, Chaoying↗

DOE OSTI2022

Ion complexation waves emerge at the curved interfaces of layered minerals

Abstract Visualizing hydrated interfaces is of widespread interest across the physical sciences and is a particularly acute need for layered minerals, whose properties are governed by the structure of the electric double layer (EDL) where mineral and solution meet. Here, we show that cryo electron microscopy and tomography enable direct imaging of the EDL at montmorillonite interfaces in monovalent electrolytes with ångstrom resolution over micron length scales. A learning-based multiple-scattering reconstruction method for cryo electron tomography reveals ions bound asymmetrically on opposite sides of curved, exfoliated layers. We observe conserved ion-density asymmetry across stacks of interacting layers in cryo electron microscopy that is associated with configurations of inner- and outer-sphere ion-water-mineral complexes that we term complexation waves. Coherent X-ray scattering confirms that complexation waves propagate at room-temperature via a competition between ion dehydration and charge interactions that are coupled across opposing sides of a layer, driving dynamic transitions between stacked and aggregated states via layer exfoliation.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Picometer sensitivity metrology for EUV absorber phase

With growing interest in EUV attenuated phase-shift masks due to their superior image quality for applications such as dense contact and pillar arrays, it is becoming critical to model, measure, and monitor the intensity and relative phase of multilayer and absorber reflections. We present a solution based on physical modeling of reflectometry data, which can achieve single picometer phase precision and sensitivity to changes in average film thickness below one atomic monolayer. We measure absorber and multilayer reflectivity to determine thin-film parameters with a multidimensional optimization and then acquire a new measurement of either multilayer or absorber to determine perturbations in surface contamination thickness. While it is difficult to assess the accuracy of the first step, the simplicity of the second step allows us to characterize our sensitivity to changes in contamination thickness. Thus, we apply this analysis using an initial set of measurements and repeated measurements after a period of storage. For the multilayer, the total contamination growth was 1068 pm, which occurred almost exclusively during storage (1085 pm) and decreased very slightly during repeated measurements (-17 pm). For the absorber, the behavior was quite different, with a total growth of 126 pm, which occurred much less during storage (28 pm) and primarily during repeated measurements (98 pm). Ultimately, the change in relative phase (absorber minus multilayer) was -0.86 deg for the multilayer and -1.12 deg for the absorber. We estimate the precision of the surface contamination measurement to be 3σ < 6 pm for measuring thickness and 3σ < 0.2 deg for measuring phase.

36 MATERIALS SCIENCE↗