Engineering topics

Walker, Trumann

Publications and source records attributed to Walker, Trumann.

9 records

DOE OSTI2023

Distribution of Copper States, Phases, and Defects across the Depth of a Cu-Doped CdTe Solar Cell

Copper has been used as a p-type dopant in cadmium telluride (CdTe) for decades. However, the density of Cu atoms in the finished device is much higher than that of holes, which means that most Cu atoms are not activated as acceptors during incorporation. Furthermore, studies have demonstrated that the distribution of copper (Cu) atoms across the device is highly inhomogeneous, with reports citing Cu substitution on Cd sites and segregation to grain boundaries. Fast diffusion along these boundaries and Cu accumulation at the CdTe/CdS interface have also been observed and validated computationally. These levels of inhomogeneity make it difficult to accurately characterize and correlate the performance with the nature of the Cu atomic species present. To address this challenge, we utilize X-ray microscopy and, specifically, nanoscale fluorescence-mode X-ray absorption near-edge structure to resolve the atomic Cu environment throughout the depth of the CdTe layer. Our results suggest that the majority of Cu atoms are in the form of Cu x Te phases (or similar local environments) near the ZnTe|CdTe interface, Cu x O phases in the CdTe absorber, and present in various oxidation states, including Cu 1+ and Cu 2+ , near the CdS/CdTe junction. Here this work also provides experimental evidence for the first time of the presence of CuS around the ZnTe|CdTe interface and the hypothesized Cu Cd -Cl i complex in the CdTe absorber.

14 SOLAR ENERGY↗

DOE OSTI2022

Quantitative analysis of Cu XANES spectra using linear combination fitting of binary mixtures simulated by FEFF9

We report x-ray absorption near edge structure (XANES) is a powerful tool to probe the fingerprint of local structures, and when coupled with X-ray microscopy, the small spot size enables one to probe very specific regions of interest in a device or material, e.g. interfaces/bulk, different grains, good/bad electrical areas. In this work, we investigate the use of linear combination fitting (LCF) of XANES spectra for the particular case of Cu doping in CdTe. We show that the experimental data seem to be accurately represented by standards of Cu 2 Te and its substoichiometric counterpart, Cu 1.43 Te. We use Cu in CdTe as a case study to evaluate the accuracy of linear combination fitting using simulated standards, given that experimental standards for certain phases (e.g. Cu 1.43 Te) or defect structures (e.g. vacancies) cannot be readily obtained. We discuss how spectral features of the FEFF9-simulated standards, fitting ranges, and noise levels all dictate the accuracy of this type of analysis. We show that the greater the spectral difference between the two standards, the better the LCF is able to differentiate between the two structures and to tolerate experimental noise. Finally, we estimate the error of the fitted weights for different spectral features and noise levels and propose a framework to study local structures semi-quantitatively by using binary mixtures of FEFF9-simulated standards.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Development of an operando characterization stage for multi-modal synchrotron x-ray experiments

It is widely accepted that micro- and nanoscale inhomogeneities govern the performance of many thin-film solar cell absorbers. These inhomogeneities yield material properties (e.g., composition, structure, and charge collection) that are challenging to correlate across length scales and measurement modalities. The challenge is compounded if a correlation is sought during device operation or in conditions that mimic aging under particular stressors (e.g., heat and electrical bias). Correlative approaches, particularly those based on synchrotron x-ray sources, are powerful since they can access several material properties in different modes (e.g., fluorescence, diffraction, and absorption) with minimal sample preparation. Small-scale laboratory x-ray instruments have begun to offer multi-modality but are typically limited by low x-ray photon flux, low spatial resolution, or specific sample sizes. To overcome these limitations, a characterization stage was developed to enable multi-scale, multi-modal operando measurements of industrially relevant photovoltaic devices. The stage offers compatibility across synchrotron x-ray facilities, enabling correlation between nanoscale x-ray fluorescence microscopy, microscale x-ray diffraction microscopy, and x-ray beam induced current microscopy, among others. Furthermore, the stage can accommodate device sizes up to 25 × 25 mm 2 , offering access to multiple regions of interest and increasing the statistical significance of correlated properties. The stage materials can sustain humid and non-oxidizing atmospheres, and temperature ranges encountered by photovoltaic devices in operational environments (e.g., from 25 to 100 °C). As a case study, we discuss the functionality of the stage by studying Se-alloyed CdTe photovoltaic devices aged in the stage between 25 and 100 °C.

14 SOLAR ENERGY↗

DOE OSTI2021

The nanoscale distribution of copper and its influence on charge collection in CdTe solar cells

For decades, Cu has been the primary dopant in CdTe photovoltaic absorbers. Typically, Cu acceptor concentrations in these devices are on the order of 1 1014 cm-3, which has made it notoriously difficult to directly correlate nanoscale Cu distributions to the local charge transport properties of these devices. To measure and correlate these properties, measurement techniques require high sensitivity to elemental concentration, large penetration depth, and operando compatibility. Techniques such as secondary-ion mass spectroscopy and X-ray energy dispersive spectroscopy are widely adopted to measure Cu concentrations, but they are limited by penetration depth, sensitivity, or spatial resolution. Additionally, they lack the operando capabilities required to correlate one-to-one Cu concentrations to electrical performance. In this work, correlative X-ray microscopy is used to investigate the spatial distribution of Cu and its impact on charge collection through the depth and breadth of CdTe photovoltaic devices. Plan-view, nanoscale X-ray fluorescence maps clearly demonstrate the spatial segregation of copper around regions thought to be CdTe grain boundaries. Complementary cross-section imaging unveils the transition of the maximum charge-collection efficiency from the ZnTe-CdTe interface to the CdS-CdTe interface as a function of Cu incorporation. The copper concentration through the depth of the CdTe layer is characterized by slow and fast diffusion components, and cross-section charge-transport modeling shows that the experimentally obtained charge collection can be explained by the modeled acceptor distribution through the depth of the CdTe layer.

14 SOLAR ENERGY↗

DOE OSTI2021

Unraveling Cu Chemical Signature in CdTe by Spectral Fluorescence Mapping

X-ray absorption spectroscopy (XAS) has been shown to be a powerful tool to unravel the chemical environment of a given atom within a matrix. When used in correlative X-ray microscopy approaches, XAS allows one to probe with nanoscale precision regions of particular interest in an absorber. Herein, we use X-ray absorption near edge structure (XANES) to evaluate the chemical environment of Cu atoms within a CdTe solar cell. The reconstruction of XANES spectra from XRF maps have unfolded 2D maps of Cu chemical structures. In this work, we found that most Cu atoms exist in Cu 2 Te and Cu 1.4 Te phase. Moreover, we found traces of CuTe, Cu 2 O, CuO, Cu 2 S, CuS, and metallic Cu phase. Investigating Cu chemical structures at different performing areas, we found no observable correlation between Cu chemical structures and electrical performance. This approach allows tracking of Cu chemical structures along with electrical performance and elemental distribution simultaneously, with high spatial resolution in a statistically practical way.

CdTe↗

DOE OSTI2021

Copper Defects and Charge Collection in Cadmium Telluride Photovoltaic Devices

In CdTe photovoltaic devices, the CdTe layer must be doped with Cu to reduce its resistivity, increase carrier lifetime, and improve hole transport. However, the Cu concentration is typically very low around the interfaces and within the CdTe layer, making it difficult to determine the influence Cu has on charge transport at the nanoscale; Cu concentrations are difficult to detect due to low ionization probability of Cu atoms [1]. Here, we use synchrotron X-ray microscopy to probe the nanoscale distribution of Cu and correlate it to local charge collection in CdTe photovoltaic devices. We demonstrate Cu segregation around grain boundaries, and, using cross-section charge collection measurements and transport modelling, show recombination center concentration in the CdTe layer dictates the interface at which charge collection occurs. The work gives insights on how Cu distributes in CdTe photovoltaic systems, and an understanding of how these distributions affect charge transport.

Walker, Trumann↗

DOE OSTI2021

Role of Cation Ordering on Device Performance in (Ag,Cu)InSe 2 Solar Cells with KF Post-Deposition Treatment

CuInSe 2 (CIS) has been proposed as an attractive bottom cell candidate in tandem solar cells. However, to justify the coupling with high-performance top cells (e.g., perovskites, GaAs), significant work on improving the efficiency is required. To this extent, several authors have demonstrated the benefits of alkali post-deposition treatments (PDT) to increase device open-circuit voltage (V oc ) in CIS and how Ag alloying - (Ag,Cu)InSe 2 (ACIS) - reduces defect density and enhances current collection in devices. Herein, we present a detailed study of the role that KF-PDT plays on CIS and ACIS absorber composition and structure, and propose an explanation for the decreased V oc observed when silver and potassium coexist in the system (ACIS + KF). Through a suite of synchrotron-based techniques, we investigate the nanoscale chemical distribution of the films and the formation of secondary phases. Through photoluminescence imaging, we observed a high degree of passivation with the addition of KF, and synchrotron-based X-ray diffraction confirmed the absence of a KInSe 2 surface layer usually considered to be a passivating agent. Raman spectroscopy and synchrotron X-ray fluorescence show the increased presence of Cu- and Se-poor clusters in ACIS + KF, which are correlated to significantly reduced X-ray beam-induced current (XBIC). An increase in the intensity of the E/B 2 stretching mode of CIS is attributed to cation ordering near the junction and is found to track inversely to bulk V oc measurements. The cation ordering is hypothesized to arise from the formation and redistribution of defects that normally occur near the surfaces of CIS as a consequence of its polar character. Here, these defects compensate each other, and the overall inhomogeneity of the charge distribution generates electrostatic potential fluctuations that greatly increase the saturation current and hence reduce the open-circuit voltage of the device.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Cu-Local Structures and Their Relation with Nanoscale Electrical Performance in CdTe

For decades, copper has been introduced in CdTe devices to improve overall performance (open circuit voltage, fill factor, and series resistance). While multiple articles have reported on Cu-based defects, very little is known about how the local structure around the copper atom affects electrical performance. Using X-ray Absorption Near Edge Structure (XANES) coupled with X-ray microscopy we investigate good and poor performing region in Cu-doped CdTe devices. Our XANES coupled with theoretical standards by FEFF9 suggest that CU 2 Te phase and Cu Cd may be responsible for the high electrical performance of the regions under study. This correlation of structure-performance at the nanoscale offers a unique framework to understand and tune processes with deep implications to the overall electrical performance of the solar cell.

CdTe↗

DOE OSTI2021

Mapping Current Collection in Cross Section: The Case of Copper-Doped CdTe Solar Cells

For decades, copper has been used to improve the performance of cadmium telluride thin film solar cells. However, it has also been shown to be the main cause of metastability in CdTe. Recently a low activation energy has been reported for the thermal diffusion of Cu in CdTe explaining the ease of motion that it has under moderate temperatures. The community consensus is that copper segregates to the absorber grain boundaries, where it's either beneficial or detrimental to device performance depending on its concentration. Using nanoscale X-ray micrsocopy and a two-dimensional drift-diffusion model we present a preliminary correlation between local copper distribution and electrical performance of a single-junction CdTe/CdS solar cell.

CdTe↗