Engineering Papers⌕ Search

Engineering topics

Wagner, A.

Publications and source records attributed to Wagner, A..

Photo-response of the $N=Z$ nucleus $^{24}$Mg

The electric E1 and magnetic M1 dipole responses of the N = Z nucleus 24 Mg were investigated in an inelastic photon scattering experiment. The 13.0 MeV electrons, which were used to produce the unpolarised bremsstrahlung in the entrance channel of the 24 Mg(γ,γ') reaction, were delivered by the ELBE accelerator of the Helmholtz-Zentrum Dresden-Rossendorf. The collimated bremsstrahlung photons excited one J π = 1 – , four J π = 1 + , and six J π = 2 + states in 24 Mg. De-excitation γ rays were detected using the four high-purity germanium detectors of the γELBE setup, which is dedicated to nuclear resonance fluorescence experiments. In the energy region up to 13.0 MeV a total B(M1)↑ = 2.7(3) $μ$$^{2}_{N}$ is observed, but this N = Z nucleus exhibits only marginal E1 strength of less than ΣB(E1)↑≤ 0.61 × 10 –3 e 2 fm 2 . The B(Π1, $1$$^{π}_{i}$ → $2$$^{+}_{1}$)/B(Π1,$1$$^{π}_{i}$ → $0$$^{+}_{gs}$) branching ratios in combination with the expected results from the Alaga rules demonstrate that K is a good approximative quantum number for 24 Mg. The use of the known ρ 2 (E0, $0$$^{+}_{2}$ → $0$$^{+}_{gs}$) strength and the measured B(M1,1 + → $0$$^{+}_{2}$)/B(M1,1 + → $0$$^{+}_{gs}$) branching ratio of the 10.712 MeV 1 + level allows, in a two-state mixing model, an extraction of the difference Δ$β$$^{2}_{2}$ between the prolate ground-state structure and shape-coexisting superdeformed structure built upon the 6432-keV $0$$^{+}_{2}$ level.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Vacancy complexes in Cd 3 As 2

Epitaxial growth of the three-dimensional topological semimetal Cd 3 As 2 on semiconductor substrates enables its use and integration in device applications. Epitaxy also provides an avenue for varying and controlling point defects through modification of the chemical potential during growth. In turn, knowledge of the point defects that are generated in Cd 3 As 2 epilayers will aid the interpretation of electron transport behavior and guide growth efforts to produce material with low defect densities. Point defects in Cd 3 As 2 epilayers grown by molecular beam epitaxy with varying As/Cd flux ratios are probed by positron annihilation spectroscopy. We find that lower As/Cd flux ratios produce higher concentrations of point defects. Remarkably, the measurements indicate that the average defect size is larger than a monovacancy. The data presented here contribute to an evolving picture of vacancy point defects in Cd 3 As 2 and can be used to direct future investigation of the defect-transport relationships in this emerging electronic material.

36 MATERIALS SCIENCE↗

In situ measurements of non-equilibrium positron state defects during He irradiation in Si

Radiation-induced property changes in materials originate from the energy transfer from an incoming particle to the existing lattice, displacing atoms. The displaced atoms can cause the formation of extended defects including dislocation loops, voids, or precipitates. The non-equilibrium defects created during damage events determine the extent of these larger defects and are a function of dose rate, material, and temperature. However, these defects are transient and can only be probed indirectly. Herein, we present direct experimental measurements and evidence of irradiated non-equilibrium vacancy formation, where in situ positron annihilation spectroscopy was used to prove the generation of non-equilibrium defects in silicon.

36 MATERIALS SCIENCE↗